BOX54 Search Results

BOX53C

Abstract: Bow94c box33c BOW94CH B0X54C BDXS38 BOX54B B0X54 BU508 225/B0X54C
Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE V cbo V ceo N PN PNP BD909 BD910 BD911 BD912 BDW51C BDW52C BDW83C BDWB4C BDW93B BDW93C BDW93CP1 BÎHS941B BOW94C BOW94CH e m m BOX33C BDX34B BDX34C BDX53A BDXS38 BD^33BFI BOX53C BDX53F BOX54BFI B0X54C BDX54F BDX67C

bdx548

Abstract: B0X54
Contextual Info: BDX54, BOX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS Copyright O 1997, Power Innovations Limited, UK_ MAY 1989 - R E V IS E O M A R C H 1997 • Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C • 60 W at 25°C Case Temperature

BOX34B

Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A

AO-A15

Abstract: 8l35 MCM72F6 MCM72F7
Contextual Info: MOTOROLA SEMICONDUCTOR Order TECHNICAL DATA this document by MCM72F6/D — – Advance Information 512KB and 1MB Synchronous Fast Static RAM Module MCM72F6 MCM72F7 The MCM72F6 512KB is configured as 64K x 72 bits and the MCM72F7 (1 MB) is configured as 128K x 72 bits, Both are packaged in a 168 pin dual–in–line memory

AN569

Abstract: MMDF6N03HD MMDF6N03HDR2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order thisdocument by MMDF6N03HD/D DATA E Advance /formation Medium Power Surface Mount Products TMOS Dual N-ChanneI FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s

MCM72F6A

Abstract: MCM72F7A max2781 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MCM72F6ND DATA 512KB and 1MB Synchronous Fast Static RAM Module The MCM72F6A 512KB is configured as 64K x 72 bits and the MCM72F7A (1 MB) is configured as 128K x 72 bits. Both are packaged in a 168-pin dualin–line memory module DIMM. Each module uses Motorola’s 3.3 V 64K x 18 bit

80244C

Abstract: RCA1C11 2S8754 mj04 2S8999 BOT42C 2S8553
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 55 60 65 70 75 80 85 90 95 Max 15 15 15 15 15 15 15 20 25 25 75 75 75 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 100 100 100 120 120 120 120 120 120 40 55 120 15 15 20 20 40 40 200 160 240 6.0 6.0 6.0 6.0 6.0 6.0

bot64

Abstract: B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (.) t, Max TOper (.) (Oe) Max Package Style PNP Darlington Transistors, (Co nt' d) 5 10 MJE1091 MJE1091 MJE1091 MJE2090 MJE2091

box54c

Abstract: BOX34C b0336 BOW84C B0650 2SB1100K 2SB1098L BOW24C 2SB1099 2SB897
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (s) (s) TOper Max (Oe) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 B0262B B0262B B0682 2SB1098M 2SB1098L

MC74VHC32

Abstract: a488 DL203 MC74VHCXXD MC74VHCXXDT MC74VHCXXM VQC 10 D Y3
Contextual Info: L M OTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input OR G ate M C74VH C32 The MC74VHC32 is an advanced high speed CMOS 2-input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

2N6059 MOTOROLA

Abstract: 2N6058 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current Gain —

bdx538

Abstract: BOX53C transistor box54c box54c Transistors BDX538 box53b box54 B0X53C BOX53 BOX53A
Contextual Info: MO TO RO LA SC 12E D I b3b?BS4 0004703 1 I X S T RS/R F • " NPN B0X53 BDX53A BDX53B BDX53C MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEM ENTARY SILICON TRANSISTORS DA RLIN G TO N 8 AMPERE .d e s ig n e d fo r general-purpose a m p lifie r and low-speed sw itc h in g

B507D

Abstract: BD95280 A940 A614-Y a968 B507E A968B A614 CSA6140 bs340
Contextual Info: Electrical Characteristics Ta*25‘C, Unless OthenrfM SpadfM Maximum Ritingi Type No. P» (W) (V) Mm flTc=25‘c VcE (V) t (A) c* <pn Max f, (MHz) Typ Min vcao (V) Min V C£0 2N6107 80 70 5 40 7 * 100 75 30 150 2.3 2 7 4 4 3.5 1 7 2 250 10 500 2N6109 60

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hex Inverter MC74VHCU04 Unbuffered The MC74VHCU04 is an advanced high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.