PANASONIC MA27 Search Results

PANASONIC MA27

Abstract: delay line 330ns MA27 MN8033 MN8033S MN8038 MN8038S 561R agdbb st 1009
Contextual Info: PANASONIC 6932852 PANASONIC INDL/ELEK -CIO »7 ^ 3 2 0 5 2 72 I N D L t E L E C T R O N IC " ~ “ .7 2 Ç — 000^13 0,6613 — D ~^M N 8038, w .j- M N 8038S M N 8038, M N8038S CCD • CCD Delay Line for Video Signal ■ ^ ^ S E S O / P i n Assignment

SSSMini 3

Contextual Info: New Low loss and low distortion for RF bandswitching PIN Diode Series „ Overview Panasonic PIN Diodes are designed for AGC in antenna switches and bandswitching in tuner applications. The high efficiency low loss/low distortion as well as its smaller and thinner package is the most vital feature for

AN7273

Abstract: AN7223
Contextual Info: Panasonic ic AN 7273 A M fa -+ , FM -A M 4 > r a » * K « @ !8 /A M Tuner, FM-AM IF Amplifier Circuit • m * AN7273 l±, AN7223 ir H i-F i X t w * + a . - i - f t icISttSEM L AN7223 iO& itg* t o t |H B#U X Y ■ 4$ t « • FM-AM iflJfl) • ( x h -,- f\i - t a i # )

Contextual Info: PANASONIC PANASONI C -CIO 72 I NDL t E L E C T R O N I C ~~.~ 1 7 ^ 3 2 0 5 2 7 2Ç 0 6 6 1 3 — p M N 8038, M N8038S • M M N 8038, & Í É Í f D !iV., T R T ^ CCD Delay Line for Video Signal ■ ^^SESO/Pin Assignment £ l tz M N 8 0 3 8 S I± ,

MA27V16

Contextual Info: Variable Capacitance Diodes MA27V16 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 5° Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.01 Reverse voltage DC Symbol 0.52±0.03

MA27P01

Contextual Info: PIN diodes MA27P01 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For high frequency switch 0.13+0.05 –0.02 Symbol Rating Unit VR 60 V Forward current DC IF 100 mA Power dissipation * PD 150 mW Junction temperature Tj 150 °C Storage temperature

MA27V12

Contextual Info: Variable Capacitance Diodes MA27V12 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 8 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

MA27V04

Contextual Info: Variable Capacitance Diodes MA27V04 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

MA27331

Contextual Info: Variable Capacitance Diodes MA27331 Silicon epitaxial planar type Unit: mm For VCO of a UHF radio 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit VR 12 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.01 Reverse voltage DC Rating

MA27V03

Contextual Info: Variable Capacitance Diodes MA27V03 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

MA27V09

Contextual Info: Variable Capacitance Diodes MA27V09 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

MA27V02

Contextual Info: Variable Capacitance Diodes MA27V02 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

MA27V15

Contextual Info: Variable Capacitance Diodes MA27V15 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For VCO 0.10+0.05 –0.02 0.60±0.05 • Absolute Maximum Ratings Ta = 25°C Rating Unit VR 60 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150

IR 984

Abstract: MA27V13
Contextual Info: Variable Capacitance Diodes MA27V13 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 12 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max.

Contextual Info: Variable Capacitance Diodes MA27376 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Junction temperature Storage temperatur Symbol Rating Unit VR 6 V Tj 125 °C Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

MA27V07

Contextual Info: Variable Capacitance Diodes MA27V07 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

MA27P02

Contextual Info: PIN diodes MA27P02 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For high frequency switch 0.13+0.05 –0.02 Symbol Rating Unit VR 60 V Forward current DC IF 100 mA Power dissipation * PD 150 mW Junction temperature Tj 150 °C Storage temperature

MA27V11

Abstract: MA1401
Contextual Info: Variable Capacitance Diodes MA27V11 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 8 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.01 Parameter Reverse voltage DC

MA27376

Contextual Info: Variable Capacitance Diodes MA27376 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Junction temperature Storage temperatur Symbol Rating Unit VR 6 V Tj 125 °C Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

MA27V01

Contextual Info: Variable Capacitance Diodes MA27V01 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05

MA27

Abstract: MA2B0270A MA2B027 MA2B0270B MA2B027WA PANASONIC MA27 MA27 Series
Contextual Info: Varistors MA2B027 Series MA27 Series Silicon epitaxial planar type variable resistor For temperature and reduced voltage compensation Unit : mm φ 0.56 max. • Features • High reliability achieved through combination of a planar type chip and glass sealing structure

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

MA3DF30

Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
Contextual Info: 2009 ver. 2 Diode Series %JPEF
4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters