ONI 120 Search Results

IRFF223

Abstract: IRFF222 IRFF220 IRFF221
Contextual Info: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m

Contextual Info: IM I I A Q se^ onI u^ m DS1920 Temperature ¡Button SPECIAL FEATURES Multidrop controller for MicroLAN Digital identification and information by momentary contact Chip-based data carrier compactly stores information Data can be accessed while affixed to object

smd marking code BS sot-23 infineon

Contextual Info: BSS 83P Infineon f*chnologj*4 Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage '/os • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS oni 2 -0.33

IRFS740

Abstract: IRFS741 uA 741 NC K 741 MOSFET
Contextual Info: N-CHANNEL POWER MOSFETS IRFS740/741 FEATURES • Lower R ds<oni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended sale operating area • Improved high temperature reliability

Contextual Info: 2SK3437 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- MO S V 2SK3 4 3 7 TENTATIVE SWITCHING REGULATOR APPLICATIONS Unit in mm •Low Drain - Source ON Resistance : R D S {ONi=0*74Q(Typ.) •High Forward Transfer Admittance : IY fs |= 4 . 5 S(Typ.)

Contextual Info: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control

Contextual Info: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a

Contextual Info: EL5197C SÛlglC 200MHz FiXCd GdÌfl AtttpHfißT HIGH PERFORMANCE ANALOG INTEGRATED CIRCUÌTS Features General Description • Gain selectable + 1,-1 , +2 The EL5197C is a fixed gain amplifier with a bandwidth of 200MHz, making these amplifiers ideal for today’s high speed video and m oni­

5-6105F

Contextual Info: mi cr oel ect r oni cs group Advance Data Sheet February 1998 Lucent Technologies Bell Labs Innovations Ambassador T8100 H.100/H.Ì10 Interface andTime-Slot Interchanger 1 Product Overview Programmable switching between local time-slots and H.100 bus, up to 256 connections

1207A

Abstract: lcd 3901
Contextual Info: A ugust 1996 t o r LM1205A/LM1207A 130 MHz/85 MHz RGB Video Amplifier System with Blanking The LM 1205A/LM 1207A is a very high frequency video am ­ plifier system intended fo r use in high resolution RGB m oni­ tor applications. In addition to the three m atched video am ­

diode smd ED 84

Abstract: smd transistor NG
Contextual Info: FSYC9260D, FSYC9260R Semiconductor August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 2 8 A , -200V , rQg ONi = 0.130J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose

hv9100

Contextual Info: HV9100 HV9101 HV9102 HV9103 fàk Super te x inc. High-Voltage Switchmode Controllers with MOSFET Ordering Information Min +V„ Max Feedback Voltage MOSFET Switch Package Options Max Duty Cycle b v d8S ^OS ONI 14 Pin Plastic DIP 14 Pin Ceramic DIP 20 Pin Plastic PLCC

Contextual Info: r All rights strictly reserved. Reproduction or issue to third parties in any form whatever is not permitted without written outhority from the proprietor. Property of B E R G ELECTRONICS BERG IC cS BLE CTO ONI Tous droits strictement reserves. Propriété d e © B E R G ELECTRONICS.

Contextual Info: FSS913AOD, FSS913AOR Semiconductor August 1998 10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 10A , -100V , rQg ONi = 0.280J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose - File Number 4451.2

uc 3882

Abstract: KA 3882 ic 3882
Contextual Info: UCC2882 _ U IM IT R O D E UCC3882 PRELIMINARY Average Current Mode Synchronous Controller With 5-Bit DAC FEATURES DESCRIPTION • T he U C C 3882 com bines high precision reference and voltage m oni­ toring circu itry w ith average cu rre n t m ode PW M synchronous rectifi­

Contextual Info: FUJITSU MI C ROE L E C T R ONI C S 23E D 374T7t i S Q012Ö45 3 ASSP • Data Exchange C O D E C IC MB6020A Series Device Number Function Law MB6021A M-law MB6022A A-law Sync/Async Analog Outut (k fì) Supply Voltage (V) Package Alternate Source HD44234 ±5V±5%

TFC 718 S

Abstract: tfc 718 RQS series
Contextual Info: Data Sheet April 1997 mi cr oe l e c t r oni c s group Lucent Technologies Bell Labs Innovations T7121 HDLC Interface for ISDN HIFI-64 Features Description • Low-cost device for B-channel (64 kbits/s) or D-channel (16 kbits/s) data transport. The T7121 HDLC Interface for ISDN (HIFI-64) con­

2N3751

Abstract: 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929
Contextual Info: A P I ELE C TR ON IC S INC 2b 00^3592 A P I ELECTR ONI CS ¡>T| 00435^2 DQGD223 1 | INC 26C 00223 D - f ’-3 3 -& I COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929 2N3996 JAN

fast switching pnp transistor 3A 60V

Abstract: 2N5872 SOLITRON DEVICES
Contextual Info: _ 8 3 6 8 6 0 2 _SOI TT r oni n r v / m r g SOLITRON DEVICES INC tmh TS 95D 02889 DE-J ßBbäbOS ODDEflflT I ÄTTÄ[L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 67 CONTACT METALLIZATION

MC14066

Abstract: MC14016 74hc150 MC145042 hc4016 MC14066 applications cmos 4016 74HC4066 application note Mc14066 MOtorola equivalent mc14066
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Analog Sw itch/ M ultiplexer/D em ultiplexer M C 54/74H C 4066 High-Performance Silicon-Gate CMOS J SUFFIX CERAMIC PACKAGE CASE 632-08 The M C 54/74HC4066 utilizes silicon-gate CMOS technology to achieve fast propagation delays, low ONI resistances, and low O F F-channel leakage

Contextual Info: FSL23A0D, FSL23A0R D ata S h eet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999 F ile N u m b er 4476.2 Features • 6A , 2 0 0 V , rQg ONi = 0.350J2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris Corporation,

Contextual Info: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1999 File Number 4250.4 Features • 7 0 A , 60V, rQg ONi = 0 .0 1 2£2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a

Contextual Info: G E C - NARC ONI MTLS LTD ES D 37L. Û501 DDG0G13 7 -6 L PLESSEY T-7</~i5 -o / Three Five Product Information GaAs M M IC Broadband Amplifier P35-4130 : 2 -1 2 GHz Features • Broadband, cascadable gain block. • Usable frequency range 1-14 GHz. • AGC control with gate bias. • ;

mb87017

Abstract: mb4514a mb4514b MB87017A MT8870 MB87084 FPT-48P-M02 DIP-22P-M03 MB4507A MB4514
Contextual Info: F U J I T S U MI C ROE L E C T R ONI C S 0101010100000202020201000001 E3E D • 3 7 4 e17tjS OQ1SÔ41 1 T-ys-ö/ ASSP D TM F Dialer Device Number MB4507A Function Oscillator Frequency MHz Supply Current (mA) Package Alternate Source 3.58 20 to 105 DIP-22P-M03