P5504 Search Results

nikos

Abstract: P5504ED nikos transistor P5504 niko-sem NIKOS Field Effect Transistor p-Channel Logic Level Enhancement Mode field effect transistor "Field Effect Transistor" 32uaa
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P5504ED Mode Field Effect Transistor Preliminary TO-252 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 55mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P5504EDG

Abstract: P5504EDG equivalent NIKO-SEM P5504EDG p5504edg Niko-Sem TO-252 P5504 nikosem niko-sem
Contextual Info: NIKO-SEM P5504EDG P-Channel Logic Level Enhancement TO-252 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -40V 55mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P5504EVG

Abstract: niko-sem
Contextual Info: NIKO-SEM P5504EVG P-Channel Logic Level Enhancement SOP-8 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -40V 55mΩ -5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P5504EDG

Contextual Info: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

transistor 123 DL

Contextual Info: Single P-channel MOSFET ELM34405AA-N •General description ■Features ELM34405AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-5.5A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)

Contextual Info: PTC THERMISTORS DATA SHEET P693 for Over-Current Protection operating mode when the fault is removed. Select a part from our Standard Over-Current Protectors or contact ATP engineering to design a PTC to meet your specific application requirements. Positive Temperature Coefficient thermistors are

p2003bdg

Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
Contextual Info: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been

Contextual Info: PTC THERMISTORS DATA SHEET P300 for Over-Current Protection ADVANCED THERMAL PRODUCTS, INC. Positive Temperature Coefficient thermistors are used in a wide variety of applications to protect sensitive components against Over-Current conditions. The PTC is unique in its ability to limit excess current during fault

P6010D120X700F

Abstract: P6006 P2010D120X102F P3006C120X201F P5510D120X101F P5504A120X100F P3006C speaker protector P4004A120X200F P3510D120X251F
Contextual Info: PTC Thermistor Over-Current Protectors ADVANCED THERMAL PRODUCTS, Inc. Positive Temperature Coefficient thermistors are used in a wide variety of applications to protect sensitive components against Over-Current conditions. The PTC is unique in its ability to limit excess current during fault

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

Contextual Info: Over-Current Protectors Positive Temperature Coefficient thermistors are used in a wide variety of applications to protect sensitive components against Over-Current conditions. The PTC is unique in its ability to limit excess current during fault conditions, and then automatically reset to a normal

Contextual Info: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

ELM34405AA

Contextual Info: 单 P 沟道 MOSFET ELM34405AA-N •概要 ■特点 ELM34405AA-N 是 P 沟道低输入电容，低工作电 •Vds=-40V 压，低导通电阻的大电流 MOSFET。 ·Id=-5.5A ·Rds on < 55mΩ (Vgs=-10V) ·Rds(on) < 94mΩ (Vgs=-4.5V) ■绝对最大额定值

Contextual Info: シングル P チャンネル MOSFET ELM34405AA-N •概要 ■特長 ELM34405AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-5.5A ・ Rds on < 55mΩ (Vgs=-10V) ・ Rds(on) < 94mΩ (Vgs=-4.5V)

ELM32403LA

Contextual Info: 单 P 沟道 MOSFET ELM32403LA-S •概要 ■特点 ELM32403LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-40V ·Id=-8A ·Rds on < 55mΩ (Vgs=-10V) ·Rds(on) < 94mΩ (Vgs=-4.5V) ■绝对最大额定值

Contextual Info: シングル P チャンネル MOSFET ELM32403LA-S •概要 ■特長 ELM32403LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-8A ・ Rds on < 55mΩ (Vgs=-10V) ・ Rds(on) < 94mΩ (Vgs=-4.5V)