PANASONIC VF 100 Search Results

IFSM

Abstract: MA22D26
Contextual Info: New Mid-Power Low VF Schottky Barrier Diode „ Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% below conventional our products reduces power consumption and enhances

Contextual Info: New Mid-Power Low VF Schottky Barrier Diode „ Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% lower than our conventional products reduces power consumption and enhances equipment efficiency.

Contextual Info: New Mid-Power Low VF Schottky Barrier Diode „ Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes

AN5858K

Abstract: diy rov F5025 V021 V120 circuit diagram of chroma 252 panasonic TV tuner
Contextual Info: Panasonic, ICs for TV AN5858K Color-TV AV-Switch 1C • Overview The AN5858K is an AV switch 1C. It switches five inputs Vf SY, SC, R, and L , and two outputs (TV and monitor). It has the most S- input-pins in the industry and can sup­ port many kind of high grade multi-function TV.

GaAs 850 nm Infrared Emitting Diode

Abstract: LN52
Contextual Info: Panasonic Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • • • • High-power output, high-efficiency : PQ = 6 mW typ. Wide directivity, matched for external optical systems : 0 = 100 deg.

Contextual Info: Panasonic Infrared Light Emitting Diodes LN52 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 6 mW typ. • W ide directivity, matched for external optical systems : 0 = 100 deg.

MA28

Abstract: MA3X028 MA3X0280A MA3X0280B MA3X028TA MA3X028WA MA3X028WB SC-59A PANASONIC MA28
Contextual Info: Varistors MA3X028 Series MA28 Series Silicon epitaxial planar type variable resistor Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 1 + 0.1 3 Unit 6 V MA3X0280A/B Forward current (DC) MA3X028WA/WB IFM 150 mA 100 70 Power dissipation PD 150 mW Junction temperature

LNJ219R9ARA

Contextual Info: I t e m Symbol C o n d i t i o n Typ Limi t Min Max 2. 5 100 2.2 Forward Voltage I p= 1 0 m A 1. 72 v K Reverse Leakage Current V R= 3 V IR Luminous Intensity *2 Ip = 1 0 m A DC 4.2 Io Peak Emission Wavelength X p I F= 1 0 m A D C 655 Spectral Line Half Width A 1

LNJ319G9TRA

Contextual Info: Checked Approved Desi gned Y P E In d i c a to r s M I E R 'r L I A L GaP I N E A tta c h e d S O L U T E P O U A B M A X T M U M -10 *1 Tfp 50 R A T I N G S mW mA C O N D I T I O N t e m Symbol t S p e c VR T opr T s tg •1 -3 0 -+ 8 5 -•10— + 100 mA

tyco+igbt+module+25A

Contextual Info: Panasonic AN79L00/AN79L00M Series 3-pin Negative Output Voltage Regulator 100mA Type • Overview The AN79L00 series is 3-pin fixed negative output volt­ age regulator. Stabilized fixed output voltage is obtained from unstable DC input voltage without using any external components.

MA116

Abstract: MA2J116
Contextual Info: Switching Diodes MA2J116 MA116 Silicon epitaxial planar type Unit : mm • Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) Rating Unit VR 40 V Peak reverse voltage VRM 40 V Average forward current

MA133

Abstract: MA3S133
Contextual Info: Switching Diodes MA3S133 MA133 Silicon epitaxial planar type 1.00±0.05 0.80±0.05 Unit : mm 1.60+0.05 –0.03 For switching circuits 0.12+0.03 –0.01 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Single Peak forward current

MA152WA

Abstract: MA152WK MA3X152D MA3X152E panasonic ma diodes sc-59 Marking
Contextual Info: Switching Diodes MA3X152D, MA3X152E MA152WA, MA152WK Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 Unit 80 V Peak reverse voltage VRM 80 V IF 100 mA IFM 225 Forward current Single

MA2S111

Abstract: SC-79
Contextual Info: Switching Diodes MA2S111 Silicon epitaxial planar type Unit : mm For switching circuits 1.60 ± 0.05 • Features + 0.05 0.2 + 0.05 0.80 − 0.03 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward current IF(AV) 100

MA129

Abstract: MA6X129
Contextual Info: Rectifier Diodes MA6X129 MA129 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 Reverse voltage (DC) VR 200 V Peak reverse voltage VRM 200 V IO 100 mA Output current Single Triple Repetitive peak forward current Single 1.9 ± 0.2 0.95 0.95

MA196

Abstract: MA2C196 PANASONIC MA2C196
Contextual Info: Switching Diodes MA2C196 MA196 Silicon epitaxial planar type Unit : mm For switching circuits φ 0.45 max. COLORED BAND INDICATES CATHODE Unit VR 50 V Repetitive peak reverse voltage VRRM 50 V Average forward current IF(AV) 100 mA Repetitive peak forward current

LN52

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

Panasonic super a series

Abstract: MA133 MA3S133
Contextual Info: Switching Diodes MA3S133 MA133 Silicon epitaxial planar type 1.00±0.05 0.80±0.05 Unit : mm 1.60+0.05 –0.03 For switching circuits 0.12+0.03 –0.01 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Single Peak forward current

MA122

Abstract: MA6X122
Contextual Info: Switching Diodes MA6X122 MA122 Silicon epitaxial planar type Unit : mm For switching circuit + 0.2 2.8 − 0.3 + 0.25 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V current*1 4 3 IF 100 mA IFM 225 mA Non-repetitive peak forward surge current*1,2

LN152

Contextual Info: Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 10 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. 12.7 min. 2.0±0.1 0.2±0.05 3.0±0.3 For optical control systems

MA3X786

Abstract: MA786 panasonic ma diodes sc-59 Marking
Contextual Info: Schottky Barrier Diodes SBD MA3X786 (MA786) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Repetitive peak reverse voltage Peak forward current VR 30 V VRRM 30 V IFM 300 mA Average forward current IF(AV) 100 mA Non-repetitive peak forward surge current*

MA2Z785

Abstract: MA785
Contextual Info: Schottky Barrier Diodes SBD MA2Z785 (MA785) Silicon epitaxial planar type Unit : mm • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short

MA862

Abstract: YHP4191A MA4X862
Contextual Info: Band Switching Diodes MA4X862 MA862 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 0.5 R 35 V IF 100 mA 75 mA/Unit Operating ambient temperature Topr −25 to +85 °C Storage temperature

MA3X787

Abstract: MA787 panasonic ma diodes sc-59 Marking
Contextual Info: Schottky Barrier Diodes SBD MA3X787 (MA787) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Repetitive peak reverse voltage Peak forward current VR 50 V VRRM 50 V IFM 300 mA Average forward current IF(AV) 100 mA Non-repetitive peak forward surge current*