PART MARKING RN2 Search Results

RK26

Contextual Info: 1218 Reader's Spreads 6/20/02 8:31 PM Page 185 RN26, RNF26, RK26 radial metal film leaded resistors features • Lead frame construction • High density assembly and excellent self-standing strength • Marking: Blue body color with color dot marking for resistance and tolerance values

Contextual Info: RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2710,RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z z Including two devices in USV (ultra super mini type with 5 leads)

Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including twodevices in SMV (super mini type with 5 leads)

Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design

Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2510, RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SMV (super mini type with 5 leads)

Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design

Contextual Info: RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2710,RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads)

Contextual Info: RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910, RN2911 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads)

Contextual Info: RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2710, RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z z Including two devices in USV (ultra super mini type with 5 leads)

Contextual Info: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit design

RN1610

Abstract: RN1611 RN2610 RN2611
Contextual Info: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2610,RN2611 Unit in mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SM6 (super mini type with 6 leads)

RN1510

Abstract: RN1511 RN2510 RN2511
Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SMV (super mini type with 5 leads)

Contextual Info: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2610, RN2611 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SM6 (super mini type with 6 leads)

RN1910

Abstract: RN1911 RN2910 RN2911
Contextual Info: RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910,RN2911 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads)

Contextual Info: RN2967FE~RN2969FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6-pin)

Contextual Info: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV

Contextual Info: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.

Contextual Info: RN2967FE~RN2969FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6-pin)

RN1112MFV

Abstract: RN1113MFV RN2112MFV RN2113MFV
Contextual Info: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits.

Contextual Info: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1110MFV, RN1111MFV Unit: mm A wide range of resistor values is available for use in various circuits. Complementary to the RN2110MFV, RN2111MFV

Contextual Info: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 1.2±0.05

RN1130MFV

Abstract: RN2130MFV sat 1205
Contextual Info: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Reduce a quantity of parts and manufacturing process

RN1112MFV

Abstract: RN1113MFV RN2112MFV RN2113MFV
Contextual Info: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV to RN2113MFV

Contextual Info: RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2707, RN2708, RN2709 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in USV (ultra super mini type with 5 leads)