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    P2400F Price and Stock

    KOA Speer Electronics Inc RK73H1ETTP2400F

    RES 240 OHM 1% 1/10W 0402
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    DigiKey RK73H1ETTP2400F Digi-Reel 209,352 1
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    RK73H1ETTP2400F Cut Tape 209,352 1
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    RK73H1ETTP2400F Reel 200,000 10,000
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    Mouser Electronics RK73H1ETTP2400F 265,100
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    Newark RK73H1ETTP2400F Cut Tape 1,251,879 10
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    Bristol Electronics RK73H1ETTP2400F 609,395 296
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    RK73H1ETTP2400F 3,674
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    TTI RK73H1ETTP2400F Reel 1,350,000 10,000
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    KOA Speer Electronics Inc RK73H1ERTTP2400F

    RES 240 OHM 1% 1/10W 0402
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    DigiKey RK73H1ERTTP2400F Digi-Reel 21,250 1
    • 1 $0.14
    • 10 $0.069
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    RK73H1ERTTP2400F Cut Tape 21,250 1
    • 1 $0.14
    • 10 $0.069
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    RK73H1ERTTP2400F Reel 10,000 10,000
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    Mouser Electronics RK73H1ERTTP2400F 16,220
    • 1 $0.13
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    TTI RK73H1ERTTP2400F Reel 10,000
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    KOA Speer Electronics Inc RK73G1ETTP2400F

    RES 240 OHM 1% 1/10W 0402
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    DigiKey RK73G1ETTP2400F Digi-Reel 1,000
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    RK73G1ETTP2400F Cut Tape 1,000
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    RK73G1ETTP2400F Reel 10,000
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    Mouser Electronics RK73G1ETTP2400F
    • 1 $0.26
    • 10 $0.223
    • 100 $0.087
    • 1000 $0.037
    • 10000 $0.028
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    KOA Speer Electronics Inc RN73H1ETTP2400F50

    RES 240 OHM 1% 1/16W 0402
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    DigiKey RN73H1ETTP2400F50 Digi-Reel 1,000
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    KOA Speer Electronics Inc RN73R1ETTP2400F25

    RES 240 OHM 1% 1/16W 0402
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    DigiKey RN73R1ETTP2400F25 Cut Tape 1,000
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    RN73R1ETTP2400F25 Digi-Reel 1,000
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    RN73R1ETTP2400F25 Reel 10,000
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    Find more P2400F price and stock on Findchips.com

    P2400F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM29N040T

    Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
    Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective


    OCR Scan     		PDF KM29N040T 512Kx8 500us 400mil/0 KM29N040T 512Kx8bit KM29N040 KM29N040T) 7TL4142 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping

    Untitled

    Abstract: No abstract text available
    Text: t eccor e l e c t r o n i c s i n c \ •is dooiis? 3 5T|flä7aön r - i t - 2,3 S I A M C ? !# !! - The New Standard I If your electronic equipment is being protected by zener diodes, gas discharge tubes, MOV’s or other types of protectors, you are taking un­


    OCR Scan     		PDF O-218 O-202 O-202 O-220 BR601

    Untitled

    Abstract: No abstract text available
    Text: F re îir'in & y KM681002B/BL, KM681002BI/BLI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»» Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) (C M O S): 10* (Max.) 1* (Max.) - L-Ver. only


    OCR Scan     		PDF KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO 32-SO J-300

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002C/CL, KM616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Prelim inary Rev. 1.0


    OCR Scan     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 48-fine

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6161002C/CL, KM6161002CI/CLI lin û iû t TB’f I o 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics


    OCR Scan     		PDF KM6161002C/CL, KM6161002CI/CLI 64Kx16 48-fine 6161002CZ 6161002CF rese02CI/CLI

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68S4000C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark June 15, 1998 Prelim inary The attached datasheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right


    OCR Scan     		PDF KM68S4000C 512Kx8 512Kx8

    A17-A22

    Abstract: No abstract text available
    Text: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase


    OCR Scan     		PDF KM29V64000TS/RS 200us KM29V64000 P2-400F 10max] -TSOP2-400R A17-A22

    Untitled

    Abstract: No abstract text available
    Text: KM68V1002A/AL CMOS S RAM ELECTRONICS 1 2 8 K x 8 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly


    OCR Scan     		PDF KM68V1002A/AL KM68V1002A/AL-12 KM68V1002A/AL-15 KM68V1002A/AL-17 KM68V1002A/AL-20 KM68V1002AJ/ALJ 32-SOJ-4Ã KM68V1002AT/ALT004 32-TSO P2-400F

    29V640

    Abstract: No abstract text available
    Text: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte


    OCR Scan     		PDF 200us KM29V64000R 0D31BÃ 29V640

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM6164002B, KM6164002BI 256Kx16 44-SOJ-400 44-TSO P2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64K x16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCTOPTION • • • • The KM 616V1000B and KM616U1 OOOB fam ily is febricated by SAM SUNG'S advanced CM OS process technology. The fam ily


    OCR Scan     		PDF KM616V1000B, KM616U1000B KM616V1OOOB 616U1000B 44-TSQ P2-400F/R 616V1000B KM616U1 KM61SV1000B KM616U10008

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM6161002C/CL, KM6161002CI/CLI iin c k n t T b’f I o 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics


    OCR Scan     		PDF KM6161002C/CL, KM6161002CI/CLI 64Kx16 48-fine

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM64V1003B/BL, KM64V1003BI/BLI Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark


    OCR Scan     		PDF KM64V1003B/BL, KM64V1003BI/BLI 256Kx4 32-SO J-400 32-TSO P2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM681 002B, K M 6 8 1 0 0 2 B I CMOS SRAM D o cu m e n t Title 1 2 8 K x 8 Bi t Hi gh S p e e d S t a t i c R A M 5 V O p e r a t i n g , R e v o l u t i o n a r y Pi n out . O p e ra te d at C o m m e r c i a l and Industrial T e m p e r a t u r e R a n g e .


    OCR Scan     		PDF KM681 32-SO J-400 32-TSO P2-400F

    KXJ b1

    Abstract: KM6161002C KM6161002CJ KM6161002CT 44so
    Text: CMOS SRAM KM6161002C/CL, KM6161002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics


    OCR Scan     		PDF KM6161002C/CL, KM6161002CI/CLI 64Kx16 48-fine KM6161002CZ KM6161002CF spe1002CI/CLI KXJ b1 KM6161002C KM6161002CJ KM6161002CT 44so

    AL15

    Abstract: No abstract text available
    Text: KM68V1002A/AL CMOS SRAM ELECTRONICS 1 2 8 K x 8 B i t H igh-Speed C M O S Static R A M 3 .3 V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) Q.5mA(Max.) ; L-veronly


    OCR Scan     		PDF KM68V1002A/AL 128Kx KM68V1002A/AL-12 KM68V1002A/AL-15 KM68V1002A/AL-17 KM68V1002A/AL-20 KM68V1002AJ/ALJ 32-SOJ-400 KM68V1002AT/ALT 32-TSOP2-4QOF AL15

    Untitled

    Abstract: No abstract text available
    Text: KM6161002A, KM6161002AI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Draft Data Remark Rev. No. History Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		PDF KM6161002A, KM6161002AI 64Kx16 12/15/17/20ns 220/210/200/190mA 190/185/185/180mA 44-SO

    Untitled

    Abstract: No abstract text available
    Text: % Pro'rjn'rc:^/- KM644002B, KM644002BI CMOSSRAM 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 10,12,15* • (Max.) - Low Power Dissipation Standby (TTL) : 40* • (Max.) (CM O S): 10» »(Max.) Operating KM644002B -1 0 : 190*»(Max.)


    OCR Scan     		PDF KM644002B, KM644002BI KM644002B 304-bit J-400 32-TSO

    Untitled

    Abstract: No abstract text available
    Text: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15th 1996 Advance 0.1 Revise - Erase 100ns part from KM 616FS1000 Family


    OCR Scan     		PDF KM616FV1000, KM616FS1000, KM616FR1000 100ns 616FS1000 150ns 32-sTSOP1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM616V4002C/CL, KM616V4002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		PDF KM616V4002C/CL, KM616V4002CI/CLI 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: KM641003A, KM641003AI CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		PDF KM641003A, KM641003AI 256Kx4 12/15/17/20ns 200/190/180/170mA 150/145/145/140mA 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL, KM616V1002AI/ALI CMOS SRAM Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002A/AL, KM616V1002AI/ALI 64Kx16 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA June-1997

    Untitled

    Abstract: No abstract text available
    Text: KM64V1003A/AL, KM64V1003AI/ALI CMOS SRAM Document Title 256Kx4 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History R e v . No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM64V1003A/AL, KM64V1003AI/ALI 256Kx4 12/15/17/20ns 160/155/150/145mA 130/125/125/120mA 32-SO

    Untitled

    Abstract: No abstract text available
    Text: KM29 V32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte


    OCR Scan     		PDF V32000T 250us KM29V32000T) 003iA