P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MARKING Search Results

S-90P0112SMA-TF

Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA

Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

FET MARKING CODE

Abstract: sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA S-90P0112SMA-TF S-90P0222SUA-TF
Contextual Info: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF 90P03
Contextual Info: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA

Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0222SUA

Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0332SUA

Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
Contextual Info: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

2SJ166

Abstract: 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
Contextual Info: m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ166, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power

2SJ356

Abstract: C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 4.5 ±0.1 IC operating at 5 V.

2SJ357

Abstract: TC-2490 C11531E
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings unit: mm used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.

2SJ358

Abstract: MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1

Hitachi 2SJ

Contextual Info: 2SJ186 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 209 2SJ186

Contextual Info: 2SJ186 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline

2sj317

Abstract: Hitachi 2SJ Hitachi DSA002779
Contextual Info: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline 2SJ317

Contextual Info: 2SJ317 Silicon P-Channel MOS FET HITACHI Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline

Hitachi 2SJ

Contextual Info: 2SJ244 - Silicon P Channel MOS FET Application UPAK High speed power switching Low voltage operation 1 Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

2SJ317

Abstract: Hitachi 2SJ Hitachi DSA00395
Contextual Info: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK

FET marking code 365

Abstract: 2SJ244 Hitachi 2SJ Hitachi DSA00337
Contextual Info: 2SJ244 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK

2SJ278

Abstract: Hitachi DSA00389
Contextual Info: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

Hitachi 2SJ

Abstract: Hitachi DSA002779
Contextual Info: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

Hitachi 2SJ

Contextual Info: 2SJ244 Silicon P-Channel MOS FET HITACHI Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for cam era or VTR motor drive circuit, power switch, solenoid drive and etc. Outline

Hitachi DSA002713

Contextual Info: 2SJ244 Silicon P-Channel MOS FET DIII-L November 1996 Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.