P-MOS CATALOG Search Results

Yamatake HPX T1

Abstract: HPX-nt1 AD42433E yamatake FL Yamatake hpx Yamatake yamatake HPX-NT2 Yamatake HPX V1 yamatake hpx series on delay timer
Contextual Info: No. SR. Yamatake Corporation CATALOG LISTING OUTPUT TYPE H PX-NT1 N-MOS F E T OPEN DRAIN H P X -N T 2 P-MOS F E T OPEN DRAIN SPECIFICATIONS DIMENSIONS CATALOG LISTING CORD LENGTH H P X -N T * 2000m in. H P X -N T * -L 0 5 5000m in. H P X -N T *-L 1 0 10000min.

GE4953

Abstract: Tech MOS Technology schematic diagram TECH 2
Contextual Info: GEMOS MOS FIELD EFFECT TRANSISTOR GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of

MC14050BCP

Abstract: MC14049BCP MC14050BD
Contextual Info: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power

9435 transistor

Abstract: ge9435 GE943 Tech MOS Technology 9435 sop-8 schematic diagram TECH 2 9435 so package
Contextual Info: GEMOS MOS FIELD EFFECT TRANSISTOR GE9435 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE9435 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of

14572U

Contextual Info: MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity

MC14569B

Abstract: MC14569BCP mc14526b
Contextual Info: MC14569B Programmable Divide-By-N Dual 4-Bit Binary/BCD Down Counter The MC14569B is a programmable divide–by–N dual 4–bit binary or BCD down counter constructed with MOS P–channel and N–channel enhancement mode devices complementary MOS in a monolithic structure.

MIL-STD-806

Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
Contextual Info: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted

MC14070B

Abstract: Mc14077b
Contextual Info: MC14070B, MC14077B CMOS SSI Quad Exclusive “OR” and “NOR” Gates The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use

TC4069 OSCILLATOR

Abstract: TC40HXXX tc4011bp applications MC14500B Industrial Control Unit cmos integrated circuits TC4069 equivalent
Contextual Info: OUTLINE 1. C 2M0S I C F a mi ly 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted

Contextual Info: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121

Voltage regulator 78L05

Abstract: BLF278 78los philips ferroxcube 4c6 4C6 toroid 2222 809 09006 capacitor film dielectric trimmer PTFE 100pf 78L05 transistor bc 245 capacitor 17 ij k 63 MKT
Contextual Info: P hilips Sem iconductors ^ 53^31 003002A TM • APX Product specification VHF push-pull power MOS transistor BLF278 AMER P H I L I P S / D I S C R E T E PIN CONFIGURATION FEATU RES • • • • b'lE High power gain Easy power control Good thermal stability

BLF177

Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
Contextual Info: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

Contextual Info: Philips Sem iconductors bt.S3R31 O O E ^ m HT5 W A P X P roduct spe cifica tion VHF power MOS transistor BLF225 — N AUER PHILIPS/DISCRETE FEATURES blE » PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.

Contextual Info: P hilips Sem iconductors bbSBIB l □ D B R T f l ci 7bS A P X ’roductspecification VHF push-pull power MOS transistor BLF246B N AUER P H IL IP S /D IS C R E T E FEATURES b^E ]> PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability

transistor smd code marking nc g

Abstract: smd diode marking code t3 smd transistor marking code 24
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH205 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -12 V

SmD TRANSISTOR SP

Abstract: transistor smd code marking nc g SP SOT23 TRANSISTOR SMD MARKING CODE 056 BSH202 TRANSISTOR SMD MARKING CODE SP
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH202 SYMBOL • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -30 V s

TRANSISTOR SMD MARKING CODE 1v

Abstract: transistor smd code marking nc g
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH207 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -12 V

TRANSISTOR SMD 019 CODE PACKAGE SOT23

Abstract: BSH201 marking BSH201 TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE X D transistor smd code marking nc g TRANSISTOR SMD MARKING CODE GFs
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH201 SYMBOL • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -60 V s

BSH203 marking

Abstract: sot23 marking BSH203 TRANSISTOR SMD MARKING CODE SP transistor smd code marking nc g BSH203 ordering information TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE UA BSH203/PLP
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH203 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -30 V

Contextual Info: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization

BLF346

Abstract: 222203038109 sot-119 MRA931
Contextual Info: P hilips S em iconductors bbsa'm DOBOOMb ‘i m I APX Product specification VHF power MOS transistor BLF346 N AMER PHIL I P S / D I S C R E T E FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

transistor tt 2222

Abstract: TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322
Contextual Info: Philips Sem iconductors [^ 5 3 ^ 3 1 0030115 121 • APX ^ ro d u c ts p e c m Ä BLF543 UHF power MOS transistor b * ìE N AMER P H I L I P S / D I S C R E T E D ' PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

Philips 2222 capacitor

Abstract: philips capacitor philips capacitor 2222
Contextual Info: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

ferroxcube 4322 020 97171

Abstract: philips ferroxcube 4c6 D1 Marking SOT123 BLF175 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322
Contextual Info: P h n ip ^ e m ic o n d u c to i^ ^ ^ ^ • b b5 3 T 31 □□2 T6 bM 4□4 WÊ A P X Product specification HF/VHF power MOS transistor BLF175 N AMER P H I L I P S / D I S C R E T E FEATURES • • • • • • PIN CONFIGURATION High power gain Low intermodulation distortion