PEAK SPECTRAL RESPONSE 900 NM PHOTO DETECTOR Search Results
PEAK SPECTRAL RESPONSE 900 NM PHOTO DETECTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LM161H/883 |
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LM161 - Comparator, 3000uV Offset-Max, 14ns Response Time, BIPolar, MBCY10 - Dual marked (5962-8757203IA) |
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LM710CH |
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LM710 - Comparator, 1 Func, 5000uV Offset-Max, 40ns Response Time, BIPolar, MBCY8 |
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LM760J/883 |
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LM760 - Comparator, 1 Func, 6000uV Offset-Max, 16ns Response Time, BIPolar, CDIP8 - Dual marked (5962-8754501CA) |
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TPS3803G15DCKR |
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Low Power Voltage Detector 5-SC70 |
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ADC34RF52IRTD |
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Quad-channel, 14-bit, 1.5-GSPS low-noise spectral density (NSD) RF-sampling ADC 64-VQFN -40 to 85 |
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PEAK SPECTRAL RESPONSE 900 NM PHOTO DETECTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PIN Photodiode
Abstract: S3590-19 Si PIN PHOTODIODE S3590-08
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S3590-08/-09/-18/-19 S3590-08/-09 S3590-18/-19 S3590-09/-19 S3590-09 S3590-19 S3590-08 S3590-09 S3590-18 S3590-19 PIN Photodiode Si PIN PHOTODIODE | |
Contextual Info: Si PIN photodiode S3204/S3584 series Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance |
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S3204/S3584 S3204-08 S3204-09 S3584-08 S3584-09 SE-171 KPIN1051E10 | |
near IR photodiodes
Abstract: S8745-01 S8558
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KSPD0001E09 near IR photodiodes S8745-01 S8558 | |
l943Contextual Info: SOLID STATE D I V I S I O N Selection Guide Feb. 2012 LED Wide variations of Light Emitting Diodes to match various applications LIGHT EMITTING DIODES LED HAMAMATSU offers a broad lineup of light emitters such as high-power, near infrared LED. HAMAMATSU LEDs |
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KLED0002E06 l943 | |
C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
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C10988MA C10627 D-82211 DE128228814 C9750 C10990 S11059-78HT S11154-01CT S10604 | |
S2044
Abstract: U13-U11 tl071 datasheet AD538 S1880 TL071 TL071 sensor uv light PHOTO detector analog divider
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S1880, S2044 SE-171 KPSD1015E06 S2044 U13-U11 tl071 datasheet AD538 S1880 TL071 TL071 sensor uv light PHOTO detector analog divider | |
S2044Contextual Info: PSD Two-dimensional PSD S1880, S2044 Non-discrete position sensor utilizing photodiode surface resistance PSD Position Sensitive Detector is an optoelectronic position sensor utilizing photodiode surface resistance. Unlike discrete element detectors such as CCD, PSD provides continuous position data and features high position resolution and high-speed response. |
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S1880, S2044 SE-171 KPSD1015E05 S2044 | |
sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
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VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note | |
BPW 64 photo
Abstract: PHOTOVOLTAIC CELL Fotodiode BPW24 "PHOTOVOLTAIC CELL" BPW 64 photo diode BPW 64 photovoltaic A1183 Din 5033
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5033/IEC BPW 64 photo PHOTOVOLTAIC CELL Fotodiode BPW24 "PHOTOVOLTAIC CELL" BPW 64 photo diode BPW 64 photovoltaic A1183 Din 5033 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g |
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VCNL4020X01 VCNL3020 AEC-Q101 VCNL4010 VCNL4020 VMN-SG2123-1502 | |
Photodiodes
Abstract: yag Electrical circuit S11499 TO-8 Package
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S11499 S11499-01) SE-171 KPIN1082E01 Photodiodes yag Electrical circuit TO-8 Package | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors |
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VCNL4010 VCNL4020 VCNL3020 VMN-SG2123-1404 | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
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VMN-SG2123-1010 TSUS3400 VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01 | |
TRANSISTOR DNH
Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
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30MIN. 15MIN. 17MIN. 14MIN. TRANSISTOR DNH PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector | |
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
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CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E | |
Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has |
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S11499 S11499-01) SE-171 KPIN1082E01 | |
Contextual Info: I R-enhanced Si PI N photodiodes S11499 series Large area, enhanced near I R sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has |
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S11499 SE-171 KPIN1082E01 | |
A New Detector for IR LED Light
Abstract: Silicon Detector OSD5-5T GaAlAs detector IR photodiode 880 nm 850 nm LED RG830 Longwave laser ingaas LED IR photodiode 95w
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DIODE PP602
Abstract: pp602 PP701 pp601 40 PP601 PP1101W PS1101RA PS1101WA PS1102HA PS1191RA
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L9657
Abstract: S10604
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SE-17141 52/1A RU-113054 L9657 S10604 | |
Optical Detector
Abstract: EG*G Heimann Optoelectronics GmbH EG*G Optoelectronics Heimann electron Detector 42 1E-18 CHV30P C1300 transistor c900 C900
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DS-291 Optical Detector EG*G Heimann Optoelectronics GmbH EG*G Optoelectronics Heimann electron Detector 42 1E-18 CHV30P C1300 transistor c900 C900 | |
Contextual Info: Si PIN photodiodes S10783 S10784 High-speed detectors with plastic package The S10783 and S10784 are high-speed APC auto power control detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with φ3 mm lens. |
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S10783 S10784 S10783 S10784 S10783: S10784: S10784phone: | |
Light Detector laser
Abstract: short distance measurement ir infrared diode
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KOTH0001E15 Light Detector laser short distance measurement ir infrared diode | |
S10784Contextual Info: Si PIN photodiodes S10783 S10784 High-speed detectors with plastic package The S10783 and S10784 are high-speed APC auto power control detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with φ3 mm lens. |
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S10783 S10784 S10783 S10784 S10783: S10784: |