OPNEXT LASER DIODE Search Results

TR6143

Abstract: advantest TR6143 opnext laser diode HP6655A apc driver for laser diode DESIGN AC VOLTMETER USING TWO DIODE Tektronix TDS 460A manual LDC-3722B infrared laser diode AM503
Contextual Info: ODE-608-001B Z Opnext Laser Diodes Surge Damage Prevention Manual Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility

LD5033

Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Contextual Info: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet

OpNext

Abstract: opnext laser diode
Contextual Info: Opnext 642nm / 150mW Laser Diode HL6385DG Series World’s First Laser With High Output Power and Single Longitudinal Mode u u u Visible light sources for miniature display Low aspect ratio Φ5.6mm Package High Output Power and Single Longitudinal Mode Laser Diode

dfb activation energy

Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Contextual Info: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a

opnext l

Abstract: LE7602-LAC LE7602-LA350C LE7602-LA180C Hitachi DSA0045
Contextual Info: Technical Data Rev. 1.1, May 2002 LE7602-LAC, LE7602-LAxxxC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)

LB7678

Abstract: opnext Hitachi DSA0045
Contextual Info: Preliminary Technical Data Rev. 1.0, July, 2001 LB7678 op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 2.5 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated external modulator

opnext

Abstract: LE7602-SAC LE7602-S hitachi laser diode opnext l 7Pin Connector opnext laser diode Hitachi DSA0045 opnext ps
Contextual Info: Technical Data Rev. 1.0, May 2001 LE7602-SAC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)

opnext

Abstract: LB7677L Hitachi DSA0045 opnext ps Opnext t
Contextual Info: Preliminary Technical Data Rev. 0.1, July 31, 2001 LB7677L op next Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been

opnext

Abstract: LE5302-HS Hitachi DSA0045 opnext ps hitachi laser diode
Contextual Info: Short Form Preliminary Technical Data Rev. 0.1 December, 2000 op next LE5302-HS Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been

hl6360mg

Abstract: HL6361MG
Contextual Info: HL6360MG/61MG Low Operating Current Visible Laser Diode ODE-208-010 Z Target specification Rev.0 Apr. 2005 Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for

opnext

Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

009C

Abstract: HL6358MG HL6359MG
Contextual Info: HL6358MG/59MG ODE-208-009C Z Low Operating Current Visible Laser Diode Preliminary Rev.3 Jun. 09, 2006 Description The HL6358MG/59MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6554MG

Contextual Info: HL6554MG ODE-208-036 Z Preliminary Rev.0 Jul. 13, 2005 AlGaInP Laser Diodes Description The HL6554MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.

laser diode 940 nM 200mW

Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Contextual Info: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and

Contextual Info: HL63101MG/102MG ODE2065-01 T Target Specification Rev.1 Apr. 17, 2009 Low Operating Current Visible Laser Diode Description The HL63101MG/102MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Contextual Info: HL6395MG/96MG High Temperature Low Operating Current Visible Laser Diode ODE2066-01 T Target Specification Rev.1 Nov. 17, 2008 Description The HL6395MG/96MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

HL6398MG

Contextual Info: HL6397MG/98MG ODE2067-01 P Preliminary Rev.1 Jun. 03, 2009 High Temperature Low Operating Current Visible Laser Diode Description The HL6397MG/98MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Contextual Info: HL6386DG ODE-208-077 Z Visible High Power Laser Diode Preliminary Rev.0 Dec. 13, 2007 Description The HL6386DG is 0.64 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser display and various other types of optical equipment.

208017

Abstract: ODE-208-017 HL6312G HL6313G
Contextual Info: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types

Contextual Info: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6364DG

Abstract: HL6365DG
Contextual Info: HL6364DG/65DG ODE-208-060 Z Low Operating Current Visible Laser Diode Preliminary Rev.0 May 17, 2006 Description The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Contextual Info: HL6366DG/67DG ODE-208-061A Z Low Operating Current Visible Laser Diode Preliminary Rev.1 Oct. 05, 2006 Description The HL6366DG/67DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6556MG

Contextual Info: HL6556MG ODE-208-041 Z Preliminary Rev.0 Feb. 06, 2007 AlGaInP Laser Diodes Description The HL6556MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.

HL6557MG

Contextual Info: HL6557MG ODE-208-053 Z Preliminary Rev.0 Feb. 22, 2007 AlGaInP Laser Diodes Description The HL6557MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.