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    OP214 Search Results

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    OP214 Price and Stock

    Vishay Semiconductors TSOP2140

    SENSOR REMOTE REC 40.0KHZ 45M
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    DigiKey TSOP2140 Tube 6 1
    • 1 $0.89
    • 10 $0.744
    • 100 $0.63856
    • 1000 $0.57187
    • 10000 $0.50737
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    Power Integrations TOP214YN

    IC OFFLINE SW MULT TOP TO220-3
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    DigiKey TOP214YN Tube
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    Power Integrations TOP214YAI

    IC OFFLINE SW MULT TOP TO220-3
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    DigiKey TOP214YAI Tube
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    On-Shore Technology Inc OSTOP214200

    TERM BLOCK HDR 21POS 3.81MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey OSTOP214200 Bulk 51
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    Amphenol Anytek OP2142000000G

    TERM BLOCK HDR 21POS 3.81MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey OP2142000000G Bulk 2,000
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    RS OP2142000000G Bulk 2,000
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    Onlinecomponents.com OP2142000000G
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    Interstate Connecting Components OP2142000000G
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    OP214 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    OP214
    Philips Semiconductors NPN Silicon Planar Epitaxial Microwave Crystal Scan PDF 157.97KB 3
    OP2142000000G
    Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 21POS VERT 3.81MM Original PDF 84.25KB

    OP214 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B


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    001fc PTB23001X PTB23003X PTB23005X FO-41B PTB32001X PTB32003X PTB32005X PDF

    crystal PHILIPS

    Abstract: by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b
    Contextual Info: - 7 = -3 /-fO Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave crystal PHILIPS INTERNATIONAL FEATURES • Multiple ion Implantation for optimum concentration profile • Self-alignment process for better reproducibility


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    OP214 711062b 3-5-52/E crystal PHILIPS by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b PDF

    NE5211D

    Abstract: SA5211D Fiber-optic temperature sensor 850nm photodiode signetics rf Receiver Circuits radio av receiver schematic diagram 850nm photodiode Fiber-optic fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm fiber-optic sensor 820nm NES211
    Contextual Info: NE/SA5211 Signetics Transimpedance Amplifier 180MHz Preliminary Specification Linear Products PIN CONFIGURATIO N DESCRIPTION FEATURES The NE/SA5211 is a 28ki2 transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­


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    NE/SA5211 180MHz) NE/SA5211 28ki2 180MHz 28kS7 50Mb/s BPF31, 850nm NE5211 NE5211D SA5211D Fiber-optic temperature sensor 850nm photodiode signetics rf Receiver Circuits radio av receiver schematic diagram 850nm photodiode Fiber-optic fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm fiber-optic sensor 820nm NES211 PDF

    induction cooker fault finding diagrams

    Abstract: TC227 compressor catalogue Vernitron TRANSDUCER b2 str 1265 smps power supply circuit of tv ADC0804-1CD TC225 tesla MAa 741 SPICE model NTC Inrush Current Limiters Thermistor XR558CP
    Contextual Info: BOOK IC11 LINEAR PRODUCTS page Selection guide Functional in dex. 5 Numerical in d e x .


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    PDF

    40XA

    Abstract: NE521
    Contextual Info: NE/SA5211 Signetics Transimpedance Amplifier 180MHz Preliminary Specification Linear Products DESCRIPTION FEATURES The NE/SA5211 is a 28k£2 transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­ able for signal recovery in fiber optic


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    NE/SA5211 180MHz) NE/SA5211 180MHz 28ki2 BPF31, B50nm NE5211 E5214 AB1432. 40XA NE521 PDF

    by 028 x200

    Abstract: LTE42008R OP214 PTB23001X philips 5b
    Contextual Info: - 7^3 / - 9 NPN silicon planar epitaxial microwave crystal PHILIPS INTERNATIONAL FEATURES • Multiple ion implantation for optimum concentration profile • Self-alignment process for better reproducibility • Gold metallization for very good stability and long life


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    OP214 711002b 3-5-52/E OP214 by 028 x200 LTE42008R PTB23001X philips 5b PDF

    OP222

    Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
    Contextual Info: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B


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    PTB23001X FO-41B PTB23Ã PTB23005X PTB32001X PTB32003X OP222 FO-91 TRANSISTOR package FO-91 d 1047 transistor FO-41-B PTB42001X PDF