P CHANNEL LOW GATE CHARGE 100A Search Results

Contextual Info: STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH50P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

STRH12P10ESY1

Abstract: STRH12P10ESY3
Contextual Info: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

JESD97

Abstract: STRH12P10ESY1 STRH12P10ESY3 MG 5248
Contextual Info: STRH12P10ESY1 STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH12P10ESY1 100 V STRH12P10ESY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.

STRH50P6FSY1

Abstract: STRH50P6FSY3
Contextual Info: STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH50P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■

STRH40P10FSY3

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA

UT3419

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.

UT3419

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.

Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3443 Power MOSFET P-CHANNEL 2.5-V G-S MOSFET  DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate

Contextual Info: Mar. 2005 AOD413, AOD413L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance

Contextual Info: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.

D425 transistor

Abstract: d425 mosfet
Contextual Info: Single P-channel MOSFET ELM340703A-N •General description ■Features ELM340703A-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. Internal ESD protection is included. • • • • • Vds=-30V Id=-15A

UTD405

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD405 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTD405 can provide excellent RDS ON , low gate charge and low gate resistance by using advanced trench technology. This device is well suited for high current load

AO8403

Abstract: AO8403L
Contextual Info: AO8403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as

Contextual Info: Single P-channel MOSFET ELM34423AA-N •General description ■Features ELM34423AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. Internal ESD protection is included. • • • • • Vds=-30V Id=-8A

IRF5820

Abstract: SI3443DV IRF5800 IRF5850
Contextual Info: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF5850

Contextual Info: PD - 93947 IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier