PA2806 Search Results
PA2806 Price and Stock
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Rochester Electronics LLC UPA2806T1L-E1-AYN-CHANNEL POWER MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UPA2806T1L-E1-AY | Bulk | 33,000 | 226 |
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Renesas Electronics Corporation UPA2806T1L-E1-AYPower Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UPA2806T1L-E1-AY | 33,000 | 1 |
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Buy Now | ||||||
PA2806 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Data Sheet PA2806 R07DS0008EJ0100 Rev.1.00 June 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS on 1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) |
Original |
PA2806 R07DS0008EJ0100 PA2806 PA2806T1L-E1-AY PA2806T1L-E2-AY | |
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Contextual Info: Preliminary Data Sheet PA2806 R07DS0008EJ0100 Rev.1.00 June 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS on 1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) |
Original |
PA2806 R07DS0008EJ0100 PA2806 PA2806T1L-E1-AY PA2806T1L-E2-AY |