P-CHANNEL MOSFET SOT89 Search Results

CXDM4060P

Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
Contextual Info: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET

MARKING TR SOT23-6 P MOSFET

Abstract: marking p52 SOT23-6 marking ma sot23-6 marking QG SOT23-6 marking p52 mosfet MARKING NB SOT23-6 4422 mosfet ZVN4525E6 ZVP4525E6 ZVP4525TA
Contextual Info: ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

marking p52 mosfet

Abstract: p52 sot89 p-channel 250V power mosfet c 103 mosfet MARKING TR SOT23-6 P MOSFET ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC DSA0037423
Contextual Info: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

ut06p03

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION 1 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ 1 DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.

UT06P03

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION 1 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

UT9435

Abstract: ut9435g DSA0037680
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE  TO-252 SOT-89 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

mosfet marking l

Abstract: 48m marking
Contextual Info: CXDM4060P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high

Contextual Info: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

p52 sot89

Abstract: marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V
Contextual Info: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

MARKING TR SOT23-6 P MOSFET

Abstract: ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC
Contextual Info: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

4422 mosfet

Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
Contextual Info: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

p-channel mosfet sot89 5V

Abstract: XP161A11A1PR XP162A11C0PR MOSFET SOT-89 package p-channel mosfet with diode sot89
Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.28Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A11C0PR is a P-channel Power MOSFET with low

Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low

p-channel mosfet sot89 5V

Abstract: XP162A12A6PR XP161A11A1PR MOSFET SOT-89 package Ultra Low voltage rds mosfet p-channel mosfet with diode sot89
Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT06P03 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ 1 DESCRI PT I ON The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT9435 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.

Contextual Info: XP202A0003PR-G P-channel 4V G-S MOSFET PARMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) ( 1) Drain Current(Pulse) * ( 2) Channel Power Dissipation * Channel Temperature SYMBOL RATINGS UNITS VDSS VGSS ID IDP Pd Tch -30 ±20 -5 -20 1.5

XP162A11C0PR

Contextual Info: XP162A11C0PR ETR1125_001 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

XP162A12A6PR

Abstract: p-channel mosfet sot89 5V
Contextual Info: XP162A12A6PR ETR1126_001 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Contextual Info: XP162A12A6PR-G ETR1126_003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

XP162A11C0PR

Abstract: p-channel mosfet sot89 5V
Contextual Info: XP162A11C0PR-G ETR1125_003 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.