P CHANNEL MOSFET 40A Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced

613 MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

Contextual Info: ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET ECH8668 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

ECH8668

Abstract: ECH8660 a15102
Contextual Info: ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET ECH8668 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

ENA1510A

Abstract: a15102 40v 7.5a P-Channel N-Channel
Contextual Info: ECH8668 Ordering number : ENA1510A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8668 General-Purpose Switching Device Applications Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

Contextual Info: ECH8668 Ordering number : ENA1510A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8668 General-Purpose Switching Device Applications Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

ECH8608

Contextual Info: ECH8608 Ordering number : ENN8179 N-Channel and P-Channel Silicon MOSFETs ECH8608 General-Purpose Switching Device Applications Features • • The ECH8608 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.

Contextual Info: Ordering number : ENA1510A ECH8668 Power MOSFET http://onsemi.com 20V, 7.5A, 17mΩ, –20V, –5A, 38mΩ, Complementary Dual ECH8 Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

Contextual Info: Ordering number : ENA1777A ECH8661 Power MOSFET http://onsemi.com 30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8 Features • • • • • ON-resistance Nch: RDS on 1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

AON7407

Contextual Info: AON7407 20V P-Channel MOSFET General Description Product Summary The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

GC 72 smd diode

Abstract: smd code marking gC SOT-23 smd marking gc diode bad sot23 smd 1p sot-23 smd diode marking 1P MARKING tAN SOT-23 diode
Contextual Info: PD - 9.1413C International I R Rectifier IRLMS5703 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vqss = *30V R D S (o n ) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: AP4407I-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G -30V 14m -40A RoHS Compliant & Halogen-Free S Description

Contextual Info: AP4435GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D Lower On-resistance RDS ON Fast Switching Characteristic ID RoHS Compliant & Halogen-Free -30V 20m -40A G S Description

T1341

Contextual Info: SFT1341 Ordering number : ENA1444 SANYO Semiconductors DATA SHEET SFT1341 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

SUU50N03-12P

Abstract: ON285
Contextual Info: SPICE Device Model SUU50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

ON285

Abstract: SUR50N03-12P
Contextual Info: SPICE Device Model SUR50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

ON285

Abstract: SUD50N03-12P
Contextual Info: SPICE Device Model SUD50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: ECH8654 Ordering number : ENA0981A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • Low ON-resistance Halogen free compliance • • 1.8V drive Protection diode in Specifications

Contextual Info: ECH8309 Ordering number : ENA1418A SANYO Semiconductors DATA SHEET ECH8309 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

A1429

Abstract: 95A MARKING
Contextual Info: ECH8320 Ordering number : ENA1429A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8320 General-Purpose Switching Device Applications Features • • • • Low ON-resistance 1.8V drive Halogen free compliance Protection diode in Specifications

41410

Contextual Info: ECH8309 Ordering number : ENA1418A SANYO Semiconductors DATA SHEET ECH8309 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: ECH8315 Ordering number : ENA1387A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8315 General-Purpose Switching Device Applications Features • • • • Low ON-resistance 4V drive Halogen free compliance Protection diode in Specifications