P093A Search Results

Contextual Info: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE ) s ( t c u d o ) r

P093A

Abstract: STE50DE100
Contextual Info: STE50DE100 1000 V - 50 A - 25 mΩ POWER MODULE PRELIMINARY DATA • ■ ■ ■ ■ ■ HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 1000 V ULTRA LOW CISS DRIVEN BY RG = 56Ω

BUV98AV

Contextual Info: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE ) s ( t c u d o

schematic diagram motor control

Abstract: schematic diagram motor BUV298V JESD97
Contextual Info: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance

ST 358

Abstract: isotop bipolar JESD97 STE70IE120 E70IE120
Contextual Info: STE70IE120 Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Ω Power Module Target data General features VCS ON IC RCS(ON) 1V 70A 0.014W • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance

ESM6045DV

Contextual Info: ESM6045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM6045DV

Contextual Info: ESM6045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM6045AV

Contextual Info: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

E07DE220

Abstract: JESD97 STE07DE220 FAST-SWITCH
Contextual Info: STE07DE220 Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 W power module Preliminary Data Features Table 1. VCS ON IC RCS(ON) 0.5V 7A 0.07 Ω • High voltage / high current cascode configuration ■ Ultra low equivalent on resistance

Contextual Info: ESM5045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM3045DV

Contextual Info: ESM3045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

JESD97

Abstract: STE50DE100
Contextual Info: STE50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 Ω General features VCS ON IC 1.3 V 50 A RCS(ON) 0.026 • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz

ESM4045DV

Contextual Info: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

BUV298AV

Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

SMPS IC 2003

Abstract: BUT232V DSA0047212 BUT23
Contextual Info: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

BUV298AV

Contextual Info: BUV298AV  NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

Contextual Info: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance

Contextual Info: BUT30V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: BUF460AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE

industrial welding diagram

Contextual Info: STE50DE100 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.025 Ω POWER MODULE PRELIMINARY DATA • ■ ■ ■ V CS ON IC R CS(ON) 1V 40 A 0.025 Ω LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 1000 V

ESM5045DV

Abstract: SCHEMATIC smps
Contextual Info: ESM5045DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE •

ESM2030DV

Contextual Info: ESM2030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

BUT23

Contextual Info: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE ) s ( ct

Contextual Info: BUV98V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS