PB SOT89 MOSFET Search Results

z44n

Abstract: mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N
Contextual Info: AP436 Synchronous Rectifier MOSFET Driver „ Features „ General Descriptions - VOUT slew-rate minimum 100V/uS @ CL=3000pF - IOUT sink & source =1.2 / 0.9 A - Safety considered. - Reduce power system thermal & increase system efficiency. - Pb-free packages: SOT89-5L, SOP-8L

HV9961

Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Contextual Info: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

STR 6656

Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

ic str wg 252

Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

CXDM1002N

Abstract: PB CXDM1002N sot-89 PF MOSFET SMD MARKING CODE 100V N-Channel MOSFET
Contextual Info: Product Brief CXDM1002N 2.0A, 100V N-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM1002N is a 2.0 Amp, 100 Volt N-Channel enhancement-mode MOSFET, designed for motor control, DC-DC conversion and relay driver applications. This

CXDM4060P

Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
Contextual Info: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET

CXDM4060N

Abstract: CXDM3069N, CXDM4060N, and marking NC SOT-89 CXDM6053N smd sot-89 marking code SOT89 MARKING CODE SMD CODE PACKAGE SOT89 sot-89 marking nc
Contextual Info: Product Brief CXDM3069N 30V, 6.9A N-Channel CXDM4060N (40V, 6.0A N-Channel) CXDM6053N (60V, 5.3A N-Channel) SOT-89 MOSFETs in the SOT-89 package Typical Electrical Characteristics Central Semiconductor’s CXDM3069N, CXDM4060N, and CXDM6053N devices are high current N-channel enhancementmode silicon MOSFETs designed for high speed pulsed amplifier

XP161A11A1PR

Abstract: XP161A11A1PR-G marking 4a sot-89
Contextual Info: XP161A11A1PR-G ETR1122_003 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Contextual Info: XP162A12A6PR-G ETR1126_003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

N-channel Power MOSFET with low on-state resistance

Abstract: XP161A1355PR
Contextual Info: XP161A1355PR-G ETR1124_002 Power MOSFET •GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

XP162A11C0PR

Abstract: p-channel mosfet sot89 5V
Contextual Info: XP162A11C0PR-G ETR1125_003 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

N-channel Power MOSFET with low on-state resistance

Abstract: XP161A1265PR
Contextual Info: XP161A1265PR-G ETR1123_002 Power MOSFET •GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

XP162A12A6PR

Contextual Info: XP162A12A6PR-G ETR1126_003 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

XP161A1265PR

Abstract: XP161A1265PR-G
Contextual Info: XP161A1265PR-G ETR1123_003 Power MOSFET •GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Contextual Info: XP161A1355PR-G ETR1124_003 Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Contextual Info: XP162A11C0PR-G ETR1125_003 Power MOSFET GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

XP161A1355PR

Abstract: marking 4a sot-89
Contextual Info: XP161A1355PR-G ETR1124_003 Power MOSFET •GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

P-channel Power MOSFET with low on-state resistance

Abstract: XP162A11C0PR
Contextual Info: XP162A11C0PR-G ETR1125_002 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

N-channel Power MOSFET with low on-state resistance

Abstract: XP161A11A1PR
Contextual Info: XP161A11A1PR-G ETR1122_002 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

P-channel Power MOSFET with low on-state resistance

Abstract: XP162A12A6PR
Contextual Info: XP162A12A6PR-G ETR1126_002 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Contextual Info: 外形寸法図・参考パターン寸法 ●SOT-89 Unit: mm •外形寸法図 4.5±0.1 1.6 +0.15 -0.2 0.4 +0.03 0.4 -0.02 4.0±0.25 1.0±0.2 2.5±0.1 φ1.0 0.47±0.06 0.42±0.06 +0.03 0.4 -0.02 （1.7) 1.5±0.1 （0.25) （1.85) （0.4) 1.5±0.1 (0.1)

45A SOT-89

Abstract: WTM2310A pb sot89 mosfet
Contextual Info: WTM2310A N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 5.0 AMPERES P b Lead Pb -Free DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE Features: 2 SOURCE * Simple Drive Requirement. * Super High Density Cell Design for Extremely Low RDS(ON). 1 2 3 1. GATE

SOT-89

Abstract: PB SOT-89
Contextual Info: ●SOT-89 Power Dissipation Power dissipation data for the SOT-89 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 1. Measurement Condition Reference data

Contextual Info: <Preliminary> FS8844 250 mA Low Quiescent Current LDO Linear Regulator General Description Features The FS8844 series is a positive voltage regulator with high accuracy output voltage and ultra-low quiescent current which is typically 2.0µA. The device is ideal for handheld communication