OQ26 Search Results

cq837

Contextual Info: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36

ta25 du14

Contextual Info: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits

Contextual Info: 1 ,0 4 8 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY D ESC R IPTIO N The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by

THM401020

Contextual Info: 1,048,576 W O R D Sx 4 0 BIT D YN A M IC RAM MODULE DESCRIPTION The THM401020SG is a 1,048,576 words by 40 bits dynamic RAM module which assembled .10 pcs of TC514400J on the printed circuit board. The THM401020SG is optimized for application to the systems which are required high density and

Contextual Info: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.

Contextual Info: ADVANCE fUHf— p a n i s i 1 MT58LC64K32/36E1 6 4 K x 32/36 SYNCBURST SRAM +3.3V SUPPLY, 2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10,11 and 12ns

Contextual Info: AK63264AW 65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory M O C M IT CORPORATION DESCRIPTION The Accutek AK63264A SRAM Module consists of fast high performance SRAMs mounted on a low height, 64 pin SIM or ZIP Board. The module utilized four 32 pin 64K x 8 SRAMs in 300 mil

Contextual Info: ADVANCE I 128K TECHMOLOGV INC X MT58LC128K36D7 36 SYNCBURST SRAM 128K x 36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • Fast access times: 4.5,5,6,7 and 8ns

MH25632CNXJ-7

Contextual Info: MITSUBISHI LSIs DRAM MODULE MH25632CNXJ-6,-7 FAST PAGE MODE 83886Q8-BIT(262144-WORD BY 32-BIT)DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The M H25632CN XJ is 262144-word by 32-bit dynamic RAM module. That module consists of two industry 256K

Contextual Info: SGRAM MODULE KMM965G512BQ P N / KMM966G512BQ(P)N 4MB SGRAM MODULE (512Kx64 SODIMM based on 256Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.5 July 1998 Rev. 2.5 (July. 1998) ELECTRONICS SGRAM MODULE KMM965G512BQ(P)N / KMM966G512BQ(P)N

Contextual Info: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS & KMM372F41 OBK/BS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM372F40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: HYUNDAI HYM5V72A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 5V 72A 214A is a 2M x 72-bit EDO m ode C M O S DRAM module consisting of nine H Y51V 17804B in 28 28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pm glass-epoxy printed circuit board. 0 ln F and 0.01 uF

TM248NBK36U

Abstract: TM124MBK36U TM248NBK36F TM124MBK36F
Contextual Info: TM124MBK36F, TM124MBK36U1048576 BY 36-BIT DRAM MODULE TM248NBK36F, TM248NBK36U 2097152 BY 36-BIT DRAM MODULE SMMS650A - APRIL 1995 - REVISED JUNE 1995 | • Organization TM124MBK36F . . . 1 048 576 x 36 TM248NBK36F . . . 2 097 152 x 36 • Single 5-V Power Supply ±10% Tolerance

BK36A-70

Contextual Info: TM497MBK36A, TM497MBK36Q 4194 304 BY 36-BIT DYNAMIC RAM MODULE S M M S 446A -D EC E M B ER 1992-R E V IS E D JANUARY 1993 * Organization . . . 4 194 304 x 36 * Single 5-V Power Supply ±10% Tolerance * Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME

MT501C

Contextual Info: ADVANCE 128K SYNCHRONOUS SRAM • • • • • • • • • • • • • • +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE PIN ASSIGNMENT Top View Fast access tim es: 4 .5 ,5 , 5.5, 6 and 7ns Fast O E # access tim es: 4.5, 5, 5.5 and 6ns

Q6162

Contextual Info: MITSUBISHI LSIs MH51236XJ,SXJ-8,-10 FAST PAGE MODE 18874368-BIT 524288-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION The M H 51 236 X J, SXJ is 5 2 4 2 8 8 -w o rd by 3 6 - b it dynamic PIN CONFIGURATION (TOP VIEW) RAM module. This consists o f fo u r industry standard 256K

Contextual Info: DESCRIPTION AK632256AW 262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory MICROCIRCUIT CORPORATION The Accutek AK632256AW SRAM Module consists of eight fast high performance SRAMs mounted on a low profile, 64 pin SIM PCB. The module utilizes four 28 pin 256K x 4 SRAMs in 300 mil

tc 97101

Abstract: 5 PEN PC TECHNOLOGY advance oQ26
Contextual Info: ADVANCE M lf~ a n M 1 2, 4 M EG BURST EDO DRAM MODULE M T9LD 272A B, M T18LD 472A B 72 B U RST EDO DRAM M O D ULES X 2, 4 MEG x 72 16, 32 MEGABYTE. NONBUFFERED, 3.3V, ECC, 8 CAS, BURST EDO FEATURES • • • • • • PIN ASSIGNMENT Front View 168-Pin DIMM

Contextual Info: KMM5362000A/AG DRAM MODULES 2M X36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1

Contextual Info: PRELIMINARY 32K x 32 Pipelined Burst SRAM +3.3 V Supply, Fully Registered Inputs, Outputs, and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 8 and 9 ns The Sharp Synchronous SRAM family employs high­ speed, low-power CMOS designs using a thin-film tran­

ED18L32512

Abstract: ED18L
Contextual Info: W £ \ EDI8L326SC ÎŒ CIRO NC ÛESGNS N C 64Kx32 SRAM Module 64Kx32 CMOS High Speed Static RAM Features 64K x32 bit C M O S Static The E D I8 L 3 2 6 5 C is a high speed, high performance, four R andom A cce ss M em ory Array megabit density Static R A M organized as a 64K x32 bit

Contextual Info: O K I Semiconductor MSC238361A-xxBS24/DS24 8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC238361 A-xxBS24/ DS24 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAMs 4M x 4 in SOJ packages

LT-88

Contextual Info: HYM71V16755HCT8 16Mx72, 16Mx8 based, PC100 DESCRIPTION The H ynix H Y M 71V16755HC T8 Series are 16M x72bits ECC Synchronous DRAM M odules. The m odules are com posed o f nine 16M x8bits CM O S Synchronous DR AM s in 400m il 54pin TS O P -ll package, one 2K bit EEPROM in 8pin TSSO P package on a 168pin

S-10

Contextual Info: 1,0 48 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM MODULE PRELIMINARY DESCRIPTION The THM 321020S is a 1,048,576 words by 32 b its dynam ic RAM module which assembled 8 pcs of T C 514400J on the printed circuit board. The THM 321020S can be as well used as 2,097,152 words by