UT3419 Search Results
UT3419 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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UT3419G
Abstract: UT3419
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UT3419 UT3419G UT3419G-AE3-R OT-23 QW-R502-391 UT3419 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. |
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UT3419 UT3419 UT3419G-AE2-R UT3419G-AE3-R OT-23-3 OT-23 QW-R502-391 | |
Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT3419 Power MOSFET 2 0 V , 3 .5 A P-CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The |
Original |
UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. |
Original |
UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 | |
UT3419Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection. |
Original |
UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 | |
UT3419Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection. |
Original |
UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 |