P-CHANNEL DRIVERS Search Results

EIGHT MOSFET ARRAY

Abstract: EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY AP0130NA T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY
Contextual Info: A T & T MELEC I C SSE D • □□5002b DDD2flS3 3 ■ OCTAL HIGH-VOLTAGE P-CHANNEL MOSFET ARRAY_ AP0130NA PRELIMINARY ^ Monolithic P-Channel Enhancement-Mode Description The AP0130NA Octal High-Voltage P-Channel MOSFET Array contains eight P-Channel DMOS drivers configured

Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

TC2320TG

Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

s2533

Abstract: FW377
Contextual Info: FW377 Ordering number : ENA0977 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW377 General-Purpose Switching Device Applications Features • • • For motor drivers, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage

Contextual Info: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance

CMRDM Series

Abstract: PB CMRDM Series CMRDM CMRDM3590
Contextual Info: Product Brief CMRDM3590 20V, 160mA N-Channel CMRDM7590 (20V, 140mA P-Channel) CMRDM3575 (20V, N-Channel & P-Channel) Dual, MOSFETs in the SOT-963 package SOT-963 Typical Electrical Characteristics Central Semiconductor’s CMRDM3590 (N-Channel), CMRDM7590

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

IRF95

Abstract: IRF9510 p channel mosfet 100v TA17541
Contextual Info: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

Contextual Info: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)

Contextual Info: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .

Contextual Info: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN

TD3001

Contextual Info: TD3001Y N- and P-Channel Half-Bridge MOSFETs 'Siliconix incorporated SO PACKAGE PRODUCT SUMMARY N-souRCE r r >d V ’X ’ (A) N-Channel 30 1.5 0.61 P-Channel -30 2 0.39 V (BR)DSS T I N-DRAIN N-GATE r r ~ l~ l N-DRAIN p-souRCE r r ~1~| P-DRAIN P-GATE C E

smd transistor LY

Abstract: smd transistor ISS smd transistor ISS 7
Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

CTLDM3590

Contextual Info: Product Brief CTLDM3590 20V, 160mA N-Channel CTLDM7590 (20V, 140mA P-Channel) TLM3D6D8 package MOSFETs in the TLM3D6D8 package Top View Bottom View Typical Electrical Characteristics Central Semiconductor’s CTLDM3590 (N-Channel) and CTLDM7590 (P-Channel) are enhancement-mode MOSFETs designed for

70611

Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
Contextual Info: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a

CHM9435GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM9435GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * P-Channel Enhancement

MARKING SMD transistor 12X

Abstract: smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U
Contextual Info: • ^53^31 aG23T77 5TT « A P X N AMER P H I L I P S / D I S C R E T E BST120 b7E T> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

TPCP8405

Contextual Info: TPCP8405 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPCP8405 1. Applications • Cell Phones • Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 24 mΩ (typ.) (VGS = -10 V) N-channel RDS(ON) = 20 mΩ (typ.) (VGS = 10 V)

Contextual Info: TPCP8406 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPCP8406 1. Applications • Cell Phones • Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V)

TPCP8406

Contextual Info: TPCP8406 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPCP8406 1. Applications • Cell Phones • Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V) N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V)

BST100

Abstract: philips bst100 to92 transistor pinout
Contextual Info: • bbSBÌBl □D23c171 Dfil H A P X BST100 N AMER PHILIPS/DISCRETE b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.

GSO 69

Contextual Info: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.