P-CHANNEL IGBT Search Results

40n60

Contextual Info: IGBT Ordering Information SAMSUNG IGBT * ORDERING INFORMATION S G H 40 N 60 R UF D L Built in FRD UF : Ultra Fast • R : SCSOA Rated • Voltage Rating X 10 • N : N-Channel P : P-Channel •# Current Rating Package Type U : I - PAK R : D - PAK I : I2 - PAK

P-Channel IGBT

Abstract: IGBT Power Module
Contextual Info: Selector Guide 1 TMOS Power MOSFETs Plastic Packaged — T0-220AB Table 1 — P-Channel. 1-3 Table 2 — N -C h a n n e l.1-4 Table 3 — N- and P-Channel Isolated T 0 -2 2 0 . 1-7

DS4713-2

Contextual Info: 3Ë GEC P L E S S E Y SEPTEMBER 1997 SEMICONDUCTORS ADVANCE INFORMATION DS4713-2.2 ITS23F06 POWERLINE N-CHANNEL IGBT The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

PL3120

Abstract: V0 3150 optocoupler PL3150 PL-3120 atd2a SMPS A43 UCL-200 Xi 6000 Series UPS ups art 600 hp 3150
Contextual Info: Tljjm H EW LE TT » mLHM P A C K A R D 0.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3150 Single Channel HCPL-315J (Dual Channel) Features • 0.5 A Minimum Peak Output Current • 15 kV/|is Minimum Common Mode Rejection (CMR) at

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4737-2.2 ITS08C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4741-2.1 ITS25C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS25C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Tag 676 800

Contextual Info: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •

Contextual Info: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4752-2.1 ITS08C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

POWERLINE 4 PRO

Contextual Info: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4738-2.1 ITS13C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4754-2.1 ITS35C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

plessey sp

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4740-2.1 ITS40C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS40C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4739-2.1 ITS23C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS23C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

LT-15V

Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25J101 HIGH P O W E R S W I T C H I N G A P P L I C A TIO NS. Unit M O T O R C O N TR OL A P P L I C ATI ONS . . High Input in m m 0 3 .2 ± O .2 15.9 MAX Impedance . High Speed : t f = 0 . 35lis Max.

MG400Q1US1

Abstract: MG400Q1US11 MG400Q1US2 mg400q1us1-1
Contextual Info: T O SH IB A SEMICONDUCTOR TOSHIBA GTR MODULE MG400Q1US1/MG400Q1US2 TECHNICAL DATA SILICON N CHANNEL IGBT H IG H P O WE R S W I T C H I N G A P P L I C A T I O N S . M O T O R C O N T RO L A P P L I C A T I O N S . . High Input Impedance . High Speed : tf=0.5ys Max.

MG150H2YS1

Abstract: IGBT trr
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG150H2YS1 H I GH P O W E R S W I T C H I N G A P P L I C A T I O N S . MOTOR CONTROL APPLICATIONS. High Input Impedince High Speed : tf=1.0ys Max. Low Saturation Voltage : V c e (sa t)=5 .OV(Max.) trr=0.5iis (Max.) Enhancement-Mode

Contextual Info: TOSHIBA MG300Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH P O W ER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. H ig h In p u t Im p e d an ce EQ U IVA LEN T CIRCUIT H ig h Speed tf=0.5//s M a x . Cl t 1T = 0.5//s (M a x .)

Contextual Info: Si GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4719-2.2 ITS35F12 POWERLINE N-CHANNEL IGBT The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4682-3.3 ITS40F06 POWERLINE N-CHANNEL IGBT The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4717-2.2 ITS15F12 POWERLINE N-CHANNEL IGBT The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

transistor bra 44

Contextual Info: S i GEC P L ES SE Y SEPTEM BERS ADVANCE INFORMATION S E M I C O N D U C T O R S DS4718-2.2 ITS25F12 POWERLINE N-CHANNEL IGBT The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

Contextual Info: GEC P L ES SE Y S i SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4753-2.1 IT S 1 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS15C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

SGH40N60UFD

Contextual Info: SGH40N60UFD N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters

SGH80N60UFD

Contextual Info: SGH80N60UFD N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V (@ lc=40A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 50nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters

Contextual Info: TO SH IBA MG400J2YS50 TOSHIBA GTR M O D ULE SILICON N CHANNEL IGBT MG400J2 YS50 HIGH P O W E R SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. H igh In p u t Impedance Includes a Complete H a lf Bridge in One Package.