P-CHANNEL SOT-23 20V Search Results

BSS84

Abstract: BSS84 MARKING CODE BSS84 marking code SOT-23 marking code 84L SOT-23
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance Low Gate Threshold Voltage

marking code 84L SOT-23

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage

marking code 84L SOT-23

Abstract: sot-23 MARKING CODE GS 5 BSS84 marking code SOT-23
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage

BSS84

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance Low Gate Threshold Voltage

b84 diode

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.

CES2301

Contextual Info: CES2301 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES D -20V , -2.4A , RDS ON =95m Ω (typ) @VGS=-4.5V. RDS(ON)=130m Ω(typ) @VGS=-2.5V. High dense cell design for low RDS(ON). Rugged and reliable. 7 SOT-23 Package. G SOT-23 D S

pfv2

Abstract: mosfet vgs 5v SOT23
Contextual Info: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK2301 P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-23 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJ2305K P-Channel 12-V D-S MOSFET SOT-23-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S3

BS817

Abstract: MARKING S17 TRANSISTOR SOT-23 marking JE "marking s17"
Contextual Info: BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 - H . h - A TOR VIEW T B C Mechanical Data Case: SOT-23, Plastic

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3415 P-Channel 20-V D-S MOSFET SOT-23 FEATURE Excellent RDS(ON), low gate charge,low gate voltages 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS Load switch and in PWM applicatopns

CJ2301

Abstract: cj230 MOSFET SOT-23 P-Channel TrenchFET Power MOSFET SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3415 P-Channel 20-V D-S MOSFET SOT-23 FEATURE Excellent RDS(ON), low gate charge,low gate voltages 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS Load switch and in PWM applicatopns

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJ2305K P-Channel 12-V D-S MOSFET SOT-23-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter

SSS2301A

Abstract: sot-23 P-Channel MOSFET
Contextual Info: SSS2301A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free.

sss2309

Contextual Info: SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.