PD448 Search Results
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Amphenol Aerospace JTP02RE-22-35PD(448)(LC)RECEPT |
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Amphenol Aerospace JTP02RE-22-21PD(448)(LC)RECEPT |
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Amphenol Aerospace JTP00RE-20-41PD(448)(LC)RECEPT |
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Amphenol Corporation JTP02RE-22-35PD(448)(LC)- Bulk (Alt: JTP02RE-22-35PD(448)(LC)) |
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Amphenol Corporation JTP02RE-22-21PD(448)(LC)- Bulk (Alt: JTP02RE-22-21PD(448)(LC)) |
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PD448 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PD448012-X
Abstract: 12X18 PD448012
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PD448012-X 512K-WORD 16-BIT PD448012-X 48-pin I/O16) 12X18 PD448012 | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The μPD4482161 is a 524,288-word by 16-bit, the μPD4482181 is a 524,288-word by 18-bit, the μPD4482321 is a 262,144-word by 32-bit and the μPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with |
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PD4482161, PD4482161 288-word 16-bit, PD4482181 18-bit, PD4482321 144-word 32-bit | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4482163, 4482183, 4482323, 4482363 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The μPD4482163 is a 524,288-word by 16-bit, the μPD4482183 is a 524,288-word by 18-bit, μPD4482323 is a 262,144word by 32-bit and the μPD4482363 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS |
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PD4482163, PD4482163 288-word 16-bit, PD4482183 18-bit, PD4482323 144word 32-bit | |
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD4482161, 4482181, 4482321, 4482361 8M ビット CMOS シンクロナス高速 SRAM フロー・スルー・オペレーション μPD4482161(524,288 ワードx16 ビット),μPD4482181(524,288 ワード×18 ビット),μPD4482321(262,144 |
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PD4482161, PD4482181 PD4482321 PD4482161 PD4482361262 C-A65-A75-A85-C75-C85 C-A65Y-A75Y-A85Y-C75Y-C85Y ns133 ns117 ns100 | |
va44aContextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD4481162, 4481182, 4481322, 4481362 8M ビット ZEROSBTM SRAM パイプライン・オペレーション μPD4481162(524,288 ワードx16 ビット),μPD4481182(524,288 ワード×18 ビット),μPD4481322(262,144 |
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PD4481162, PD4481182 PD4481322 PD4481162 PD4481362262 -A44-A50-A60-A75-A44Y-A50Y-A60Y-A75Y -C60-C75-C60Y-C75Y C-A44-A50-A60-A75-C60-C75 C-A44Y-A50Y-A60Y-A75Y-C60Y-C75Y ns225 va44a | |
PD4481161
Abstract: m155
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PD4481161, PD4481161 288-word 16-bit, PD4481181 18-bit, PD4481321 144-word 32-bit m155 | |
PD448012-X
Abstract: Cxxx uPD448012-X NEC marking BX
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PD448012-X 512K-WORD 16-BIT PD448012-X 48-pin I/O16) Cxxx uPD448012-X NEC marking BX | |
UPD448012GY-B55X-MJH-A
Abstract: uPD448012GY-B70X-MJH
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PD448012-X 512K-WORD 16-BIT PD448012-X 48-pin I/O16) UPD448012GY-B55X-MJH-A uPD448012GY-B70X-MJH | |
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity. |
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PD448012-X 512K-WORD 16-BIT PD448012-X 48-PIN I/O16) | |
100-PIN PLASTIC LQFP NECContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4482162, 4482182, 4482322, 4482362 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT Description The μPD4482162 is a 524,288-word by 16-bit, the μPD4482182 is a 524,288-word by 18-bit, μPD4482322 is a 262,144word by 32-bit and the μPD4482362 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS |
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PD4482162, PD4482162 288-word 16-bit, PD4482182 18-bit, PD4482322 144word 32-bit 100-PIN PLASTIC LQFP NEC | |
c60 equivalent
Abstract: marking A44 MARKING A50
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Original |
PD4481162, PD4481162 288-word 16-bit, PD4481182 18-bit, PD4481322 144-word 32-bit c60 equivalent marking A44 MARKING A50 | |
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4481161-Y, 4481181-Y, 4481321-Y, 4481361-Y 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD4481161-Y is a 524,288-word by 16-bit, the µPD4481181-Y is a 524,288-word by 18-bit, the µPD4481321Y is a 262,144-word by 32-bit and the µPD4481361-Y is a 262,144-word by 36-bit ZEROSB static RAM fabricated |
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PD4481161-Y, 4481181-Y, 4481321-Y, 4481361-Y PD4481161-Y 288-word 16-bit, PD4481181-Y 18-bit, | |
a65y
Abstract: PD4481161 LQFP14 448136
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PD4481161, PD4481181 PD4481321 PD4481161 PD4481361262 -A65-A75-A85-A65Y-A75Y-A85Y -C75-C85-C75Y-C85Y C-A65-A75-A85-C75-C85 C-A65Y-A75Y-A85Y-C75Y-C85Y ns133 a65y PD4481161 LQFP14 448136 | |
uPD448012GY-B70X-MJHContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity. |
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PD448012-X 512K-WORD 16-BIT PD448012-X 48-pin I/O16) uPD448012GY-B70X-MJH | |
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PD448012-XContextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |
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A-44440
Abstract: NS225 PD4482322
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PD4482162, PD4482162 PD4482182 PD4482322 PD4482362262 C-A44-A50-A60-C60 C-A44Y-A50Y-A60Y-C60Y ns225 ns200 ns167 A-44440 PD4482322 | |
pd448
Abstract: GW 94 H
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PD4482163, PD4482163 PD4482183 PD4482323 PD4482363262 C-A44-A50-A60 C-A44Y-A50Y-A60Y ns225 ns200 ns167 pd448 GW 94 H | |
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |
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PD4464Contextual Info: SEC //P D 4 4 6 4 8,192 X 8-B IT STATIC CMOS RAM NEC Electronics Inc. Pin Configuration Description T h e //P D 4 4 6 4 is a high-speed 8,192-word by 8-b it static RAM fabricated with advanced silicon-gate technology. Full C M O S storage cells with six transistors make the |
OCR Scan |
192-word 28-pin 28-Pln //PD4464-12L/-15L/-20L: 3-001761A PD4464 |