PA2801 Search Results
PA2801 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PA2801Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2801 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are |
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PA2801 PA2801 | |
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: r i V1.1 SYM A A DISCRETION DATE REVISIONS APPROVED SYM A A SPECIFICATION CURRENT RATING : 1 A INSULATOR RESISTANCE: 5000MG MIN. DIELECTRIC WITHSTANDING : AC 500V. OPERATING TEMPERATURE: - 4 0 -C ~ +105’C. CONTACT MATERIAL : BRASS INSULATOR MATERIAL : STANDARD : P.B.T |
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PHa021 -Pa0201G a021-Pa0301G a021-Pa0401G a021-Pa0501G a021-Pa0601G a021-Pa0701G a021-Pa0801G a021-Pa0901G PHa021 | |
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |