7273B

Contextual Info: SSRAM AS5SS256K18 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP SA SA CE\ CE2 NC NC bwB\ BWa\ CE2\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ SA SA FEATURES VDD NC VSS DQb DQb VDDQ VSS DQb DQb DQPb NC VSS VDDQ NC

Contextual Info: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ, DQC & DQCR) FEATURES              DQPc DQc DQc VDDQ Vss DQc DQc DQc DQc Vss VDDQ DQc DQc Vss VDD NC Vss

AS5SP512K36DQ

Contextual Info: SSRAM A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A AS5SP512K36DQ Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns 81 84 82 83 85 87 86 89 88

Contextual Info: Standard Products UTCAM-EngineTM Dynamically Configurable Content Addressable Memory Engine Preliminary Datasheet Nov. 1998 FEATURES External Memory q Addresses up to 8 mega words of SSRAM Performance and Flexibility q Rapid association matching for exact match seeks

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with

Contextual Info: WED3C7410E16MC-XBHX 7410E RISC Microprocessor HiTCE Multichip Package OVERVIEW FEATURES The WEDC 7410E/SSRAM multichip package is targeted for high performance, space sensitive, low power systems and supports the following power management features: doze, nap, sleep and

Contextual Info: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0

MPC755

Abstract: WED3C750A8M-200BX WED3C7558M-XBX WED3C755E8M-XBX
Contextual Info: White Electronic Designs WED3C755E8M-XBX RISC MICROPROCESSOR MULTI-CHIP PACKAGE OVERVIEW FEATURES The WEDC 755E/SSRAM multichip package is targeted for high performance, space sensitive, low power systems and supports the following power management features:

Contextual Info: tm TE CH Preliminary T71L6816A Sixteen-port 10/100 Switch The T71L6816A is a sixteen-port 10/100Mbps dual speed ethernet switch integrated with a built-in 2K entries of addr ess table and supports a 4Mb external SSRAM. T71L6816A is

MS-026D

Abstract: as5sp128k32dq
Contextual Info: COTSPEM PEM COTS AS5SP128K36DQ AS5SP128K36DQ SSRAM SSRAM SSRAM AustinSemiconductor, Semiconductor,Inc. Inc. Austin Parameter Symbol Cycle Time tCYC Cycle Time tCYC Cycle Time tCYC Clock Access Time tCD Clock Access Time tCD Clock Access Time tCD Output Enable

Contextual Info: 256K x 72 SSRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPY256K72V-XBX* • Designed as L2 Cache for advanced processors see other side for typical application block diagram Performance Features AR Y Fast clock speeds: 200, 166, 150, 133 and 100MHz

Contextual Info: 256K x 72 SSRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPY256K72V-XBX* • Designed as L2 Cache for advanced processors see other side for typical application block diagram Fast clock speeds: 200, 166, 150, 133 and 100MHz High performance 2-1-1-1 access rate

Contextual Info: 512K x 72 ZBL SSRAM Multi-Chip Package Optimum Density and Performance in One Package W2Z512K72SJxxBC/BI • Designed as main memory for advanced processors see page 2 for typical application block diagram Performance Features Benefits • Pipeline Zero Bus Latency SSRAM for 100 percent

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with

SSRAM

Abstract: AS5SP128K32
Contextual Info: SSRAM 81 84 82 83 85 87 86 89 88 91 90 92 93 95 96 94 97 100 1 80 DQc DQc VDDQ VSSQ 2 79 3 78 4 77 5 76 DQc DQc 6 75 7 74 DQc DQc 8 73 9 72 VSSQ VDDQ 10 71 11 70 DQc 12 69 DQc NC 13 68 VDD 15 NC VSS DQd 16 65 17 64 18 63 DQd 19 62 VDDQ VSSQ 20 61 21 60 VSSQ

gck12

Contextual Info: WED9LAPC2C16V4BC White Electronic Designs 512K x 32 SSRAM / 512K x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES  DESCRIPTION The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous

Contextual Info: White Electronic Designs WED3C755E8M-XBHX 755E RISC MICROPROCESSOR HiTCE MULTI-CHIP PACKAGE OVERVIEW FEATURES The WEDC 755E/SSRAM multichip package is targeted for high performance, space sensitive, low power systems and supports the following power management features:

WEDPY256K72V-XBX

Contextual Info: 256K x 72 SSRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPY256K72V-XBX* Designed as L2 Cache for advanced processors see other side for typical application block diagram Performance Features • Fast clock speeds: 200, 166, 150, 133 and 100MHz

SN46

Abstract: PB46 JESD22 A104 A108 A113 WED3C750A8M-200BX
Contextual Info: White Electronic Designs WED3C750A8M-200-BX WED3C7558M-300-BX POWER PC™ MULTI-CHIP PACKAGE CONSTRUCTION HIGH RELIABILITY FLIP CHIP ATTACH TEST • C4 Assembly on PowerPCÔ Processors & SSRAM die ■ Burn-In - 100%, 48 hours at 125°C ■ Final Electrical Test - 100% at maximum and

7410

Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

MX98207

Contextual Info: PRELIMINARY MX98207 12-Port Dual-Speed Ethernet Switch Controller FEATURES • Support IEEE802.3x compliant flow control for FDX and back-pressure flow control for HDX. • Support up to 2MB SSRAM pipeline type, or flow through type as data buffer. • Serial EEPROM interface for auto-configuration.

100Mbps-FDX

Abstract: diode bp64 MX98207AC T56 marking Macronix marking 100M-FDX marking t54 bp64 292LBGAPACKAGE marking macronix
Contextual Info: PRELIMINARY MX98207AC 12-Port Dual-Speed Ethernet Switch Controller FEATURES • Support IEEE802.3x compliant flow control for FDX and back-pressure flow control for HDX. • Support up to 2MB SSRAM pipeline type, or flow through type as data buffer. • Serial EEPROM interface for auto-configuration.

WED9LAPC2C16V8BC

Abstract: WED9LAPC2C16V8BI
Contextual Info: WED9LAPC2C16V8BC 512K x 32 SSR AM / 1M x 64 SDR AM SSRAM SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT ’S LUCT APC640 A TM PORT CONTROLLER LUCENT’S LUCTAPC640 ATM FEATURES DESCRIPTION n Clock speeds: The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous DRAM

transistor w2d

Abstract: transistor w2a 1050C 850C
Contextual Info: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array