P2400F Search Results

KM29N040T

Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Contextual Info: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective

Contextual Info: t eccor e l e c t r o n i c s i n c \ •is dooiis? 3 5T|flä7aön r - i t - 2,3 S I A M C ? !# !! - The New Standard I If your electronic equipment is being protected by zener diodes, gas discharge tubes, MOV’s or other types of protectors, you are taking un­

Contextual Info: F re îir'in & y KM681002B/BL, KM681002BI/BLI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»» Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) (C M O S): 10* (Max.) 1* (Max.) - L-Ver. only

Contextual Info: KM616V1002C/CL, KM616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Prelim inary Rev. 1.0

Contextual Info: CMOS SRAM KM6161002C/CL, KM6161002CI/CLI lin û iû t TB’f I o 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics

Contextual Info: Preliminary CMOS SRAM KM68S4000C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark June 15, 1998 Prelim inary The attached datasheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

A17-A22

Contextual Info: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase

Contextual Info: KM68V1002A/AL CMOS S RAM ELECTRONICS 1 2 8 K x 8 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly

29V640

Contextual Info: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

Contextual Info: Preliminary CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64K x16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCTOPTION • • • • The KM 616V1000B and KM616U1 OOOB fam ily is febricated by SAM SUNG'S advanced CM OS process technology. The fam ily

Contextual Info: PRELIMINARY CMOS SRAM KM6161002C/CL, KM6161002CI/CLI iin c k n t T b’f I o 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics

Contextual Info: Preliminary CMOS SRAM KM64V1003B/BL, KM64V1003BI/BLI Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark

Contextual Info: KM681 002B, K M 6 8 1 0 0 2 B I CMOS SRAM D o cu m e n t Title 1 2 8 K x 8 Bi t Hi gh S p e e d S t a t i c R A M 5 V O p e r a t i n g , R e v o l u t i o n a r y Pi n out . O p e ra te d at C o m m e r c i a l and Industrial T e m p e r a t u r e R a n g e .

KXJ b1

Abstract: KM6161002C KM6161002CJ KM6161002CT 44so
Contextual Info: CMOS SRAM KM6161002C/CL, KM6161002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics

AL15

Contextual Info: KM68V1002A/AL CMOS SRAM ELECTRONICS 1 2 8 K x 8 B i t H igh-Speed C M O S Static R A M 3 .3 V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) Q.5mA(Max.) ; L-veronly

Contextual Info: KM6161002A, KM6161002AI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Draft Data Remark Rev. No. History Rev. 0.0 Initial release with Preliminary.

Contextual Info: % Pro'rjn'rc:^/- KM644002B, KM644002BI CMOSSRAM 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 10,12,15* • (Max.) - Low Power Dissipation Standby (TTL) : 40* • (Max.) (CM O S): 10» »(Max.) Operating KM644002B -1 0 : 190*»(Max.)

Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15th 1996 Advance 0.1 Revise - Erase 100ns part from KM 616FS1000 Family

Contextual Info: Preliminary KM616V4002C/CL, KM616V4002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary.

Contextual Info: KM641003A, KM641003AI CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: KM616V1002A/AL, KM616V1002AI/ALI CMOS SRAM Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: KM64V1003A/AL, KM64V1003AI/ALI CMOS SRAM Document Title 256Kx4 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History R e v . No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: KM29 V32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte