operational amplifier 10GHz
Abstract: No abstract text available
Text: SMT High Frequency Chip Thermistor 0805 HFT Series - Operational over 10Ghz. - Resistance value stays virtually the same from 10-15Ghz. - Very stable Temperature characteristics from -20oC to +100oC from 0 to 10Ghz. - Ideal for compensating temperature drift in high frequency amplifier applications.
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10Ghz.
10-15Ghz.
-20oC
100oC
operational amplifier 10GHz
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T105 25E3
Abstract: GAL 16 v 8 D DIP 2SK 1110 5011F analog device 260a OP260G
Text: ANALOGDEVICES fAX-ON-DEMAND HOTLINE - Page 38 -. ANALOG W DEVICES - m m Dual,High-Speed, CurrentFeedback Operational Amplifier OP-260 - PIN CONNECTIONS FEATURES Very High Slew Rate . .3dB Bandwidth Av=+10 . 550V/IlSTyp 40MHz Typ . BandwidthIndependentof Gain
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OP-260
50V/IlSTyp
40MHz
OP260ARCI883
OP260AJ'
OP260EJ
OP260FJ
OP26OGP
OP260GS1t
MIL-STD-883,
T105 25E3
GAL 16 v 8 D DIP
2SK 1110
5011F
analog device 260a
OP260G
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Untitled
Abstract: No abstract text available
Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
DS110719
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M1DGAN202
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
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RFHA1101D
10GHz
14GHz
RFHA1101D
DS110630
M1DGAN202
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Untitled
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
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RFHA1101D
10GHz
14GHz
DS110630
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Untitled
Abstract: No abstract text available
Text: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
DS110630
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RFHA
Abstract: RFHA1101
Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
RFHA1101
DS110719
RFHA
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Untitled
Abstract: No abstract text available
Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101D
10GHz
14GHz
DS110630
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Untitled
Abstract: No abstract text available
Text: SRF11B09-010-1 SRF11B09-010 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5371, REV - 8GHz to 10GHz Low Noise Amplifier Features •8 GHz to 10 GHz Frequency Range Typical Noise Figure < 1.2 dB Typical Gain 25 dB Gain Flatness < ± 1.5 dB
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SRF11B09-010-1
SRF11B09-010
10GHz
SRF11B09-10
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opa2340 application
Abstract: No abstract text available
Text: OPA OPA340 OPA2340 OPA4340 434 OPA 340 OPA 2340 OPA 434 SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● DRIVING A/D CONVERTERS ● PCMCIA CARDS ● DATA ACQUISITION ● PROCESS CONTROL
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OPA340
OPA2340
OPA4340
UAF42
SBFC001,
SLVC003A,
SBOM067,
opa2340 application
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Traveling Wave Amplifier
Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Text: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT
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85GHz
575mA/mm,
753mW/mm
18GHz.
12dBm
AV02-1684EN
Traveling Wave Amplifier
95GH
Dielectric Constant Silicon Nitride
MMIC POWER AMPLIFIER hemt
APMC2001
FMM5820X
HMC-AUH312
TGA4803
TGA4906
InGaAs hemt biasing
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VCO 10GHZ oscillator
Abstract: RF TRANSISTOR 10GHZ 10GHz oscillator application of colpitts oscillator colpitts oscillator RF TRANSISTOR 10GHZ low noise SP8852E SP8854E SP8855E DS4238
Text: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad
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SP8854E
DS4238
20MHz
to1100
VCO 10GHZ oscillator
RF TRANSISTOR 10GHZ
10GHz oscillator
application of colpitts oscillator
colpitts oscillator
RF TRANSISTOR 10GHZ low noise
SP8852E
SP8854E
SP8855E
DS4238
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SP8852E
Abstract: SP8854E SP8855E 10GHz counters
Text: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad
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SP8854E
DS4238
20MHz
to1100
SP8852E
SP8854E
SP8855E
10GHz counters
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Untitled
Abstract: No abstract text available
Text: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad
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SP8854E
DS4238
20MHz
to1100
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OP-26QF
Abstract: OP260GP op 30MHZ OP-260 OP260AJ OP260AZ OP260FJ OP260FZ OP260 FET RV power transistor X 52
Text: OP-260 PMÏ DUAL, HIGH-SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIER l’rriision Monolitlìits Int. I FEATURES .1000V/|is Typ • Very High Slew Rate • -3dB Bandwidth A ^ + 1 ).90MHz Typ • Bandwidth Independent of Gain
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10OOV/jis
90MHz
20-CONTACT
OP260AZ*
OP260AJ*
OP260ARC/883
OP260FZ
OP260FJ
OP260GP
OP26QGStt
OP-26QF
op 30MHZ
OP-260
OP260AJ
OP260AZ
OP260
FET RV power transistor X 52
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bjt ic operational amplifier
Abstract: OP260GP PMI OP AMP
Text: OP-260 PMÏ> DUAL, HIGH-SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIER FEATURES • Very High Slew R ata. 1000V/|xs Typ • -3 d B Bandw idth Av= + 1 . 90MHz Typ • B andw idth Independent o f Gain
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OP-260
90MHz
20-CONTACT
OP260AZ*
P260/J'
OP260ARC/883
OP260EZ
OP260EJ
OP260FZ
OP260FJ
bjt ic operational amplifier
OP260GP
PMI OP AMP
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transistor PNP A124 EQUIVALENT
Abstract: No abstract text available
Text: A N A LO G D E V IC E S Dual, High-Speed, Current Feedback Operational Amplifier □ 0P-260 PIN CONNECTIONS FEATURES • • • • • Very High Slew R a te . 550V/nsTyp -3dB Bandwidth A ^ + 1 0 .40MHzTyp
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0P-260
50V/nsTyp
40MHzTyp
OP26QAJ*
OP260EJ
OP260FJ
20-CONTACT
OP260ARC/883
OP260GP
OP26QGStt
transistor PNP A124 EQUIVALENT
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Untitled
Abstract: No abstract text available
Text: OP-260 PMÏ DUAL, HIGH-SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIER Precision M n n o lith ics I FEATURES • Very High S lew R a te . 10OOV/jis Typ • -3 d B Bandwidth A v= + 1 ). 90M Hz Typ
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OP-260
10OOV/jis
20-CO
P260ARC/883
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Untitled
Abstract: No abstract text available
Text: A N A LO G D E V IC E S Dual, High-Speed, Current Feedback Operational Amplifier □ 0P-260 FE A T U R E S • Very High Slew R a te . 550V/ns Typ • -3dB Bandwidth Av= + 1 0 .40M HzTyp
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0P-260
50V/ns
P260EJ
25E-3
5E-15
2E-15
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OP260GP PMI
Abstract: No abstract text available
Text: OP-260 DUAL, HIGH-SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIER P recisio n M o n o lith ic s Inc. PIN CONNECTIONS FEATURES • • • • • • V ery H igh S le w R a te . 1000V/|xs Typ - 3 d B B a n d w id th A y =+1 . 90M H z Typ
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OP-260
20-CONTACT
OP260A2*
OP260AJ*
OP260GP PMI
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Horizontal Transistor TT 2246
Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz
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HFA1105
HFA1115
350MHz
225MHz
000V/ps
50MHz.
Horizontal Transistor TT 2246
ca3080 spice
vogt transformer 406 69
CA3098 equivalent
ICL8038 applications advantages disadvantages
gi 9544
class d amplifier schematic hip4080
STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY
siemens transistor manual
BUF601
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY S I M 1 C O i\ 1> U .T O H ADVANCE INFORMATION S SP8855D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP88550 is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts in the
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SP8855D
SP88550
SP8852D
SP8854D
SP8855D
OP-27G
L7812CP
BB405B
40MHz
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S E Y S I >1 I t O S I l ( I D ADVANCE INFORMATION l< S SP8854D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP8854D is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts In the
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SP8854D
SP8854D
SP8852D
SP6655D
OP-27G
L7812CP
BB405B
40MHz
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY SI M i l ADVANCE INFORMATION O |\ I U I O K S SP8852D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP8852D is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts in the
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SP8852D
SP8852D
SP8854D
SP8855D
RNET110K
OP-27G
L7812CP
BB405B
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