Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PCH MOS FET Search Results

    PCH MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    PCH MOS FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ROHM QS6J1

    Abstract: QS6J1
    Contextual Info: QS6J1 Transistors 2.5V Drive Pch+Pch MOS FET QS6J1 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOS FET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching.


    Original     		PDF

    Contextual Info: QS6J3 Transistors 2.5V Drive Pch+Pch MOS FET QS6J3 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOS FET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching.


    Original     		PDF

    QS6M4

    Abstract: TSMT6 Pch MOS FET m04 fet
    Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.


    Original     		PDF

    Pch MOS FET

    Abstract: US6M2 TUMT6
    Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.


    Original     		85Max. 15Max. Pch MOS FET US6M2 TUMT6 PDF

    Contextual Info: QS5U28 QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with


    Original     		QS5U28 QS5U28 PDF

    Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.


    Original     		QS6U24 QS6U24 PDF

    QS5U27

    Contextual Info: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a


    Original     		QS5U27 QS5U27 PDF

    QS5U23

    Abstract: ONM10
    Contextual Info: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a


    Original     		QS5U23 QS5U23 ONM10 PDF

    Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.


    Original     		QS6U24 QS6U24 PDF

    QS5U27

    Abstract: IR 240 FET
    Contextual Info: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a


    Original     		QS5U27 QS5U27 IR 240 FET PDF

    QS6U24

    Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.


    Original     		QS6U24 QS6U24 PDF

    Contextual Info: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a


    Original     		QS5U23 QS5U23 PDF

    Contextual Info: QS5U27 QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a


    Original     		QS5U27 QS5U27 PDF

    Contextual Info: QS5U23 QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a


    Original     		QS5U23 QS5U23 PDF

    US5U29

    Contextual Info: US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 1pin mark zFeatures 1) The US5U29 combines Pch MOS FET with a


    Original     		US5U29 US5U29 15Max. 85Max. PDF

    US5U29

    Contextual Info: US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 1pin mark zFeatures 1) The US5U29 combines Pch MOS FET with a


    Original     		US5U29 US5U29 15Max. 85Max. PDF

    QS5U21

    Contextual Info: QS5U21 Transistor 2.5V Drive Pch+SBD MOS FET QS5U21 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 (1) 0~0.1 0.3~0.6 zFeatures 1) The QS5U21 combines Pch MOS FET with a


    Original     		QS5U21 QS5U21 PDF

    Contextual Info: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 Features 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.


    Original     		QS5U28 QS5U28 PDF

    Contextual Info: QS5U21 QS5U21 Transistor 2.5V Drive Pch+SBD MOS FET QS5U21 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 (1) 0~0.1 0.3~0.6 zFeatures 1) The QS5U21 combines Pch MOS FET with a


    Original     		QS5U21 QS5U21 PDF

    Contextual Info: QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (2) (1) 0~0.1 0.3~0.6 zFeatures 1) The QS6U22 combines Pch MOS FET with a Schottky


    Original     		QS6U22 QS6U22 PDF

    Contextual Info: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.


    Original     		QS5U28 QS5U28 PDF

    Contextual Info: SP8J1FRA SP8J1 Transistors AEC-Q101 Qualified 4V Drive Pch+Pch MOS FET SP8J1 SP8J1FRA zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark Each lead has same dimensions zApplications Power switching


    Original     		AEC-Q101 PDF

    Contextual Info: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 Features 1) The QS5U27 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package.


    Original     		QS5U27 QS5U27 PDF

    Contextual Info: QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (1) (2) 0~0.1 0.3~0.6 Features 1) The QS6U22 combines Pch MOS FET with a Schottky


    Original     		QS6U22 QS6U22 PDF