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    P-CHANNEL DRIVERS Search Results

    P-CHANNEL DRIVERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL DRIVERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		PDF TC2320 -200V TC2320TG TC2320TG inherent00mA

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		PDF TC2320 -200V TC2320TG TC2320TG i00mA

    TC2320TG

    Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		PDF TC2320 -200V TC2320TG TC2320TG -200mA ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA

    s2533

    Abstract: FW377
    Text: FW377 Ordering number : ENA0977 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW377 General-Purpose Switching Device Applications Features • • • For motor drivers, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage


    Original     		PDF FW377 ENA0977 PW10s) PW100ms) A0977-6/6 s2533 FW377

    CMRDM Series

    Abstract: PB CMRDM Series CMRDM CMRDM3590
    Text: Product Brief CMRDM3590 20V, 160mA N-Channel CMRDM7590 (20V, 140mA P-Channel) CMRDM3575 (20V, N-Channel & P-Channel) Dual, MOSFETs in the SOT-963 package SOT-963 Typical Electrical Characteristics Central Semiconductor’s CMRDM3590 (N-Channel), CMRDM7590


    Original     		PDF CMRDM3590 160mA CMRDM7590 140mA CMRDM3575 OT-963 OT-963 CMRDM Series PB CMRDM Series CMRDM CMRDM3590

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998


    Original     		PDF RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    IRF95

    Abstract: IRF9510 p channel mosfet 100v TA17541
    Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET


    Original     		PDF IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541

    Untitled

    Abstract: No abstract text available
    Text: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)


    Original     		PDF TPCP8407

    Untitled

    Abstract: No abstract text available
    Text: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS  TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)


    Original     		PDF TPCP8407

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .


    Original     		PDF OT-363 CJ7252KDW OT-363 2N7002K CJ502K

    CTLDM3590

    Abstract: No abstract text available
    Text: Product Brief CTLDM3590 20V, 160mA N-Channel CTLDM7590 (20V, 140mA P-Channel) TLM3D6D8 package MOSFETs in the TLM3D6D8 package Top View Bottom View Typical Electrical Characteristics Central Semiconductor’s CTLDM3590 (N-Channel) and CTLDM7590 (P-Channel) are enhancement-mode MOSFETs designed for


    Original     		PDF CTLDM3590 160mA CTLDM7590 140mA CTLDM3590 CTLDM7590 21x9x9 27x9x17

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


    Original     		PDF AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY

    CHM9435GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM9435GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * P-Channel Enhancement


    Original     		PDF CHM9435GP OT-23 OT-23) CHM9435GP

    TPCP8405

    Abstract: No abstract text available
    Text: TPCP8405 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPCP8405 1. Applications • Cell Phones • Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 24 mΩ (typ.) (VGS = -10 V) N-channel RDS(ON) = 20 mΩ (typ.) (VGS = 10 V)


    Original     		PDF TPCP8405 TPCP8405

    TPCP8406

    Abstract: No abstract text available
    Text: TPCP8406 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPCP8406 1. Applications • Cell Phones • Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V) N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V)


    Original     		PDF TPCP8406 TPCP8406

    EIGHT MOSFET ARRAY

    Abstract: EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY AP0130NA T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY
    Text: A T & T MELEC I C SSE D • □□5002b DDD2flS3 3 ■ OCTAL HIGH-VOLTAGE P-CHANNEL MOSFET ARRAY_ AP0130NA PRELIMINARY ^ Monolithic P-Channel Enhancement-Mode Description The AP0130NA Octal High-Voltage P-Channel MOSFET Array contains eight P-Channel DMOS drivers configured


    OCR Scan     		PDF AP0130NA T-43-25 AP0130NA EIGHT MOSFET ARRAY EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY

    Untitled

    Abstract: No abstract text available
    Text: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance


    OCR Scan     		PDF -200V TC2320TG TC2320 TC2320TG

    Untitled

    Abstract: No abstract text available
    Text: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN


    OCR Scan     		PDF TD3002Y VNDS06 VPDS06

    TD3001

    Abstract: No abstract text available
    Text: TD3001Y N- and P-Channel Half-Bridge MOSFETs 'Siliconix incorporated SO PACKAGE PRODUCT SUMMARY N-souRCE r r >d V ’X ’ (A) N-Channel 30 1.5 0.61 P-Channel -30 2 0.39 V (BR)DSS T I N-DRAIN N-GATE r r ~ l~ l N-DRAIN p-souRCE r r ~1~| P-DRAIN P-GATE C E


    OCR Scan     		PDF TD3001Y TD3001

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD-technology.


    OCR Scan     		PDF BST122

    smd transistor LY

    Abstract: smd transistor ISS smd transistor ISS 7
    Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan     		PDF BST120 MDA77S smd transistor LY smd transistor ISS smd transistor ISS 7

    MARKING SMD transistor 12X

    Abstract: smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U
    Text: • ^53^31 aG23T77 5TT « A P X N AMER P H I L I P S / D I S C R E T E BST120 b7E T> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan     		PDF BST120 7Z94272 7Z21S40 MARKING SMD transistor 12X smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U

    BST100

    Abstract: philips bst100 to92 transistor pinout
    Text: • bbSBÌBl □D23c171 Dfil H A P X BST100 N AMER PHILIPS/DISCRETE b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST100 200mA 7Z94272 7Z94273 7Z21844 BST100 philips bst100 to92 transistor pinout

    GSO 69

    Abstract: No abstract text available
    Text: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST110 DS3c17b GSO 69