PART MARKING B36 DIODE Search Results

DIODE B36

Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
Contextual Info: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE B36

Abstract: part marking b36 diode MBRS360T3 semiconductor b36 b36 diode 1B marking marking B36 b36 marking Schottky Diode B36
Contextual Info: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

A36 SOT

Contextual Info: OPA OPA 433 OPA336 OPA2336 OPA4336 6 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● OPA336 series microPower CMOS operational amplifiers

Contextual Info: OPA OPA 433 OPA336 OPA2336 OPA4336 6 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● OPA336 series microPower CMOS operational amplifiers

Contextual Info: OPA OPA 433 OPA336 OPA2336 OPA4336 6 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● OPA336 series microPower CMOS operational amplifiers

Contextual Info: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung

DIODE MOTOROLA B34

Abstract: DIODE MOTOROLA B36 motorola b36 motorola b34 motorola package marking diodes b34 diode marking b34 B34 Motorola MOTOROLA B34 diode mbrs340t3 marking b34
Contextual Info: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features epitaxial construction with

DIODE ON SEMICONDUCTOR B34

Abstract: marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE MOTOROLA B34

Abstract: marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34
Contextual Info: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

5M MARKING CODE DIODE SMC

Abstract: SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode
Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

KZ2 sot23

Abstract: KZ3 SOT23 diode kz9 zener KZE sot23 part marking b36 diode marking kyb zener b39 Marking B15 B18 SOT23 KY6 sot23 marking B33 diode
Contextual Info: BZX84B3V0 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • • • ±2% Tolerance on VZ 350mW Power Dissipation Zener Voltages from 3.0V - 39V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

Zener Diode marking b27

Abstract: zener diode marking code B13 zener B13 zener diode b27
Contextual Info: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V

MBRS360T3G

Abstract: MBRS360T3 DIODE B36 part marking b36 diode
Contextual Info: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

KZ3 SOT23

Contextual Info: BZX84B2V7 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • 2% Tolerance on VZ   350mW Power Dissipation   Zener Voltages from 2.7V - 39V Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound.

80-133

Abstract: BZX79-B10 SC-40 311201 SC40 BZX79-C10 spice BZX79C8V2 spice BZX79-F6V2 BZX79-A6V2 b30 do-35
Contextual Info: Philips Semiconductors - PIP - BZX79 series; Voltage regulator diodes Your browser does not support script Philips Semiconductors Home Product Buy MySemiconductors Contact catalogonline Product Information Information as of 2003-02-16 BZX79 series; Voltage regulator

Contextual Info: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

SMD MARKING CODE b24

Abstract: SMD MARKING CODE B15 bzv55c3v3 BZV55-C5V1 SOD80C BZV55A5V1 BZV55C16 PHILIPS smd code dn BZV55 ordering SMD MARKING CODE B36 SOD80c
Contextual Info: Philips Semiconductors - PIP - BZV55 series; Voltage regulator diodes Submit Que Philips Semiconductors Home ProductBuy MySemiconductors ContactProduct Information catalogonline BZV55 series; Voltage regulator diodes Information as of 2003-01-21 My.Semiconductors.COM.

B36 schottky diode

Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device Ăemploys the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

Diode marking CODE 5M smb

Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS360BT3G

Abstract: MBRS360T3G MBRS360T3 B36 schottky diode
Contextual Info: MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V • Suitable for high-density board assembly due to the use of a small

B20 zener diode

Abstract: zener diode b27 diode zener B16 CMZB51 B20 zener diode glass ZENER B18 zener Diode B22 zener B51 b16 zener Zener Diode marking b27
Contextual Info: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V

Contextual Info: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V

5M MARKING CODE DIODE SMC

Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay