P-CHANNEL DEPLETION Search Results

MPF970

Abstract: MPF971 MPF910
Contextual Info: MPF970 silicon MPF971 SILICON P-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS P-CHANNEL Depletion Mode (Type A ) Junction Field-Effect Transistors designed for chopper and high-speed switching applications. JUNCTION FIELD-EFFECT TRANSISTORS M A XIM U M RATINGS

MFE4007

Abstract: mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012
Contextual Info: MFE4007 silicon MFE4012 thru P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Field-Effect Transistors designed for general-purpose amplifier applications. P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS • Tightly Specified loss Ranges — 2:1 for All Types

P-Channel Depletion Mosfets

Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
Contextual Info: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,

BSS87

Abstract: BSP315 SOT223 BSP171 BSS125
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317

692B

Abstract: 444L-EVAL COP420L COP444L NSA1166 COP445L NSA1541A 1001R lcd epsom PC108A
Contextual Info: Semiconductor COP444L/COP445L/COP344L/COP345L Single-Chip N-Channel Microcontrollers General Description Features The COP444L, COP445L, COP344L, and COP345L SingleChip N-Channel Microcontrollers are members of the C O P S tm family, fabricated using N-channel, silicon gate

BSP87

Abstract: bsp296 l BSS125 bss149 to92d
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135

2N3822 equivalent

Abstract: 2N3822
Contextual Info: ' PH IL IP S INTERNATIONAL I l MIE D • ■ “ ~ 711002b a 0 2 b 3 m Jl T ■PHIN 2N3822 T — - z y - z s ' N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel, depletion ty p e , silicon ju n ctio n fie ld -e ffe c t transistor, designed p rim a rily fo r

Sot23 SL6

Abstract: BSS315 siemens sot223 BSP296N BSS100 BSS125 BSP129 BSP17 BSP89 BSS129
Contextual Info: SIEMENS AKTIE NGE SELLSCHAF bOE D Ö235b05 0045424 77T « S I E G SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Maxim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP125 BSP129* BSP135* BSP149*

Depletion MOSFET

Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
Contextual Info: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

BF960

Abstract: transistor BF960 BF-960 transistor BG 20
Contextual Info: 711002b Püb7531 fi3 a H P H IN BF960 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r use in u.h.f. applications in television tuners and professional communication equipment.

Contextual Info: PMBF4391 PMBF4392 PMBF4393 bbS3^31 0025813 383 « A P X N AMER PHILIPS/DISCRETE b7E D y v . N-CHANNEL FETS Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended fo r application in thick and thin-film circuits. The transistors are intended fo r low-power

2114 ram

Abstract: RAM 2114 COP420L 692B NSA1166 lcd epsom COP344L COP345L COP400 COP444L
Contextual Info: COP444L/COP445L/COP344L/COP345L Single-Chip N-Channel Microcontrollers G eneral Description Features The COP444L, COP445L, COP344L, and COP345L Single­ Chip N-Channel Microcontrollers are members of the C O P S family, fabricated using N-channei, silicon gate

B913

Abstract: mm5204 COP401L COP402 COP410L N40A bd ips ips bd mm74ls373 b9131
Contextual Info: COP401L National Semiconductor COP401L ROMIess N-Channel Microcontroller General Description Features The CO P401L ROM Iess Microcontroller is a member of the C O P S family of microcontrollers, fabricated using N-channel, silicon gate MOS technology. The CO P401L

Contextual Info: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

B817

Abstract: cop421l diagram of b817 B817 equivalent COP420L diode SKE 4F "B817" mm74ls373 MM74LS C0P404LSN-5
Contextual Info: COP4Q4LSN-5 National Semiconductor COP404LSN-5 ROMIess N-Channel Microcontrollers General Description Features The COP404LSN-5 ROMIess Microcontroller is a member of the C O P S t m family, fabricated using N-channel, silicon gate MOS technology. The COP404LSN-5 contains CPU,

ultra FAST DMOS FET Switches

Abstract: SD2100 depletion fet depletion mode fet SST2100 XSD2100 FAST DMOS FET Switches
Contextual Info: N-Channel Depletion Mode Lateral DMOS FET CCIIOQIC CORPORATION \J SD2100/SST2100 FEATURES DESCRIPTION • Fast S w itching. toN 1.0ns ! . crss2 p f The SD2100/SST2100 is a depletion mode DMOS lateral FET

2N5460

Contextual Info: MOTOROLA Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA JF E T A m p lifie rs 2N 5460 th ru 2N 5462 P-Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit VdG 40 Vdc V g SR 40 Vdc 'G f 10 mAdc Total Device Dissipation @ T /\ = 25°C

2n3966

Abstract: transistor 2sk CRS15
Contextual Info: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f

k 373

Abstract: MRC252 BSD254 BSD254A BSD254AR
Contextual Info: LiLi53cì3 1 Philips Sem iconductors 373 N-channel depletion mode vertical D-MOS transistors APX BSD254; BSD254A; BSD254AR N AflER P H I L I P S / D I S C R E T E FEATURES Product specification b7E D Q UICK REFERENCE DATA • High-speed switching SYMBOL • No secondary breakdown.

MM5314N

Abstract: 7 segment led 12 Hour Digital Clock Circuit 12 hour digital clock with 7 segment displays and 7-segment led x4 MM5314 equivalent MM5314 MM5314 PIN DIAGRAM 7 segment 24 hr clock circuit TTL 24 hour digital clock dm8863
Contextual Info: rm psryi Digital Clocks MM5309, MM5311, MM5312, MM5313, \ i MM5314 ,ÌMM5315 Digital Clocks General Description These digital clocks are monolithic MOS Integrated circuits utilizing P-channel low-thresltold^nhancement mode and ion implanted, depletion mode devices. The

t430 transistor

Abstract: MOS T430 881-1 nec fet chopper P514 T430 66771 TG28 upa34a T030
Contextual Info: NEC j s if / \ - r x b ~ 7 C o m p o u n d T ra n s is to r I / * a ' y s < & J : V r& W } m m & ¿ P A 3 4 A m N-Channel Depletion Twin M O S FET Chopper, Differential Amplifier O2 yuMOS F E T $: |p]— -f- -y 7 °_ h l' S L X ^ P A C K A G E D IM EN SIO N S Unit : mm)

BSR56

Contextual Info: • bbS3T31 D03SS33 311 H A P X N AMER PHILIPS/DISCRETE BSR56 BSR57 BSR58 b7E D y v N-CHANNEL FETS Symmetrical silicon n-channel depletion type ju nctio n field-effect transistors in a plastic m icrom iniature envelope intended fo r application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.

MFQ5460P

Abstract: 2N5460 DS46
Contextual Info: MFQ5460P o QUAD DUAL-IN-LINE P-CHANNEL JUNCTION FIELD-EFFECTTRANSISTORS . . . depletion mode Type A junction field-effect transistors signed for use in general-purpose amplifier applications. . de- High Gate-Source Breakdown Voltage — V(BR)GSS = 40 Vdc (Min)

Contextual Info: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor