PD 680 TDS Search Results

Contextual Info: September 1996 Revision 1.0 DATA SHEET EOB1UV641 1/4 -(60/70)TG-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EOB1UV641(1/4)-(60/70)TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 144-pins, small outline dual-in-line (SO DIMM) memory modules.

Contextual Info: MITSUBISHI LS Is DRAM MODULE M H 1 M 3 2 B Y J - 5 ,-6 ,-7 / M H 1 M 3 2 B N Y J - 5 ,-6 , - 7 FAST PAGE MODE 33554432-BIT (1048576-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH1M32BYJ/BNYJ is 1048576-word x 32-bit dynamic PIN CONFIGURATION (TOP VIEW) (Single side]

Contextual Info: DRAM MODULE KM M372V225A J KMM372V225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V225A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V225A - 6

HY51V18164B

Abstract: HY51V18164
Contextual Info: HYM5V64124A Q-Series Unbuffered SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOPII and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy

5v RAS 0610

Contextual Info: •HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO m ode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1

Contextual Info: “HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 j.F

OA53

Abstract: mtc61
Contextual Info: O K I Semiconductor MTC8101M32-XX2A1 >01 DRAM CARD DESCRIPTION The MTC8101M32-xx2Al-01 is a lM-byte dynamic RAM card composed of 256K-word x 32-bit, being a 88-pin 2-piece type card proposed by the DRAM card guide-line of JEIDA. This provides a built-in buffer IC together with the DRAM device.

M378T2953EZ3

Abstract: samsung 512mb ddr
Contextual Info: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

LTRG

Contextual Info: “H Y U N D A I HYM5V64224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of four HY5V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0 1mF and

Contextual Info: MH4M32AATJ-6,-7 FAST PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT DYNAMIC RAM DESCRIPTION The MH4M32AATJ ¡s 4194304-word x 32-bit dynamic RAM. PIN CONFIGURATION (TOP VIEW) [Both side] This is consists of eight industry standard 4M x 4 dynamic o RAMs in TSOP.

Contextual Info: MITSUBISHI LSIs MH4M08A0J-6,-7,-8,-10/ MH4M08A0JA-6,-7,-8,-10 FAST PAGE MODE 4194304-WQRD BY 8-BIT DYNAMIC RAM DESCRIPTION The M H 4 M 0 8 A 0 J , J A is 4 1 9 4 3 0 4 word x 8 bit dynamic RAM and consists of eight industry standard 4 M x 1 PIN CONFIGURATION TOP VIEW

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-45V8AB641 with 64M VC SDRAM TM VirtualChannel 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V8AB641 is a 8,388,608 words by 64 bits VirtualChannel synchronous dynamic RAM module on which 8

HY51V18164

Contextual Info: • ' M Y U H D A I — • H Y M 5 V 6 4 1 2 4 A Q - S e r ie s SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin S O J or 44/50 pin TSO PII and one 2048 bit EEPRO M on a 144 Zig Zag Dual pin glass-epoxy

Contextual Info: .o S MH4M32AJJ-6,-7/ MH4M32ANJJ-6,-7 FAST PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 4M 32AJJ/A N JJ is 4194304-wordby 3 2 -b it dynamic RAM module. This consists of eight industry standard 4M x 4 dynamic RAMs in TSOP. FEATURES

91T6

Abstract: M378T6553CZ
Contextual Info: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC Revision 1.1 March 2005 Rev. 1.1 Mar. 2005 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered DIMM Ordering Information

Contextual Info: DRAM MODULES KMM5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M5321000AV- 7 • • • • • • • tRAC tcAC tRC 70ns 2 0 ns 130ns KMM5321000AV- 8 80ns 2 0 ns 150ns KM M5321000AV-10 1 0 0 ns 25ns 180ns

M378T2953EZ3

Contextual Info: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

M378T2953EZ3

Abstract: M391T2953EZ3 M378T2953EZ3-Ce7 M391T6553EZ3 DDR2-533 DDR2-667 DDR2-800 M391T M391
Contextual Info: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

MSC2383257D

Abstract: msc23832 RAS 05
Contextual Info: This version: Mar. 6. 2000 Previous version: Jan. 13. 2000 Semiconductor MSC2383257D-xxBS16/DS16 8,388,608-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2383257D-xxBS16/DS16 is an 8,388,608-word x 32-bit CMOS dynamic random access memory module

KM41C4000A

Contextual Info: S A M S UN G E L E C T R O N I C S INC tME ]> • 7 T b M : m 2 D G 1 M 5 0 4 flOO ■ Sn6K KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic

E-MOSFET

Contextual Info: INTEGRATED CIRCUITS DIVISION Application Note: AN-201 PRELIMINARY CPC1580 Application Technical Information AN-201-R00D www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION 1 AN-201 PRELIMINARY Using the CPC1580 Isolated Gate Driver IC The CPC1580 is an excellent choice for remote

hy51v18164b

Contextual Info: -HYUNDAI HYM5V64124A Q-Series SO DIMM 1M x 64-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V64124Ais a 1M x 64-bit ED O mode C M O S DRAM module consisting of four HY51V18164B in 42/42 pin SO J or 44/50 pin TSOP-II and one 2048 bit EEPR O M on a 144 Zig Zag Dual pin glass-epoxy printed circuit

Contextual Info: •HYUNDAI HYM5V64124A Q-Series SO DIMM 1M _ X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit

Contextual Info: HB56H164EJN-6AR 1,048,576-Word x 64-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8BYTE DIMM Rev. 1.0 Feb. 01 1996 Description The HB56H164EJN belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The