P8006EVG Search Results

P8006EVG Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
P8006EVG		Niko Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF	299.83KB	5
P8006EVG		Niko Semiconductor	P-Channel Logic Level Enhancement FET	Original	PDF	299.83KB	5

P8006EVG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NIKO-SEM Abstract: P8006EVG Contextual Info: NIKO-SEM P8006EVG P-Channel Logic Level Enhancement SOP-8 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -55V 80mΩ -4.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P8006EVG SEP-30-2004 NIKO-SEM P8006EVG	PDF
Contextual Info: Single P-channel MOSFET ELM34403AA-N •General description ■Features ELM34403AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-55V Id=-4.5A Rds(on) < 80mΩ (Vgs=-10V) Rds(on) < 150mΩ (Vgs=-4.5V)	Original	ELM34403AA-N ELM34403AA-N P8006EVG SEP-30-2004	PDF
ELM34403AA Contextual Info: 单 P 沟道 MOSFET ELM34403AA-N •概要 ■特点 ELM34403AA-N 是 P 沟道低输入电容，低工作电 •Vds=-55V 压，低导通电阻的大电流 MOSFET。 ·Id=-4.5A ·Rds on < 80mΩ (Vgs=-10V) ·Rds(on) < 150mΩ (Vgs=-4.5V) ■绝对最大额定值	Original	ELM34403AA-N SEP-30-2004 P8006EVG ELM34403AA	PDF
Contextual Info: シングル P チャンネル MOSFET ELM34403AA-N •概要 ■特長 ELM34403AA-N は低入力容量低電圧駆動、低・ Vds=-55V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=-4.5A ・ Rds on < 80mΩ (Vgs=-10V) ・ Rds(on) < 150mΩ (Vgs=-4.5V)	Original	ELM34403AA-N P8006EVG SEP-30-2004	PDF
Contextual Info: Single P-channel MOSFET ELM34403AA-N •General description ■Features ELM34403AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-55V Id=-4.5A Rds(on) < 80mΩ (Vgs=-10V) Rds(on) < 150mΩ (Vgs=-4.5V)	Original	ELM34403AA-N ELM34403AA-N P8006EVG SEP-30-2004	PDF