P2503 Search Results

P2503BDG

Abstract: P2503BD nikos EQUIVALENT* P2503 P2503 niko-sem
Contextual Info: NIKO-SEM P2503BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 12A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P2503NVG

Abstract: SEM 2004 P2503 P2503N P2503NV Field Effect Transistor nikos EQUIVALENT* P2503 Niko Semiconductor SOP-8
Contextual Info: NIKO-SEM P2503NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 25mΩ 7A P-Channel -30 45mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

P2503HVG

Abstract: P2503 niko-sem
Contextual Info: NIKO-SEM P2503HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P2503

Contextual Info: Dual N-channel MOSFET ELM34808AA-N •General description ■Features ELM34808AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Contextual Info: Single N-channel MOSFET ELM32404LA-S •General description ■Features ELM32404LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)

P2503

Abstract: P2503HVG
Contextual Info: デュアルパワー N チャンネル MOSFET ELM34808AA-N •概要 ■特長 ELM34808AA-N は低入力容量 低電圧駆動、 低 オン抵抗という特性を備えた大電流デュアルパワー ・ Vds=30V ・ Id=7A MOSFET です。 ・ Rds on < 25mΩ (Vgs=10V)

P2503

Contextual Info: Single N-channel MOSFET ELM32404LA-S •General description ■Features ELM32404LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)

ELM32404LA

Contextual Info: 单 N 沟道 MOSFET ELM32404LA-S •概要 ■特点 ELM32404LA-S 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=12A ·Rds on < 25mΩ (Vgs=10V) ·Rds(on) < 37mΩ (Vgs=4.5V) ■绝对最大额定值 项目

p2003bdg

Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
Contextual Info: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been

P2503

Contextual Info: □RAWING No,i- P25-XX21 SHEET 2 OF 2 PROBE H E A D IF IN DOUBT - ASK 5' 0 LUG 01,80 - 01,9 5- HARWIN PAR T NO, HARWIN PART NO, P25-1021 - 2 20 , NOT TO S C A L E 2 £ 2 THIRD ANGLE PROJECTION A L L DIMENSIONS IN mm V A R IA N T S NOTES: 1, TO BE OSEPl W ITH S L E E V E S S 2 5 -X X 1 ,

P2503ND5G

Contextual Info: Complementary MOSFET ELM35602KA-S •General Description ■Features ELM35602KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V)

P2503

Contextual Info: Dual N-channel MOSFET ELM34808AA-N •General description ■Features ELM34808AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)

ELM34808AA

Contextual Info: 双 N 沟道 MOSFET ELM34808AA-N •概要 ■特点 ELM34808AA-N 是 N 沟道低输入电容低工作电压、 •Vds=30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=7A ·Rds on < 25mΩ (Vgs=10V) ·Rds(on) < 37mΩ (Vgs=4.5V) ■绝对最大额定值

Contextual Info: シングル N チャンネル MOSFET ELM32404LA-S •概要 ■特長 ELM32404LA-S は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=12A ・ Rds on < 25mΩ (Vgs=10V) ・ Rds(on) < 37mΩ (Vgs=4.5V)

P2504

Abstract: P2503 P1210 P1103 P2103 P1504 P150CK-360 P2506 p1505 P1214
Contextual Info: For a wide variety of MICROWAVE COMPONENTS Master Card PHASE SHIFTERS Mechanical Adjustment with Screw Driver Shaft and Lock For Digital Counting Dial add “D” suffix to the Model Number Phase Shift is linear with frequency and continuously variable. Standard Size