P CHANNEL MOSFET 1A Search Results

P CHANNEL MOSFET 1A Result Highlights (5)

Part	Manufacturer	Description
TK2R4A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
SSM6K517NU	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 30 V, 6 A, 0.0391 Ohm@4.5V, UDFN6B

P CHANNEL MOSFET 1A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
VEC2605 Contextual Info: VEC2605 Ordering number : ENN8197 P-Channel and N-Channel Silicon MOSFET VEC2605 General-Purpose Switching Device Applications Features • • • • Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance	Original	VEC2605 ENN8197 VEC2605	PDF
FDMJ1032C Abstract: marking 032 SC-75 Dual N & P-Channel Contextual Info: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement	Original	FDMJ1032C FDMJ1032C marking 032 SC-75 Dual N & P-Channel	PDF
MCH6644 Abstract: marking WU Contextual Info: MCH6644 Ordering number : ENN8959 N-Channel and P-Channel Silicon MOSFETs MCH6644 General-Purpose Switching Device Applications Features • • • • The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density mounting.	Original	MCH6644 ENN8959 MCH6644 marking WU	PDF
CPH3309 Abstract: CPH5835 MCH5835 SBS010M Contextual Info: CPH5835 Ordering number : ENN8207 CPH5835 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET CPH3309 and a Schottky Barrier Diode (SBS010M) contained	Original	CPH5835 ENN8207 CPH3309) SBS010M) CPH3309 CPH5835 MCH5835 SBS010M	PDF
CPH5802 Contextual Info: Ordering number : ENN6899 \| MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)	OCR Scan	ENN6899 CPH5802 CH3306) SBS004) CPH5802]	PDF
ENN8206 Abstract: CPH5810 MCH3312 Contextual Info: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)	Original	CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.	Original	UT2305 UT2305 UT2305G-AE2-R UT2305G-AE3-R UT2305G-AG3-R OT-23-3 OT-23 OT-26 OT-23 QW-R502-133	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.	Original	UT2305 UT2305 UT2305L-AE2-R UT2305G-AE2-R UT2305L-AE3-R UT2305G-AE3-R UT2305L-AG3-R UT2305G-AG3-R OT-23-3 OT-23	PDF
EMH2603 Contextual Info: EMH2603 Ordering number : ENA0657 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2603 General-Purpose Switching Device Applications Features • • • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and	Original	EMH2603 ENA0657 EMH2603 A0657-7/7	PDF
Contextual Info: EMH2602 Ordering number : EN8732 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and	Original	EMH2602 EN8732 EMH2602	PDF
Contextual Info: ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8660 General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and	Original	ECH8660 ENA1358B ECH8660 A1358-8/8	PDF
EMH2601 Abstract: EN8731 it10408 Contextual Info: EMH2601 Ordering number : EN8731 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 General-Purpose Switching Device Applications Features • • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and	Original	EMH2601 EN8731 EMH2601 EN8731 it10408	PDF
a1358 Abstract: ECH8660 Contextual Info: ECH8660 Ordering number : ENA1358 SANYO Semiconductors DATA SHEET ECH8660 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and	Original	ECH8660 ENA1358 ECH8660 PW10s, A1358-6/6 a1358	PDF
W360 Abstract: FW360 Contextual Info: Ordering number : ENN7556 FW360 N-Channel and P-Channel Silicon MOSFETs FW360 Ultrahigh-Speed Switching, Motor Driver Applications Preliminary Features • The FW360 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129	Original	ENN7556 FW360 FW360 FW360] W360	PDF

EMH2602 Contextual Info: EMH2602 Ordering number : EN8732A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and	Original	EMH2602 EN8732A EMH2602	PDF
Contextual Info: ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8660 General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and	Original	ECH8660 ENA1358B ECH8660 A1358-8/8	PDF
Contextual Info: VEC2611 VEC2611 Ordering number : ENA0425 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.	Original	VEC2611 ENA0425 VEC2611 900mm2â VEC2611/D	PDF
diode N1004 Abstract: N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603 Contextual Info: CPH5812 Ordering number : EN7467B SANYO Semiconductors DATA SHEET CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3317 and a Schottky Barrier Diode (SBS010M)	Original	CPH5812 EN7467B MCH3317) SBS010M) diode N1004 N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603	PDF
CPH5807 Abstract: MCH3309 SBS004 Contextual Info: CPH5807 Ordering number : EN7751B CPH5807 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Silicon MOSFET MCH3309 and a Schottky Barrier Diode (SBS004) contained in	Original	CPH5807 EN7751B MCH3309) SBS004) CPH5807 MCH3309 SBS004	PDF
7382 Abstract: CPH5820 D2503 MCH3308 SBS006M Contextual Info: Ordering number : ENN7382 CPH5820 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5820 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2171	Original	ENN7382 CPH5820 MCH3308) SBS006M) CPH5820] 7382 CPH5820 D2503 MCH3308 SBS006M	PDF
ECH8619 Abstract: ech8 sanyo Contextual Info: ECH8619 Ordering number : ENA0658 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8619 General-Purpose Switching Device Applications Features • • The ECH8619 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and	Original	ECH8619 ENA0658 ECH8619 A0658-6/6 ech8 sanyo	PDF
IC rl46 Abstract: VEC2611 Contextual Info: VEC2611 Ordering number : ENA0425 SANYO Semiconductors DATA SHEET VEC2611 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,	Original	VEC2611 ENA0425 VEC2611 900mm. A0425-6/6 IC rl46	PDF
a1358 Abstract: a-1358 Contextual Info: ECH8660 Ordering number : ENA1358A SANYO Semiconductors DATA SHEET ECH8660 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and	Original	ENA1358A ECH8660 ECH8660 PW10s, 1200mm2 A1358-6/6 a1358 a-1358	PDF
Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171	Original	ENN6980 CPH5804 MCH3312) SBS006M) CPH5804]	PDF

P CHANNEL MOSFET 1A Search Results

P CHANNEL MOSFET 1A Result Highlights (5)

P CHANNEL MOSFET 1A Datasheets Context Search

VEC2605

FDMJ1032C

MCH6644

CPH3309

CPH5802

ENN8206

EMH2603

EMH2601

a1358

W360

EMH2602

diode N1004

CPH5807

7382

ECH8619

IC rl46

a1358