PD 2N60 Search Results

BOX53

Abstract: BOW83 NSOU45 PM016K40 BD875 6037Y MPS-U45 MPSU45 Motorola MPSU45 BSS50 SOT
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) Min NPN Darlington Transistors, (Cont'd) 5 10 MPSU45 MPSU45 2S01413 2S0687 2N6037 MJE3300 6037Y SOM3300 SOM3300 SOM3303 Solid Stine Motorola ToshlbaCorp ToshibaCorp

transistor 8026

Abstract: pnp 150w darlington transistor to3 package
Contextual Info: 2N6052 MECHANICAL DATA PNP DARLINGTON SILICON POWER TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VCEO = 100V IC = 12A PD = 150W 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage

Contextual Info: 2N6052 MECHANICAL DATA PNP DARLINGTON SILICON POWER TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VCEO = 100V IC = 12A PD = 150W 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage

BOX34B

Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A

transistor te 2443

Contextual Info: 2N6054 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6294 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 < o m MAXIMUM RATINGS 4.o A Ie 8.o A PEAK 6o V Pd is s 5o W @ Te # 25 0C Tj -65 0C to +2oo 0C

Contextual Info: 2N6059 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6059 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 12 A Vce 1OO V Pd is s 15O W @ Te " 25 0C Tj -65 0C to &2OO 0C Ts t g -65 0C to &2OO 0C

Contextual Info: 2N6052 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6052 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO - 3 MAXIMUM RATINGS Ie 12 A Vc e -1OO V Pd i s s 15O W @ T e # 25 0 C Tj -65 0 C to &2OO 0 C Ts t g

2N6054

Contextual Info: 2N6054 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION; The 2N6054 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 8.O A Vc e -8O V Pd is s 1OO W @ Te " 25 0C Tj 65 0C to +2OO 0C Ts t g 65 0C to +2OO 0C

2N4265

Abstract: Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062 2N2712
Contextual Info: SPRAGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES 2N TRANSISTORS • Sm all-signal TO-92 plastic transistors. JEDEC ‘2N’ registered types. Catalog Number Case Style PD , = 25°C mW 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924

2N8261

Contextual Info: Power Transistors TO-66 Case TYPE NO. te A NPN PNP 2N3054 Pd (W) MAX bvcbo hFE (V) b v CEO (V) MIN MIN MIN MAX le (A) VCE(SAT) Iß (A) (V) MAX (MHz) MIN 4.0 25 90 55 25 150 0.5 1.0 0.5 0.8 2N3054A 2N6049 4.0 75 90 55 25 150 0.5 0.5 0.5 0.8 2N3583 2N6420

2SB1100K

Abstract: 2SB638H 2SB1147 2SB1100M 2SB1099 2SB711 PMD13K100 2SB1099L
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (A) (V) PD hFE Max ON) Min Max tT 'CBO tr Max Max (HZ) (A) (8) r (CE)sat 'Oper Max (Ohms) Max (°C) Package Style Darlington Transistors, PNP (Cont'd) . . . .5 -10 . . .15 . . . .

Contextual Info: Search Results Part number search for devices beginning "2N5933" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5933 NPN TO3 100V 30A 20 100 4/20 30MHz

2n3054

Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN •c A PHP 2N3054 Pd bvcbo bvceo (W) (V) w MAX @ IC hFE W VCE(SAT) @ >C (V) (A i *r (MHz) MIN MIN MIN MAX 4. 0 25 90 55 25 150 0.5 1.0 0. 5 0. 8 MAX MIN 2N3054A 2N6049 4. 0 75 90 55 25 150 0. 5 0.5 0.5 0.8 2N3583

BU409D

Abstract: rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r 'CBO Max hFE fT ON) Min (Hz) Max (A) Max (s) (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

box54c

Abstract: BOX34C b0336 BOW84C B0650 2SB1100K 2SB1098L BOW24C 2SB1099 2SB897
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (s) (s) TOper Max (Oe) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 B0262B B0262B B0682 2SB1098M 2SB1098L

B0677A

Abstract: B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max (Hz) (A) tr Max (8) tf Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 2S01164Z 2S01164Z SON301 U2T301

2sd898 hitachi

Abstract: KT816A 2SC2906A BUV36 2SD90 BUV36A 2n6095 2N5700 MJE8500 THB13
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Max (A) (V) ON) PD hFE Min *T (HZ) r 'CBO Max (A) Max (s) (CE)ut Max (Ohms) Top«r Max Package Style (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . . -15 . .

BD561

Abstract: BD585 PT9788A 8D434 BDX24 2SD810 BD186 motorola MJE2480 BD163 BD272
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO t0N T(CE)Mt Max PD Max Max ON) Min (Hz) (A) (8) Max (Ohms) Toper Max CO Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 MRF222 MRF223

KT827B

Abstract: KT935A BDX61 kt827 rcs258 TO3VAR package
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT •CBO Max PD Max toN Max ON) Min (Hz) (A) (8) r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 MRF422 MRF422 PT9780

2N3738

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3736 2N6049 2N6420 2N6421 2N6422
Contextual Info: Power Transistors a v ii -j K Jy a TO-66 Case TYPE NO. •c A PNP NPN 2N3054 Pd (W) bvc b o bvceo (V) (V) ie (A) hFE VCE(SAT) ® «e (V) (A) MIN MIN MIN MAX 4 .0 25 90 55 25 1 50 0 .5 1.0 0 .5 0 .8 0.8 MAX MAX h {MHz) MIN 2N 3054A 2N6049 4 .0 75 90 55

BD368

Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
Contextual Info: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0

BD149

Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25