P CHANNEL 600V 5A Search Results

Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for

Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for

Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for

IR21084

Abstract: IR21084S IR2108 IR2108S MS-012AA MS-012AB mosfet te 2304
Contextual Info: Data Sheet No. PD60161-P IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages Fully operational to +600V 14-Lead SOIC Tolerant to negative transient voltage 8-Lead SOIC IR21084S IR2108S dV/dt immune • Gate drive supply range from 10 to 20V

IXTH10P60

Contextual Info: Power MOSFETs IXTT10P60 IXTH10P60 VDSS ID25 RDS on = = ≤ - 600V - 10A Ω 1Ω P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: IXTH10P60 IXTT10P60 Standard Power MOSFETs VDSS ID25 RDS on = = ≤ - 600V - 10A Ω 1Ω P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Surface Raceway PAN -WAY SURFACE RACEWAY For Power and Communication Cabling PAN-WAY™ Raceway Systems meet or exceed the UL-5A testing standard. • Used to route, protect, and conceal voice, data, fiber optic and video cabling • Can be used with PAN-NET ™ Network Cabling System

2SK2528-01

Abstract: LFT 5A
Contextual Info: FU JI 2SK2528-01 N-channel MOS-FET ö ü J M e ir u ö L J K FAP-II Series 900V 3 ,6 Q 5A 80W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications

Contextual Info: F U J I lá lU M e L T L M J É 2 S K 2 5 2 7 -0 1 M R N-channel MOS-FET FAP-II Series 900V 5A 40W > Outline Drawing > Features - 3,6£2 High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof

Contextual Info: PU J1 2SK2528-01 N-channel MOS-FET ö t ö lS U 'U ä U K FAP-II Series 900V > Features 3,6 0 . 5A Outline Drawing TO-3P - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: F U J I [M Ü J M e u M ] ü ¡ N-channel MOS-FET 2 S K 2 3 9 7 -0 1 M R FAP-II Series 800V 2,3£2 5A 50 W > Outline Drawing > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - Vgs = ± 30V Guarantee

Contextual Info: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •

l0ka

Abstract: fet 900v
Contextual Info: F U JI S 'U M e u 'lJ t ìU t ì 2SK2526-01 N-channel MOS-FET FAP-II Series 900V 5A 60W > Outline Drawing > Features - 3,6 0 , High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof

Contextual Info: FU JI 2SK1943-01 N-channel MOS-FET FAP-IIA Series 900V > Features 2 ,8 Q 5A 80W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications

DS800

Abstract: 2SK2397-01MR
Contextual Info: F U JI nuMEirijajG 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3 a 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications

Contextual Info: FU JI 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3 ,6 Q 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof TO-3P 4.5 > Applications

Contextual Info: FU JI 2SK2397-01MR N-channel MOS-FET FAP-II Series > Features - 2,3H 80 0V 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

diode U1J

Abstract: 2SK2866 10A 600V MOS toshiba U1J 550 U1J diode U1J ON semiconductor diode U1J ON ON U1J 2-10P1B on semiconductor U1J
Contextual Info: TOSHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS : RßS (ON) = 0-540 (Typ.)

40w fluorescent lamp inverter circuit

Abstract: FL10KM12A FL10KM-12A
Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FL10KM-12A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FL10KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2

FS10UM12

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-12 HIGH-SPEED SWITCHING USE FS10UM-12 •■600V • 0.94Q 10A • V d s s . • TDS ON (MAX) • I d . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­

Contextual Info: MITSUBISHI Neh POWER MOSFET FK10SM-12 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 tp 2.8 • VOSS . 600V • TDS ON (MAX) . 1.18Q

Contextual Info: TO SHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 03.6 ± 0.2 10.3MAX-

Contextual Info: MITSUBISHI Neh POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE FK10VS-12 •V o s s . 600V • TDS ON (MAX) .1 . 1 8 0