P-MOSFET BSP Search Results

Contextual Info: BEE D • ¿123b32Q 00170^3 b « S I P T'3 SIPMOS P Channel MOSFET SIEMENS/ SPCL-, SEMICONDS BSP 92 _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcj = -240V • Continuous drain current / o = -0.18A • Draln-source on-resistance

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

optimos battery protection reverse

Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
Contextual Info: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

Contextual Info: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation

BC108 plastic

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 78 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–

BC237

Abstract: 2N5486 characteristics
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 80 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 80 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–

Contextual Info: 32E D • 023b32Q OGIVIOÌ b « S I P SIPMOS N Channel MOSFET BSP 295 SIEMENS/ SPCL-. SEMICONDS T -g ì-O S ' _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vis = 50V • Continuous drain current I d = 1-7A • Drain-source on-resistance

Contextual Info: 32E D • Ö23b32ü 0017107 s m s i p BSP 149 SIPMOS N Channel MOSFET T - 3 *7 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current • Drain-source on-resistance • Total power dissipation Type M arking O rdering code for

Contextual Info: BSP 92 SIPMOS P Channel MOSFET Preliminary Data • SIPMOS - enhancem ent m ode • D rain-source voltage Vfes = -240V • C ontin uou s drain current / D = -0.18A • D rain-source on-resistance ffcs on = 2 0 0 • Total pow er dissipation PD = 1.5W t Type

Contextual Info: BSP225 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)225m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)600m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)

Contextual Info: BSP171 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)6.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)-55

Contextual Info: BSP220 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)225m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)600m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)

Contextual Info: 32E D • Û23b32ü 00170=10 S H S I P SIPM O S N Channel MOSFET SIEMENS/ SPCL-, SEMICONDS T-21- é>5~ _ BSP 125 Preliminary Data • S IP M O S - enhancement mode • Drain-source voltage Vfes = 600V • Continuous drain current lB = .11OA • Drain-source on-resistance

Contextual Info: BSP 315 SIPMOS N Channel MOSFET • SIPMOS - enhancem ent m ode • D rain-source v olta ge Vbs = -50V • C ontin uou s drain current / D = -1.0A • D rain-source on-resistance • Total pow er dissipation fiosioio = .9 5 0 P,M = 1.5W Type M arking Ordering co de for

Contextual Info: BSP317 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)370m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.48 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.8 Minimum Operating Temp (øC)-55

Contextual Info: BSP316 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.8 Minimum Operating Temp (øC)-55

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y

FC00380

Abstract: optocoupler P 521 ac bridg specification 12v 50w smps TRANSISTOR BSP 2000 022Y c0035 VIPER50B TRANSISTOR 0835 FC00301
Contextual Info: VIPer50B VIPer50BSP SMPS PRIMARY I.C. TYPE VIPer50B/BSP V DSS In R DS on 400 V 3A 2.2 Ω 10 1 PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP TO 200KHZ ■ CURRENT MODE CONTROL ■ SOFT START AND SHUT DOWN CONTROL ■ AUTOMATIC BURST MODE OPERATION IN

BSP 125 equivalent

Abstract: optocoupler Iso1 TRANSISTOR BSP 2000 TRANSISTOR BSP 0835
Contextual Info: VIPer100B VIPer100BSP SMPS PRIMARY I.C. TYPE VIPer100B/BSP V DSS In R DS on 400V 6A 1.1 Ω 10 1 PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP TO 200KHZ ■ CURRENT MODE CONTROL ■ SOFT START AND SHUT DOWN CONTROL ■ AUTOMATIC BURST MODE OPERATION IN

Contextual Info: VZETIX SEMICONDUCTORS BSP75G 60V self-protected low-side IntelliFET MOSFET switch Summary Continuous drain source voltage V ds=60V On-state resistance 550m O Nominal load current 1.4A V|N = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. M onolithic over tem perature, over

BSP 75N

Abstract: BSP75N
Contextual Info: Product Brief BTS 3207N HITFET Smar t Low-Side Power Switch One Channel 500 mΩ T H E B T S 3 2 0 7 N is a one channel low-side power switch. It has an on resistance of 500 mΩ. Basic Functions B T S 3 2 0 7 N and BSP 75N are both in the 500 mΩ area. BTS 3207N is specially for cost driven applications and fits especially

Contextual Info: BEE D • Ö23b320 Q017124 2 ■ SIP SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • BSP 315 T ~ 2 * 1 'O S ' SIPMOS - enhancement mode Drain-source voltage = -50V Continuous drain current l 0 - -1.0A Draln-souros on-reslstance Ros<on> = .9 5 0