S3R31 Search Results

BA682

Abstract: BA683
Contextual Info: blE D • bfc>S3R31 DQEblVb Dfifi N AMER PH ILI PS/DISCRETE IAPX BA682 BA683 BAND-SWITCHING DIODES FOR SURFACE MOUNTING Switching diodes in a SOD-8 O envelope, intended fo r band switching in v.h.f. television tuners. A special feature o f these diodes ¡s their low capacitance.

transistor bt 808

Abstract: transistor 1548 b
Contextual Info: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2

PMBT2369

Contextual Info: • bbS3T3i oossasi n? « N APIER PHILIPS/DISCRETE apx PMBT2222 PMBT2222A b?E D r v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended fo r switching and linear appli­ cations in thick and thin-film circuits.

Contextual Info: BD226 BD228 BD230 _ J V SILICON PLANAR EPITAXIAL POWER TRANSISTORS G eneral purpose n -p -n tra n s is to rs in a SOT-32 plastic envelope especially recommended for television c irc u its. T h eir complements a re BD227, BD229 and BD231.

Contextual Info: DISCRETE SEMICONDUCTORS PBYR20100CT series Schottky Barrier rectifier diodes Product specification File under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS ^ 53^31 □ □ 3 2 cJcj a 23s P h ilip s Sem icon du cto r? P ro d u c ts

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bb53R31 002flbi1fl S05 M A P X Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended

Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> bb53T31 □02tUb4 033 BLV95 APX U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters for the 900 MHz communication band. Features • multi base structure and emitter-ballasting resistors for an optimum temperature profile

Contextual Info: PhilipsSemiconductors ^ bb53T31 0031716 213 M APX^^^^Productspecificatlon NPN 1 GHz video transistors ^ BFQ235; BFQ235A N AMER PHILIPS/DISCRETE b'lE D — • PINNING FEATURES • High breakdown voltages DESCRIPTION PIN 1 emitter • High gain bandwidth product

S46 SMD

Contextual Info: Philips Components BDS 944/946/948 Datasheet status P ro d u ct sp ecification date of issue April 1991 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PNP silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended fo r general

Contextual Info: bRE J> N A PIER P H I L I P S / D I S C R E T E bfc.S3R31 0 Q 3 2 2 S 6 Philips Semiconductors 2 fl 2 H A P X Preliminary specification Triple video output amplifier FEATURES CR5978 QUICK REFERENCE DATA • Three amplifiers in one package • DC coupled video amplifier for

TOP 948

Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
Contextual Info: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general