PD SUBMOUNT Search Results

Contextual Info: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]

Contextual Info: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] .060 [1.52] PD CL .030 [0.76] I METALIZATION THIS SIDE C L .040 [1.02] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]

Photodiode cost sheet

Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
Contextual Info: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC

InGaas PIN photodiode chip

Abstract: datasheets for photodiode chips
Contextual Info: Optical Monitoring Photodiode Chip KIP-M25-1 Description KIP-M25-1 is InGaAs PIN Photodiode chip with □250 um active square. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD Low capacitance and low dark current

InGaas PIN photodiode chip

Abstract: for photodiode chips KIP-107-1 pin InGaAs chip 1071 cp
Contextual Info: 1.25G InGaAs PIN Photodiode Chip KIP-107-1 Description KIP-107-1 is InGaAs PIN Photodiode chip with Ø75um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current

KIP-M1M

Abstract: InGaas PIN photodiode chip
Contextual Info: Optical Monitoring Photodiode Chip for KIP-MxM KIP-MxM Description KIP-MxM-1 is InGaAs PIN Photodiode chip with BIG size active diameter Ø1.0mm,Ø2.0mm,Ø3.0mm . It is recommended for Laser diode life test and optical power monitoring. Features Front illuminated planar PIN-PD

InGaas PIN photodiode chip

Abstract: for photodiode chips KIP-205-1
Contextual Info: 2.5 Gbps InGaAs PIN Photodiode Chip KIP-205-1 Description KIP-205-1 is InGaAs PIN Photodiode chip with Ø50 um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current

Contextual Info: V ishay I ntertechnolog y, I nc . AND TEC I INNOVAT O L OGY Using Thin Film Substrates N HN DIODE SUBMOUNT CAPABILITIES O 19 62-2012 Resistors - Vishay Electro-Films LED Submounts INTRODUCTION Vishay Electro-Films, with its complete in-house capability, offers a wide variety of solutions for

EPITAXX ETX 300

Abstract: K050 EPITAXX ETX 75 InGaas PIN photodiode, 1550 sensitivity 00003S PD submount HYBRID CERAMIC Photodiodes ETX 40 InGaas PIN photodiode, 1550 sensitivity application
Contextual Info: = — = = ETX 75CER-H/F ETX 300CER-H/F iPiTlIAA H ig h Speed InGaAs P hotodiodes Front Illuminated on Ceramic Submounts Fe a tu res •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current

EPITAXX ETX 300

Abstract: InGaas PIN photodiode, 1550 sensitivity EPITAXX photodiodes EPITAXX ETX 75 InGaAs backside illuminated ingaas photodiode inGaAs photodiode 1550 InGaas PIN photodiode, 1550 ETX 40
Contextual Info: E g = = = v v ETX 75CER-H/F ETX 300CER-H/F High Speed InGaAs Photodiodes Front Illuminated on Ceramic Submounts Features •Photosensitive diameters of 75 or 300 |i.m ■High responsivity at 1300 and 1550 nm ■Low capacitance, low dark current ■Planar, passivated diode

XML-365-SD

Contextual Info: XML-365-SD TECHNICAL DATA UV LED Array, SMD XML-365-SD is an ultra high power multi emitter LED array, utilizing 25 LED chip dies on a ceramic SMD submount and UV resistant silicone resin lens. It complies with RoHS directive Drawing & electrical layout dimensions in mm

XML-385-SD

Contextual Info: XML-385-SD TECHNICAL DATA UV LED Array, SMD XML-385-SD is an ultra high power multi emitter LED array, utilizing 25 LED chip dies on a ceramic SMD submount and UV resistant silicone resin lens. It complies with RoHS directive Drawing & electrical layout dimensions in mm

XHL-375-SD

Contextual Info: XHL-375-SD TECHNICAL DATA UV LED Array, SMD XML-375-SD is a high power multi emitter LED, utilizing 4 high power LED chip dies on a ceramic SMD submount. It complies with RoHS directive. Specifications • • Structure: GaN Peak Wavelength: 375 - 380 nm Optical Output Power: typ. 95 mW

650nm 50mw

Abstract: 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40
Contextual Info: ADE-508-011C Information and Industry Laser Diodes Information and Industry Laser Diodes Application Note Publication Date: 1st Edition, June 1996 4th Edition, February 1999 Published by: Electronic Devices Sales & Marketing Group Semiconductor & Integrated Circuits

OPR 12 PHOTOCELL

Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
Contextual Info: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In

TOLD2000MDA

Abstract: laser diode toshiba 780nm laser diode toshiba 650 780nm laser diode 8 mW TOLD2000 laser diode DVD laser diode toshiba 650nm 5mw 5v laser 780nm laser diode TOLD
Contextual Info: TOLD2000MDA TOSHIBA Two-wavelength Laser Diode InGaAlP/AlGaAs TOLD2000MDA Window Glassless Package Light Source for DVD-Player/DVD-ROM Unit: mm Optical output power: Po 7mW Operation temperature: Tc 10 to 70℃ Beam distance: 110 m optical center: 780-nm lasing point

dfb activation energy

Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Contextual Info: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a

High-Frequency Modulation IC for Laser Diode

Abstract: TC9386FU
Contextual Info: 5. Technical Datasheets 5–3 TOLD2003SDA Features • Two-wavelength laser diode • Use of a monolithic chip realizes high-precision lasing point spacing. • Has succeeded in 85˚C operation for the first time as a two-wavelength laser diode. Suitable for use in DVD car

RLD78MZM7

Abstract: Rohm multibeam
Contextual Info: Laser Diodes Datasheet 660nm / 780nm Dual Wavelength Lasers Part No. Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im ɵ⊥ ɵ// I TH Max. （mW） （V） （°

RLD2WMFR1

Abstract: TO 5.6mm package
Contextual Info: RLD2WMFR1 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

RLD65NZX2

Contextual Info: RLD65NZX2 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

Contextual Info: RLD65PZX3 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

Contextual Info: RLD2WMFL3 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im

Contextual Info: RLD2WMFL1 Data Sheet 660nm / 780nm Dual Wavelength Lasers Power 660nm ／ Part No. 780nm Wavelength λp （nm） Absolute maximum ratings （Tc=25° C） Electrical and optical characteristics （Tc=25° C） Po （mW） Topr PO VR Iop η Vop Im