P5806NVG Search Results

SEM 2004

Abstract: P5806NVG
Contextual Info: P5806NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 60 58mΩ 4.5A P-Channel -60 90mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

Contextual Info: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)

Contextual Info: コンプリメンタリーパワー MOSFET ELM34608AA-N •概要 ■特長 ELM34608AA－N は 低 入 力 容 N チャンネル P チャンネル 量 低電圧駆動、 低オン抵抗とい ・ Vds=60V う特性を備えた大電流 MOSFET ・ Id=4.5A

复合

Abstract: ELM34608AA
Contextual Info: 复合沟道 MOSFET ELM34608AA-N •概要 ■特点 ELM34608AA-N 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=60V P 沟道 ·Vds=-60V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=4.5A ·Id=-3.5A

Contextual Info: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG