RN2510 Search Results

Contextual Info: SILICON PNP EPITAXIAL TYPE RN2510, RN2511 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. Including Two Devices In SMV Super Mini Type with 5 Leads With built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

RN1510

Abstract: RN1511 RN2510 RN2511
Contextual Info: RN2510,RN2511 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2510,RN2511 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

RN1510

Abstract: RN1511 RN2510 RN2511
Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2510,RN2511 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including twodevices in SMV (super mini type with 5 leads) With built-in bias resistors

Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including twodevices in SMV (super mini type with 5 leads)

RN1510

Abstract: RN1511 RN2510 RN2511
Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SMV (super mini type with 5 leads)

RN1510

Abstract: RN1511 RN2510 RN2511
Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including twodevices in SMV (super mini type with 5 leads) With built-in bias resistors

Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including twodevices in SMV (super mini type with 5 leads) l With built-in bias resistors

Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including twodevices in SMV (super mini type with 5 leads) l With built-in bias resistors

Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including twodevices in SMV (super mini type with 5 leads) z With built-in bias resistors

1fa MARKING

Contextual Info: TO SH IB A RN2510,RN2511 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS S 1m H g uR m uN 'm 7 wmr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. mR « N • w 7 R h t 1■ 1■ Unit in mm + 0.2 2.8-0.3 Including Two Devices In SMV (Super Mini Type with 5 Leads)

RN1510

Abstract: RN1511 RN2510 RN2511
Contextual Info: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SMV (super mini type with 5 leads) z With built-in bias resistors

Contextual Info: T O SH IB A R N 25 10 ,R N 25 11 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2510, RN2511 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 - 0.3 Including Two Devices In SMV (Super Mini Type with 5 Leads)

RN1510

Abstract: RN1511 RN2510 RN2511
Contextual Info: RN2510,RN2511 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2510,RN2511 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

em 329

Contextual Info: RN2510,2511 RN2510 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPLICATIONS. 0.2 1.6+-0.1 Including Two Devices In SMV (Super Mini Type with 5 Leads) With b u ilt-in Bias Resistors I Simplify Circuit Design • ?■H-

10Q30

Contextual Info: SIUCQN NPN EPITAXIAL TYPE- Rfl J 51 Q, RN 1 511 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. Including Two Devices In SMV Super Mini Type with 5 leads EE i With b u ilt-in Bias Resistors e 2 Simplify Circuit Design

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

RN1510

Abstract: RN1511 RN2510 RN2511
Contextual Info: RN1510,RN1511 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1510,RN1511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in SMV z (super mini type with 5 leads) z With built-in bias resistors

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©