PDMB100B12 Search Results

PDMB100B12

Contextual Info: IGBT MODULE PDMB100B12 Dual 100A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 500g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation

PDMB100B12C2

Contextual Info: PDMB100B12C2 IGBT MODULE Dual 100A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation

PDMB100B12C

Contextual Info: IGBT MODULE PDMB100B12C Dual 100A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 320g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation

74hc06

Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
Contextual Info: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路

TLP250 MOSFET DRIVER application note

Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
Contextual Info: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation

LA 4825

Contextual Info: 目次 各種パワーデバイスとIGBT 2 IGBTモジュール回路構成 4 IGBTモジュール定格と特性 6 IGBTモジュール損失と放熱 10 IGBTモジュールのゲート ドライブ 20 ハイサイドのドライブ 24 3相ブリッジインバータ

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PDMB100B12C

Abstract: PDMB100B12C2
Contextual Info: QS043-401M0059 2/4 ＰＤＭＢ１００Ｂ１２Ｃ ＩＧＢＴ Ｍｏｄｕｌｅ－Ｄｕａｌ １００ Ａ，１２００Ｖ □ 外 形 寸 法 図 ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ 94.0 80 ±0.25 12.0 11.0 12.0 11.0 12.0 5 4 23.0 30 +1.0

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

1200VIGBT

Contextual Info: ｢Ｂシリーズ｣ 1200V IGBTモジュールの紹介 高速性と低損失を実現した 新世代チップを採用 日本インター株式会社 モジュール製品部 主な特性の改良点 Ｃシリーズとの比較

Contextual Info: QS043-401M0059 2/4 ＰＤＭＢ１００Ｂ１２Ｃ ＩＧＢＴ Ｍｏｄｕｌｅ－Ｄｕａｌ １００ Ａ，１２００Ｖ □ 外 形 寸 法 図 ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ 94.0 80 ±0.25 12.0 11.0 12.0 11.0 12.0 5 4 23.0 30 +1.0

74hc06

Abstract: equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT
Contextual Info: 목차 각종 전력 소자와 IGBT 2 IGBT 모듈의 회로 구성 4 IGBT 모듈의 정격 및 특성 6 IGBT의 모듈 손실과 방열 10 IGBT 모듈의 게이트 구동 20 상부 구동 24 3상 브리지 인버터 26 단락 및 과전압 보호 30 스너버 회로

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ