PEM 93 Search Results

mhx2

Contextual Info: PEM Series CHASSIS MOUNT, MULTI-STAGE EMI/RFI LINE FILTER MECHANICAL DIMENSIONS Unit: mm A L L' 2x N 4.8 N' E D FEATURES The PEM series offers wide variety of high performance EMI filters in numerous packages. This series offers a variety of circuit types with multiple stages of filtration over a

Contextual Info: PEM Series C H A S S IS M O U N T , MULTI-STAGE EMI/RFI LINE FILTER MECHANICAL D IM E N S IO N S Unit: mm TO @ ^ C€ FEATURES The PEM series offers wide variety of high performance EMI filters in numerous packages. This series offers a variety of circuit types with multiple stages of filtration over a

foto resistor

Abstract: parallel scrambler 24 bit lfsr foto sensor AS7B923 AS7B923PEC-160XT circuit diagram of rf transmitter and receiver foto transistor CY7B923 PLCC-28 fifo asi cypress
Contextual Info: PEM AS7B923/933PEC HOTLinku u Devices General Description Plastic Encapsulated Microcircuit HOTLink u Transmitter/Receiver ASI’s, AS7B923PEC and AS7B933PEC HOTLinku Transmitter, Receiver pair are up-screened Plastic Encapsulated Serial PHY devices providing point-to-point communication building blocks

MS-026D

Abstract: as5sp128k32dq
Contextual Info: COTSPEM PEM COTS AS5SP128K36DQ AS5SP128K36DQ SSRAM SSRAM SSRAM AustinSemiconductor, Semiconductor,Inc. Inc. Austin Parameter Symbol Cycle Time tCYC Cycle Time tCYC Cycle Time tCYC Clock Access Time tCD Clock Access Time tCD Clock Access Time tCD Output Enable

Contextual Info: Radial Leaded Capacitors Metallized Polypropylene Dielectric - MKP Preformed Case with Epoxy Endfill Insulation Resistance MegOhms x MicroFarads a 30,000 100,000 100 VDC Need Not Exceed MegOhms Test Voltage Measured after 1 minute of electrification. Capacitor pem (mm)

MSK4854

Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 600V/200A THREE PHASE BRIDGE PEM WITH BRAKE 4854 FEATURES: Replaces MSK4851 with Lower Conduction Loss Full Three Phase Bridge Configuration with SCR/IGBT Brake 600V Rated Voltage 200A Continuous Output Current

Contextual Info: COTS PEM SDRAM AS4DDR32M16 8 Meg x 16 x 4 Banks PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,

Contextual Info: COTS PEM SDRAM AS4DDR32M16 8 Meg x 16 x 4 Banks PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,

AS5SP128K32DQ

Abstract: CMOS linear array
Contextual Info: COTS PEM AS5SP128K32DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Fast Access Times Parameter Cycle Time Clock Access Time

Contextual Info: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0

transistor w2d

Abstract: transistor w2a 1050C 850C
Contextual Info: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array

transistor w2d

Abstract: AS5SP128K36DQ
Contextual Info: COTS PEM AS5SP128K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array

Contextual Info: CO TS PEM COTS SSRAM AS5SP256K36DQ Austin Semiconductor, Inc. 81 84 82 83 87 85 86 89 88 91 92 90 95 93 96 94 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\

Contextual Info: ADVANCE INFORMATION COTS PEM SDRAM AS4DDR32M16 8 Meg x 16 x 4 Banks PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,

NASM45938

Abstract: NASM25027 MIL-S-8879 MIL-PRF-46010 PennEngineering LUBRICANT NASM25027 NATIONAL AEROSPACE STANDARDS MIL-S-8879 A M5 self-locking nut 5052-H34
Contextual Info: M I N I AT U R E S ELF-CLINCHING F ASTENERS MINIATURE SELFCLINCHING FASTENERS PEM brand miniature fasteners fit into a minimal space and provide strong, reusable threads. Types FE, FEO and UL are self-locking. Types FE and FEO meet locking torque requirements of NASM25027

w2d 98

Contextual Info: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit

32M16

Abstract: AS4DDR32M16 DDR250 DDR266B DDR333
Contextual Info: CO TS PEM COTS SDRAM Austin Semiconductor, Inc. 8 Meg x 16 x 4 Banks AS4DDR32M16 PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,

Contextual Info: COTS PEM SSRAM AS5SP256K36 BLOCK DIAGRAM OE\ ZZ CLK CE1\ CE2 I/O Gating and Control CE3\ BWE\ BWx\ CONTROL BLOCK GW\ ADV\ ADSC\ ADSP\ MODE A0-Ax AS5SP256K36 Rev. 2.1 09/11 BURST CNTL. Address Registers Row Decode Memory Array x36 SBP ❑ Synchronous Pipeline

Contextual Info: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit

transistor w2d

Abstract: ADV748
Contextual Info: COTS PEM AS5SP1M18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address

PEM SOS-632-8

Abstract: SOS-440-10 7075-T6 aluminum sos-6440-4 SOS-832-16 SOS-632-12 SOS-440-12 BSOS-440-10 SO-440-6 SOS-440-8
Contextual Info: S ELF-CLINCHING S TA N D O F F S SELF-CLINCHING STANDOFFS These standoffs, which use the proven self-clinching design, install with a squeeze in punched or drilled round holes – and become permanently mounted in the thin sheet. PEM brand standoffs are installed with their heads flush with one surface

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT ] RELEASED FOR PUBLICATION BY AMP INCORPORATED, 19 Z Hoc . 19 DR RIGHTS RESERVED. 1 DBT REVISIONS 01 P DESCRIPTION LTR G DWN DATE EC 0 D 3 0 -0 0 8 0 -9 8 APVD PEM M -A P R -96 SPECIFICATIONS AT 100 mA FORWARD CURRENT, 25*C

AS5SP256K36DQ

Abstract: transistor w2d 850C
Contextual Info: CO TS PEM COTS SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc.

SSRAM

Abstract: AS5SP256K36
Contextual Info: COTS PEM SSRAM AS5SP256K36 • 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 99 100 80 2 79 3 78 4 77 5 76 DQc DQc 6 75 7 74 DQc DQc 8 73 9 72 VSSQ VDDQ 10 71 11 70 DQc 12 69 DQc NC VDD 13 68 NC VSS DQd 16 65 17 64 18 63 DQd 19 62 VDDQ VSSQ 20 61 21