PC1003 Search Results

PC66-222-920

Abstract: v2200 TSOP44
Contextual Info: 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 168 pin unbuffered DIMM Modules • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

PC100-322

Abstract: SO-DIMM 144-pin
Contextual Info: 3.3V SDRAM Modules HYS64V32220GD L -8A 256MB PC100 144 pin SO-DIMM SDRAM Modules Preliminary information • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 notebook applications • Two bank 32M x 64 non-parity module organisation

TSOP54

Abstract: L-DIM-168-33
Contextual Info: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential &

kb3925

Abstract: isl6262acrz EC-IT8752 pc817 s6 Asus RTL8111C-GR sr7012 asus schematic diagram intel GM45 cantiga asus f3s
Contextual Info: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 3 6 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH

Contextual Info: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write Controlled

PC133-333-520

Contextual Info: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,

PC100-322-620

Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125

PC100-322-622R

Abstract: PC100-322 HYS72V64200GR-8B
Contextual Info: 3.3V 168 pin Registered SDRAM Modules HYS72V8200GR HYS72V16200GR HYS72V32200GR HYS72V32220GR HYS72V64200GR HYS72V128220GR 64MB, 128MB, 256MB, 512MB & 1GB Densities • 168 Pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications

256MSDRAM

Abstract: celestica
Contextual Info: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory

39S256160T

Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
Contextual Info: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge

PC100-322

Abstract: MO-161 TSOP54
Contextual Info: HYS 72Vx2xxGR PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 64 MB, 128 MB, 256 MB, 512 MB & 1 GB Densities • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications • Programmable CAS Latency, Burst Length,

PC100-222-620

Abstract: 16830 72v6 SIEMENS PC100-222-620
Contextual Info: SIEM ENS 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules HYS 64/72V16200GU HYS 64/72V32220GU HYS 64/72V32200GU HYS 64/72V64220GU PC100-168 pin unbuffered DIMM Modules Preliminary information • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

pc100-322-620

Abstract: SDA Physical Layer Specification Version 3.00 1MX16 2MX32 4MX16 SO DIMM DRAM 144 Pin Connector Pinout BA1A11
Contextual Info: PC SDRAM Unbuffered DIMM Specification PC SDRAM UNBUFFERED DIMM SPECIFICATION REVISION 0.9 Oct. 22, 1997 1 of 46 Revision 0.9 PC SDRAM Unbuffered DIMM Specification THIS DOCUMENT IS PROVIDED "AS IS" WITH NO WARRANTIES WHATSOEVER, INCLUDING ANY WARRANTY OF MERCHANTABILITY, FITNESS FOR ANY

D1233

Contextual Info: SIEMENS 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module HYS 64/72V8200GU HYS 64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

Contextual Info: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control

PC100-322

Abstract: PC100-222-620 PC133-333
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,

34c02

Contextual Info: HYS 72Vx2x0GR Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 64 MB, 128 MB, 256 MB, 512 MB & 1 GB Densities • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications • Programmable CAS Latency, Burst Length,

Contextual Info: 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64 72 V4200GU HYS64(72)V8220GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • One bank 4M x 64, 4Mx72 and two bank 8M x 64, 8M x 72 organisation

PC100-322-620

Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
Contextual Info: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

64V32300GU-8-A

Contextual Info: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential &

HYS72V1

Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions

256MDDRSDRAM

Abstract: B22XX
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,

Contextual Info: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory

TL201212-4R7K

Abstract: pr4401 l0806 2N3904 A45 VRA6 C1152 VCC317 prestonia GEVENT12 quanta
Contextual Info: A B C D E 4 4 X-BUS FLASH USB Prestonia Prestonia CPU CPU BMC CPU BUS SP SIO 417 PP LPC BUS MEMORY I/F CSB5 3 CMIC_SL Thin IMB FLPY 3 IMB IDE PCI Slot 33MHz/32bit 4 DIMMs PCI BUS 0 BCM5702 Gigabit Ethernet RAGE XL Secondary 2 PCI BUS 1 PCI X Slot 100MHz/64bit