OOWE Search Results

DC MOTOR SPEED position CONtrol pwm pic

Abstract: pic torque DC MOTOR SPEED CONtrol pwm pic
Contextual Info: Introduction '-tecent successes in the continuing development of semiconductor technology make it possible to employ oower integrated circuits PICs in applications which previously had been the preserve of mechanical swit­ ches and electromechanical relays.

6BF5

Abstract: 10000 watts amplifier circuit diagram 500 watts audio amplifier diagram POWER AMPLIFIER CIRCUIT DIAGRAM 10000 100 watts amplifier circuit diagram 5 volts audio amplifier 700 watts power amplifier circuit diagram tube audio amplifier design general electric
Contextual Info: 6BF5 PAGE I 6BF5 Description and Rating BEAM POWER AMPLIFIER t ill WÊÉ NflBM• H I ■ ■ I GENERAL DESCRIPTION Principal Application: Tue 5BF5 oower a m p l i f i e r des i gned is a m i n i a t u r e f o r use beam- delivering in t ne a u d i o out put

qml-38535

Contextual Info: in AM D REVISIONS DESCRIPTION DATE m-MO-QA APPROVED REV SH EE T SH EET R E V STATUS O F SH EETS 22 23 24 25 REV 10 SH EE T 16 12 19 17 20 21 PMIC N/A D EFEN SE ELECTR O NICS SU P P LY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE

Contextual Info: Q l ILC DATA DEVICE BUS-65153 CORPORATION _ _ 0 9 19» MIL-STD-1553B, NOTICE 2 & MIL-STD-1760A STIC" - SMALL TERMINAL INTERFACE CIRCUIT FEA TU R ES DESCRIPTION The BUS-65153 is a complete, dual redundant MIL-STD-1553B Remote Terminal. Packaged in a 1.90 x 1.0x0.2",

Contextual Info: ICS9147-29 Integrated rip m iif Circuit Systems, Inc. •d Advanced Information Frequency Generator and Integrated Buffers General Description Features Twelve selectable CPU clocks operate up to 83.3 MHz Maximum CPU jitterof ±200ps Six BUS clocks support sync or async bus operation

SDED7

Abstract: 30535 00414 IC 7476 function
Contextual Info: T 178 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert

alps ALP

Contextual Info: T 670 F Elektrische Eigenschaften - Electrical properties Maximum rated values t , = -40°C t ,max VDRMI t, =-40oc.t, VDS, = VDRM t , = + 25°C t ,max VWM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung

M5297P

Abstract: 251C
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

k54c

Abstract: FD19 TL16PNP550A
Contextual Info: TL16PNP550A ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH PLUG AND PLAY PnP AND AUTO-FLOW CONTROL SLLS190A- MARCH 1995 -REVISED MAY 1995 PnP Card Auto-Conflguratlon Sequence Compliant External Pin-to-Bypass PnP Auto-Conflguratlon Sequence In UART Bypass Mode, the Stand Alone

LA4500

Abstract: la4505
Contextual Info: SANYO S E M IC O N D U C T O R CORP L .3 E » • 7 cn 7 D 7 b 0012057 b l3 « T S A J x - T T b z i - ^ , =5 ì w m 2 .:ì v * b A F n rD - j ,y y S uita ble N e w P ro d u c t : M o s t S u ita b le Supply voltage Range V) ftecomnended Type No Supply \Zoltago*Cv)

ZSCQ-2-50

Abstract: M22-T
Contextual Info: P ower S putters/ C soa ombiners 2 Way-0° Resistive dc to 4200 mhz ZFRSC ISOLATION FREQ. RANGE MHz MODEL NO. W , INSERTION LOSS, dB Above 6dB d& PRSC PHASE UNBALANCE Degrees L M U AMPLITUDE UNBALANCE dB L M U L typ. typ. Typ. Typ. Max. 7.0 7.0 7.0 0.1 0 .’

2X36

Contextual Info: NOT DO M ETRIÇ SCALE TMJRO A N 9LC PR O JE C T IO N DIMENSIONS IN mm NOTES, A TO DETERMINEDIMENSIONS TAKE 2xN = NR. OF POS. EXAMPLE. 2x10 POS. N x 2,54 =25.4 mm. FOR ORDERNR. USE SASIC NR. + NR. OF POS. FOR EXAMPLE. 2x2POS.= 215307-2 swoffresrv c t s i w o

Contextual Info: One. «_/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFZ10 HEXFET* Power MOSFET Dynamic dv.'dt Rating 175-C Operating Ternp«ralijr« Fasl Switching Fn=,e rl Pa'alleing Simple Drive Requirements

DRAMs

Abstract: 4Mx1
Contextual Info: 16M - Bit UHÄM s iim i- i l U M A » i'll a m ”f m v /i V a ar — 2k versus 4k - Refresh m i r i i ir i m i \ / s i mr i i m u i n vi M M iiVr ilu M iv A nm i i iriu b i i rin v rm i ic i -G y IC M C h iC '• 1_ E T I L I l kJ _ TbM ÜHAM This information note is in-tended to provide technical information on the SIEM EN S 4Mx4

E3M-VG26

Abstract: FD-422 E3M-VG16 JUT 6012 E39-L132 E3M-VG11 E3M-VG21 XS2F-D421-D80-A XS2F-D422-D80-A XS2F-D422-G80-A
Contextual Info: TIMZ: J.2:12 TO: 0113 2794449 FROM: 020 8450 8087 Omron PAGE: 002-013 310 ssi,ì omRon Color Mark Sensor E3M-V n Detects laminated or light-dispersing objects in stable operation without being influenced by mirror ’'ejection. ~ Double indication of the detection level and

BUK465-60A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

100C

Abstract: BUK564-200A
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

BUK463-60A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

BUK566-60A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK566-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

BUK466-60A

Abstract: DC52A
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK466-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

1N4C01

Abstract: IN551 FAG5 IN551 regulator
Contextual Info: > i/ iy j x i> i/ i F ix e d O u tp u t 10 W C M O S S te p -U p S w itc h in g R e g u la to rs Toe MAX641/MAX64P/MAX643 step-up s w tc h irg regu­ lators arc designed for m irim u m com ponent DC-DC converter c rc u ils ir The 5mW lo 10W range ♦ Fixed +5V, +12V, +15V O utput Voltages

BUK9556-30

Abstract: T0220AB BUK955
Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

16 pin diagram of lcd display 16x2

Abstract: 8X2 LCD DISPLAY 4x2 character LCD LCD 6x2 pin diagram of 8X2 LCD DISPLAY 4x2 lcd 160 by 64 dot matrix controller 8x12 font block diagram of lcd display 16x2 16x2 LCD Panel Display
Contextual Info: OKI semiconductor MSM6240 DO T M A T R IX LCD C O N TR O LLER G EN ER A L DESCRIPTION T h e O K I M S M 6 2 4 0 G S is a CM O S Si-gate LSI t o c o n tr o l large size d o t m a tr ix L C D in characters and graphics. Three kin d s o f d isp la y m odes are p ro v id e d ; S e m i-graph ic m o d e . F u ll-g ra p h ic m o d e arid C h ara cter m ode.

rf power transistor h2

Abstract: M57774
Contextual Info: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm PIN : Pin : RF INPUT VCCI : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY @ Po : RF OUTPUT ® GND : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted