PEC 4 DIODE Search Results

BOX53C

Abstract: BOX53 box54 BDX54 BDX53B BDX53 BDX53A BDX53C BDX54A BDX54B
Contextual Info: ŒkMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 BDX53A BDX53B BDX53C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVceo<sus = 4 5 V Min) - BDX53.BDX54

transistor m1 sS 125

Contextual Info: - r - 3 f - S F 6 -1 0 0 R 06 KF EUPEC SEE » 34032^7 D G aaa? G bT Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Maximum rated values 600 U PEC 100 A 150 - 4 0 /+ 150 - 4 0 / + 125 tvjo p ts tg Icrm tp = 1ms 200 A P,ot

fx20smj3

Abstract: 4470 mosfet
Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

FX50SMJ-03

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX50SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

fx6smj2

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0

fx30smj03

Abstract: FX30SM
Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

fx3smj3

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX3SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX3SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0

fx30smj2

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

fx20smj2

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

fx6smj06

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

fx30smj06

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

FX50SMJ-2

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX50SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

FX70SMJ-03

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX70SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX70SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

FX30SMJ-3

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

fx6smj3

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0

FX50SMJ-06

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX50SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

fx20smj-06

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4

M34282E2GP

Abstract: R2h DIODE M34282M1 M34282M1-XXXGP M34282M2-XXXGP
Contextual Info: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer

r2l diode

Abstract: R2h DIODE M34282Mx-XXXGP
Contextual Info: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer

18P4G

Abstract: 20P2N-A M63815FP M63815KP M63815P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays

GP 015 DIODE

Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN

Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays

18P4G

Abstract: 20P2N-A M63817FP M63817KP M63817P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays