PA50 Search Results

SC-95

Contextual Info: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA508TE is a switching device, which can be driven

SSOP24-150-0

Contextual Info: 95180 PA5026 16-Bit Constant Current LED Sink Driver AN ALOG PRODU CT S DI V I SI ON DESCRIPTION FEATURES PA5026 contains a serial buffer and data latches which convert serial input data into parallel output format. At PA5026 output stage, sixteen regulated

MOSFET 546

Abstract: 500 watts amplifier PA50A RS COMPONENTS AMPLIFIER KITS MO-127 PA50
Contextual Info: POWER OPERATIONAL AMPLIFIERS PA50 • PA50A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs

apex 500 watts amplifier

Abstract: apex pa50
Contextual Info: PA50PA50 • PA50A • PA50A PA50, PA50A Power Operational Amplifier FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs • OPTIONAL BOOST VOLTAGE INPUTS APPLICATIONS • SEMI-CONDUCTOR TESTING

Contextual Info: H i g h - R e l ia b i l it y A S I C s PA50000 Series These data sheets are provided fo r technical guidance only. The final device performance may vary depending upon the final device design and configuration. Silicon-Gate CMOS Logic Arrays Features: • Silicon-gate 3-m icron CMOS technology

4051M

Abstract: SC-95
Contextual Info: データ・シート ショットキバリア・ダイオード内蔵 MOS 形電界効果トランジスタ MOS FET with Schottky Barrier Diode µ PA508TE ショットキバリア・ダイオード内蔵 N チャネル MOS FET スイッチング用 µ PA508TE は，2.5 V 電源系による直接駆動が可能なス

NEC k 1995 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR µ PA506T NPN/PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQENCY GENERAL PURPOSE AMPLIFIER The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

PA95 37

Abstract: PA21A PA08V MP39 PA52A PA13
Contextual Info: 50 W PA50A 40 PA50 PA33 SA13 W SA03 PA05 PA52A ^ ^ 30 20 y PA03 PA52 SA14 SA04 % f PA04 BC20 y y sm V SA01 15 ^SA12 PA13/?Ha12A SA16 .SA06 PA51 4 * 4 * 4 * 4 à MP39 W W W FRD9 10 PA02 PA01 „ 4 3.5 3 ^ PA51APA61 R H n SA60 PA13 bU U PA12 PA1fi SA50 P^ 10

PBV-R025-1

Abstract: pbv-r100 pbvr100 546-APEX
Contextual Info: APEX V EVALUATION KIT FOR PA50/PA52 POWER OPERATIONAL AMPLIFIERS m i c r o t e c i n o l o g v EK27 H T T P : / / W W W . A P EX M I C R 0 T E C H . C0 M 800 546-APEX INTRODUCTION ASSEMBLY This easy-to-use kit provides a platform for the evaluation of linear power amplifiers circuits using the PA50/PA52 pin out. With

SSOP-24-225-0

Contextual Info: PA5030 16-CHANNEL CONSTANT CURRENT LED DRIVER WITH PWM FEATURES * 16-channel constant output, each has 4096 grayscale control 12 bit PWM * Output constant current: 2 - 90mA * Current accuracy (All output ON) SSOP-24-225-0.635 Between BITS <±3% Between IC’s <±6%

hz nec

Abstract: SC-95 UPA507TE
Contextual Info: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven

ITT 7400

Contextual Info: HARRIS SEfUCOND SECTOR 43ÜS271 DQ2h3Sb =1 « H A S 37E D - High-Reliability ASICs PA50000 Series These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration.

PA503T

Abstract: ESI-60 AE 1000-SS icnc sk 1061 PA502T SA-A DAX 3S
Contextual Info: MOS M O S Field Effect T ran sistor //PA 502T N MOS F E T Lfz 5 ^PA502T li, M O S F E T £ 2 U S ;!ï< L 7 t P i ± , > ftBEH 2 IUS&) f i l I mm) h c o H f iM t c * ic i t . ¡ft (5 o . i 6 IS :; -“ à3! ! " ^=5 it '-t-y'r-istm t-y-'f XcO'<-y'r-J d

18 pin Dual alphanumeric, 16 segment display

Abstract: PA50-IMD-R12 LED Clock Display 17 pin PA50-IMD-O12 Alphanumeric 14 SEGMENT DUAL Intelligent Display 15 pin Dual alphanumeric, 16 segment display 12 PIN 3.5 DIGIT LED DISPLAY red led 24 pin 4 digit 7 segment display PA50-IMD-G13 PA50-IMD-R24
Contextual Info: www.p-tec.net sales@p-tec.net Tel: Fax: 719 589 3122 (719) 589 3592 PA50 Dual Digit Alphanumeric Intelligent Display 0.54” Features Absolute Maximum Ratings at TA = 25 °C *Built-in Driver 5450 MOS *IC with Series Data Input, 35 Bit Shift Register, 34 LED Driver Output

Contextual Info: PA50PA50 • PA50A • PA50A P r o d u c t PA50A Innnnoovvaa t i o n FFr roomm PA50, Power Operational Amplifier FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs • OPTIONAL BOOST VOLTAGE INPUTS

Contextual Info: PA50PA50 • PA50A • PA50A PA50, PA50A Power Operational Amplifier FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs • OPTIONAL BOOST VOLTAGE INPUTS APPLICATIONS • SEMI-CONDUCTOR TESTING

2SK1001

Abstract: 2SC1623
Contextual Info: データ・シート µ PA509TA NPN エピタキシャルプレーナ形シリコントランジスタ N チャネル接合型シリコン電界効果トランジスタ 高周波増幅AM 増幅、低周波増幅用 特 外形図（単位：mm） 徴 ○J-FET と NPN トランジスタを 2 素子内蔵した複合タイプ

UPA509TA

Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
Contextual Info: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor

Contextual Info: 108&3
01&3"5*0/"-
".1-*'*&34 PA50 • PA50A M I C R O T E C H N O L O G Y 551888"1&9.*$305&$)$0.



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 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs

Contextual Info: POWER OPERATIONAL AMPLIFIERS PA50 • PA50A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs

Contextual Info: POWER OPERATIONAL AMPLIFIERS PA50 • PA50A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs

NIKO-SEM

Abstract: PA502FM sot23 CODE 02 sm 17 35 tc p-Channel Logic Level Enhancement Mode sot-23 20YWW TRANSISTOR SOT-23
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM PA502FM Mode Field Effect Transistor SOT-23 D PRODUCT SUMMARY V BR DSS RDS(ON) ID -20 150mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

amplifier 400W

Abstract: MO-127 PA50 PA50A 300 watts amplifier
Contextual Info: POWER OPERATIONAL AMPLIFIERS PA50 • PA50A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs

Contextual Info: SPECIFICATIONS FOR CHIP LED MODEL: WR-PA5050UEUGUB/C WENRUN OPTOELECTRONIC WENRUN TOP LED WR-PA5050UEUGUB/C Part No. Emitted Color Chip Materia Len's No. WR-PA5050UEUGUB/C Red Green Blue AlGaInP InGaN InGaN Color Water Clear ◆ Features: Compatible with automatic placement equipment