P35421 Search Results

MCL 25

Abstract: NN12 P35-4211-0 P35-4211-1
Contextual Info: P35-4211-1 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Low cost SO8 plastic package 0.6dB typ at 1GHz Description The P35-4211-1 is a high performance Gallium Arsenide monolithic single pole double throw RF switch,

GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

Abstract: NN12 P35-4215-0 P35-4215-1R P35-4215-1T
Contextual Info: P35-4215-0 GaAs MMIC SPDT REFLECTIVE/NON-REFLECTIVE SWITCH, DC - 4GHz Features • • Broadband performance Low insertion loss; 0.5dB typ at 2GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical • Chip form Description The P35-4215-0 is a high performance Gallium Arsenide single pole double throw broadband RF switch

Contextual Info: FEATURES MODEL NO. P35-4215-0 • DC - 4 G H z Frequency Range tx T ■ 3 nSec Switching Speed ■ Low Insertion Loss GaAs MMIC SP2T ■ Ultra Low DC Power Consumption ■ On-Chip Terminating Resistors ■ See DS0702 For Plastic Packaged Version BOND PAD CONFIGURATION

P35-4211-0

Abstract: NN12 P35-4211-1
Contextual Info: P35-4211-0 Marconi Optical Components GaAs MMIC SPDT Reflective Switch, DC - 3GHz Features • · · · · Broadband performance Low insertion loss; 0.5dB typ at 1GHz Ultra low DC power consumption Fast switching speed; 3ns typical Chip form Description The P35-4211-0 is a high performance Gallium Arsenide monolithic single pole double throw RF switch, suitable for use in

Contextual Info: FEATURES MODEL NO. P35-4211-0 • DC - 2 GHz Frequency Range ■ 3 nSec Switching Speed ■ Ultra Low DC Power Consumption GaAs MMIC SP2T ■ Low Cost ■ Small Chip Size .019 x .022 in. ■ Plastic Package Available-P/N P35-4211-1 BOND PAD CONFIGURATION MMIC

BA501

Abstract: P35-4210 P35-4210-0
Contextual Info: - MA R C O N I MTL S LTD 25 D • 37bflSQl □□□□□55 3 ■G M L p ^ E S S E Y t - $ / - / / Three Five Product information 'i i/o " 1 GaAs M M IC RF Switch P35-4210 2GHz S P D T/S P S T Applications • RF Switch to 1000M H z in T05 package 2 0 0 0 MHz in chip form

NN12

Abstract: P35-4211-0 P35-4211-1 AA0V
Contextual Info: Data sheet GaAs MMIC SPDT Reflective Switch, DC - 3GHz Features • Broadband performance • Low insertion loss; 0.6dB typ at 1GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical The P35-4211-1 is a high performance Gallium Arsenide

Contextual Info: DAICO I N D U S T R I E S INC blE D • EtiOMT20 0 0 0 1 5 2 4 ^2=1 ■ DAI FEATUR ES ■jjS ; tX f ■ DC - 4 GHz Frequency Range ■ 3 nSec Switching Speed ■ Low Insertion Loss ■ Ultra Low DC Power Consumption MODEL NO. P35-4215-0 G*AsMMICSP2T ■ On-Chip Terminating Resistors

NN12

Abstract: P35-4215-1R
Contextual Info: P35-4215-1R Marconi Optical Components GaAs MMIC SPDT Reflective Switch, DC - 4GHz Features • · · · · Broadband performance Low insertion loss; 0.5dB typ at 2GHz Ultra low DC power consumption Fast switching speed; 3ns typical Surface mount package Description

MCL 29

Abstract: NN12 P35-4211-0 P35-4211-1
Contextual Info: P35-4211-0 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • Low insertion loss; 0.5dB typ at 1GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical • Chip form Description The P35-4211-0 is a high performance Gallium Arsenide monolithic single pole double throw RF switch,

S19944DY

Abstract: SV240
Contextual Info: Tem ic SÌ9944DY Siliconix Dual N-Channel Enhancement-Mode MOSFET Product Summary I d A 240 ±0.4 8 @ VGS = 4.5 V ±0.3 u S O -8 u D2 o jf Top View D2 LITTLE FOOT rDS(on) (S3) 6 @ VGS = 10 V V d s (V) G2 O Ô Si S2 N-Channel M OSFET N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Q002

Abstract: P35-4211 P35-4211-0
Contextual Info: & FEATURES • DC - 2 GHz Frequency Range ■ 3 nSec Switching Speed ■ Ultra Low DC Power Consumption MODEL NO. P35-4211-0 GaAs MMIC SP2T ■ Low Cost ■ Small Chip Size .019 x .022 in. ■ Plastic Package Available-P/N P35-4211-1 -O RF1 BOND PAD CONFIGURATION

NN12

Abstract: P35-4215-0 P35-4215-000-200
Contextual Info: Data sheet MMIC SPDT Reflective/Non-Reflective Switch, DC - 4GHz Features • Broadband performance • Low insertion loss; 0.5dB typ at 2GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical The P35-4215-000-200 is a high performance Gallium

NN12

Abstract: P35-4211-0 P35-4227-0
Contextual Info: P35-4227-0 GaAs MMIC SPDT REFLECTIVE/TERMINATED SWITCH, DC - 6GHz Features • • Broadband performance High Isolation; 40dB typ at 3GHz • Low insertion loss; 0.8dB typ at 3GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical Description

GaAs MESFET

Abstract: P35421 p354101 P35-4252
Contextual Info: GaAs Monolithic Microwave Integrated Circuits • Amplifiers • Switches T W , ' isV.'r, 1 _j P Lm airMRtl] P •: » DAICO INDUSTRIES GaAs MMIC’s SPECIFICATION TABLE Spec Freq GHz Part Number Gain dB Typ VSWR TYP Output Power dBm Noise Figure +13 +22 +22

P35-4215-0

Contextual Info: FEA TU RES • DC - 4 GHz Frequency Range ■ 3 nSec Switching Speed ■ Low Insertion Loss ■ Ultra Low DC Power Consumption ■ On-Chip Terminating Resistors ■ See DS0702 For Plastic Packaged Version MODEL NO. P35-4215-0 & GaAs MMIC SP2T BO N D PAD CONFIGURATION

NN12

Abstract: P35-4215-1R
Contextual Info: P35-4215-1R GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 4GHz P35 4215-1R Features • Broadband performance • Low insertion loss; • Ultra low DC power consumption • Fast switching speed; 3ns typical 0.5dB typ at 2GHz • Surface mount package Description

Contextual Info: P35-4215 Features • • • • • • Broadband performance Low insertion loss Ultra low DC power consumption On-chip terminating resistors Fast switching speed, 3ns typical Available in chip form or surface mount package DC to 4GHz SPDT reflective/non-reflective

NN12

Abstract: P35-4215-1T
Contextual Info: P35-4215-1T Marconi Optical Components GaAs MMIC SPDT Terminated Switch, DC - 4GHz Features • · · · · · Broadband performance Low insertion loss; 0.6dB typ at 2GHz Ultra low DC power consumption Fast switching speed; 3ns typical Surface mount package

P35-4210-0

Abstract: P35-4210 T05 Package
Contextual Info: P35-4210 Applications • R.F. switch to 1000MHz in T05 package 2000MHz in chip form • Ideal for PIN switch replacement where minimal current is required typically < 10jJ.A • Fast switching speeds ( < Ins) with driver waveform enhancement • Low loss signal routing

Contextual Info: FEATURES DAICO INDUSTRIES, INC. VOLUME 4 • ISSUE #3 • DC - 2 GHz Frequency Range ■ 3 nSec Switching Speed GaAs MMIC SWITCHES I ■ Ultra Low DC Power Consumption In This Issue: 1 P35-4211-0 2 P35-4215-0 ■ Low Cost ■ Small Chip Size .019 x .022 in.

Contextual Info: & FEATURES • DC - 4 GHz Frequency Range ■ 3 nSec Switching Speed ■ Low Insertion Loss MODEL NO. P35-4215-0 GaAs MMIC SP2T ■ Ultra Low DC Power Consumption ■ On-Chip Terminating Resistors ■ See DS0702 For Plastic Packaged Version BOND PAD CONFIGURATION

NN12

Abstract: P35-4215-0 P35-4215-1R P35-4215-1T
Contextual Info: P35-4215-0 Marconi Optical Components GaAs MMIC SPDT Reflective/Non-Reflective Switch, DC - 4GHz Features • · · · · Broadband performance Low insertion loss; 0.5dB typ at 2GHz Ultra low DC power consumption Fast switching speed; 3ns typical Chip form

NN12

Abstract: P35-4211-000-200 P35-4211-1
Contextual Info: Data sheet MMIC SPDT Reflective Switch, DC - 3GHz The P35-4211-000-200 is a high performance Gallium Arsenide monolithic single pole double throw RF switch, suitable for use in broadband communications and instrumentation applications. An open circuit reflective