AN00E Search Results

ZNR1

Abstract: fa5595 Pd18V FA5597
Contextual Info: FA5595N Fuji Switching Power Supply Control IC FA5595N Application Note DEC.-2009 Fuji Electric Systems Co., Ltd. AN00E 4-Rev.0.1 DEC.-2009 1 Fuji Electric Systems FA5595N Caution 1. The contents of this note Product Specification, Characteristics, Data, Materials, and Structure etc.

CLM50

Abstract: CLM51 thyristor control 50-CLM
Contextual Info: 4QE D ^1 34^730 QG01071 5 ^SENI FASCO INDS/ SENISYS CLM50 CLM51 LEDPhotoconductor Dip Isolators CLM .mmR im n r .0 4 5 H — 5 0 - C L M 51 1- AN00E 2 ! CATHOOE -M£. -PHOTOCELL - The CLM50 and CLM51 incorporate a GaP LED coupled with a photoconductive cell to provide a D.I.P. opto isolator for both

Contextual Info: 40E D 3Mcn73fl 0001071 5 ^ S E N I m !-a -<5i FASCO INDS/ SENISYS CLM50 CLM51 LEDPhotoconductor Dip Isolators CLM 5 0 -C L M 51 1 - AN00E 2 - CATHOOE mian ! THmnn .045-H—- “ - NX. -PHOTOCELL The CLM50 and CLM51 incorporate a GaP LED coupled with a

Contextual Info: OPTEK Product Bulletin OPB745W June 1996 Reflective Object Sensor Type OPB745W 0 6 2 I 59 R NON m 3 6 5 (9 .2 7 ) 1 , 5 9 0 ( M .99) MIRE COLOR DIMENSIONS ARE IN IN O € S(M lLLtM E TE R S) FUNCTION ORANGE GREEN AN00E CATHODE UNITE BLUE COLLECTOR EMITTER

L0122

Abstract: INTERNATIONAL DEVICES ID124-R 906-230 ID5053-R
Contextual Info: PACESETTER/ INTL FEATURES DEVICES . T-1% STRAIGHT LEAD T Y P E S • Excellent on/olf contrast ratio. • GaP red excellent at low current • levels Compatible with TTL, MOS and CMOS circuits . • High brightness with wide angle. • Long life, solid state reliability.

photo transistor til 78

Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Contextual Info: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

bs2 International Rectifier

Contextual Info: INTERNATIONAL RECTIFIER b5E » 4 6 5 5 4 5 2 □ □ 1 7 4 2 2 bS2 PD-2.278 International ^RiRectifier 182NQ030 SCHOTTKY RECTIFIER 180 Amp Description/Features Major Ratings and Characteristics Characteristics lF AV Rectangular 182NQ030 Units 180 A 30 V 30,000

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

PJ23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICO N H O T-CARRIER U H F M IXER D IO D ES SILICO N H O T-CARRIER D IO D ES S C H O T T K Y BA R RIER D IO D ES . . . designed prim arily for UHF m ixer applications but suitablealso for use in detector and ultra-fast switching circuits. Supplied in

pm 190a

Contextual Info: PD-2.272 bitemational [k>rJRectifier 95HQ015 SCHOTTKY RECTIFIER 95 Amp Major Ratings and Characteristics Description/Features The 95HQ015 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology

D335

Abstract: D336 D334 1490I
Contextual Info: PD-2.253 kiternational ü r ]Rectifier is 3cm q . s e rie s SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Characteristics 153CMQ. Units 150 A 80 to 100 V < P -5 |« s n e 7000 A @75Apk,Tj-125°C 0.80 V -55to175 °C lF AV Rectangular

06SR

Contextual Info: surfeeleds 1206 package style ” SML-LXF1206XC-TR F iat S o ld e r Term inais • Features/Options C A T H D D E MAR K <SR: A N O D E • Standard 1206 Package • State-of-the-Art LED Die • W ide Angle of Emission • High Volume Capacity Production

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

SD-51

Abstract: SD51 D278
Contextual Info: PD-2.327 International [tor]Rectifier SD51 SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Features Characteristics SD51. Units V AV Rectengutar waveform 60 A 35/45 V A V RBM TheSD51 Schottky rectifier has been optimized for very low

Contextual Info: surfeeleds TM 1206 package style SML-LXFT1206XC-TR Fiat Solder Terminais CATHODE f Ultra Thin PCB ANODE MARK FOR SR r LJ 1.60 [0.0 63] 1_ . 0.50 [0.020] (2 PLS.) Features/Options • Standard 1206 Package [0.075] — [0.079] — j [0.030] (SR) CATHODE

s 15018

Contextual Info: N T E ELECTRONIC?; TNC_ ¿ s e ]> • b 4 3 1 5 S ci 0 0 0 5 7 0 3 2bb H N T E T -S # 'O l POSITIVE, 3 TERMINAL, ARRANGED BY OUTPUT VOLTAGE Vottag* n Regulated Voltage Out ±5% Volti) KTEfype Number Cm * Styl« (Vo«*) Diagram Number V«ui V* Hu urn

yoke coil diagram

Abstract: C171 Scans-0017362 12.00 ju
Contextual Info: 21AW P4 ET-T1151 ¿ Page 1 21AWP4 CATHODE-RAY TUBE ^ 10-54 TUBES 21-INCH RECTANGULAR GLASS FOCUS— MAGNETIC DEFLECTION— MAGNETIC 72-DEGREE DEFLECTION ANGLE 19'/s- BY 15-INCH PICTURE SIZE FACEPLATE— SPHERICAL, GRAY ION-TRAP GUN EXTERNAL CONDUCTIVE COATING

Brimar R2

Abstract: speaker with screen brimar
Contextual Info: Mnmu POWER PENTODE VALVE TYPE PEN.B.l The BRIMAR Pen.B.l valve has been designed to give the maximum undistorted output with the minimum consumption of H .T . current. The sensitivity of the valve is of a very high o rd er; with an input grid swing of approximately 3'2 volts R.M .S.,

j171

Abstract: B6-63 PICTURE TUBE Scans-0017362
Contextual Info: 21AVP4-B/21AVP4-A 21AVP4-B/21AVP4-A £0 / ^ PagLl ET-T1199A CATHODE-RAY TUBE TUBES 19'/8 BY 15-INCH PICTURE SIZE 21-IN C H , RECTANGULAR, GLASS FACEPLATE— SPHERICAL, G R A Y FOCUS— ELECTROSTATIC IO N -T R A P GUN DEFLECTION— M A G N ETIC A LU M IN IZE D SCREEN

irf 1305

Abstract: 2SD 2689 LM6111M 9221 J08A LM611 LM611AIN LM611AMN LM611BIN LM611MN
Contextual Info: N a t i o n a l S e m i c o n d u c t o LM611 9 r LM611 Operational Amplifier and Adjustable Reference General Description Features The LM611 consists of a single-supply op-amp and a pro­ grammable voltage reference in one space saving 8-pin package. The op-amp out-performs most single-supply opamps by providing higher speed and bandwidth along with

Contextual Info: I NTERNATI ONAL R E C T I F I E R bSE D • 4Ö554S2 0 0 1 7 4 5 4 1T2 B I N R PD-2.296 International Rectifier 245NQ015 SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Characteristics ' f av Rectangular waveform V RRM Description/Features 245NQ015 Units

MOC1005

Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •

2N3800

Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Contextual Info: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­