PEPI CR Search Results

pepi c

Abstract: DM100 pepi pepi N HV100 HV300 ISO14000 DM-300 pepi b PEPI N-1
Contextual Info: 2.0 µm 5V/100V/300V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 2 Micron 5V control logic 100V & 300 V N & P channels transistors Low On-Resistance Epi wafers Thin gate oxide State of the art double metal technology [Ti/TiN/Al/TiN

pepi c

Abstract: pepi cr bimetallic thermostat PEPI bimetal PEPI -CH pepi thermostat bimetal thermostat seamless view thermostat pepi
Contextual Info: A creep action thermostat/ thermal protector with conductive bimetal construction. Low internal resistance and available with gold diffused contacts for use in low voltage/low current applications. Models C and CR FEATURES • Conductive bimetal construction; the

Contextual Info: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­

0.18 um CMOS parameters

Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Contextual Info: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors

130001 power transistor

Abstract: transistor 130001 K1746 pepi c MRF426A MRF426 VK20Q PEPI -CH 2204B 725M
Contextual Info: lt.3t.7HS4 007&clû3 1 89D 7 8 9 8 3 6 3 6 7 2 5 4 MOTOROLA SC <X STR S/R F D 3 7 - A * MOTOROLA SEMICONDUCTOR MRF426 MRF426A TECHNICAL DATA T h e R F L in e 25 W P E P )- 3 0 M H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed for high gain driver and output linear am plifier stages

IDLN100D10

Abstract: ISO14000 100D10 pepi c ISO-14000 VTN100D10 zarlink PACKING 50x-2 Zarlink CROSS analog devices 0.8 -2.0um CMOS
Contextual Info: 2.0 µm 5V/40V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 5V control logic 40V transistors Epi wafers Thick gate oxide State of the art double metal technology [Ti/TiN/Al/TiN sandwich] Single or double poly Hi-res poly option [10kΩ/ ]

PEPI N-1

Abstract: pepi c 0-21S SAFE33 VK20Q PEPI PEPI N
Contextual Info: ai ^ fcb 3b 72S 4 0070=103 1 89D 78983 6 3 6 7 2 5 4 MOTOROLA SC <XSTRS/R F D 3 7 - A* MOTOROLA SEM ICO NDUCTOR MRF426 MRF426A TECHNICAL DATA The RF Line 25 W P E P )- 3 0 M H z R F POW ER T R A N S IS T O R N PN S IL IC O N N P N S IL IC O N R F POW ER T R A N S IS T O R

TD 6905 S

Abstract: ci 7430 TD 6905
Contextual Info: LDVER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATID P L -P 4 -P 2 i C J1-J2) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 3 ) (PE-PI) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 <V1TH J 6 AND J 3 SHDRT) P2-P1 (WITH JE AND J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P 6 ,P 7 ,P 3 ) TD (J 6 ,J 3 >

Ta75458p cross

Abstract: ta7545bp C12S TA75458F TA75458P
Contextual Info: BIPO LAR LIN EA R INTEGRATED CIRCUIT SILICON MONOLITHIC TA75458P/F DUAL OPERATIONAL AMPLIFIER . Pair of Internally Compensated High Performance Amplifier . No Frequency Compensation Required . No Latch-up Short Circuit Protection . Wide Common Mode and Differential Voltage Range

5HP ibm

Abstract: 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe
Contextual Info: IBM Microelectronics Blue Logic BiCMOS 5HP Technology SiGe BiCMOS process for high performance Highlights IBM Blue Logic BiCMOS 5HP is a unique and versatile process integrating a highperformance silicon germanium SiGe heterojunction bipolar transistor (HBT)

MC 2882

Abstract: 2SC2862 MC 342 transistor 210B MC 2871
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

MRF429MP

Abstract: MRF429-MP MRF429 MRF-429
Contextual Info: MOTOROLA SEM IC O N D U C T O R MRF429 MRF429MP TECHNICAL DATA The RF Line 150 W LINEAR 30 MHz RF POWER TRANSISTORS N P N SILIC O N NPN SILICON RF POWER TRANSISTORS . . d e s ig n e d p r im a rily fo r h ig h -v o lt a g e a p p lic a t io n s a s a h ig h p o w e r lin e a r a m p lifie r fro m 2.0 to 3 0 M H z . Id e a l fo r m a r in e a n d

transistor KD 503

Abstract: kd 503 transistor MRF466 2N5941 MRF-466
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF466 T h e R F Line 4 0 W P E P NPN SILICON RF POWER TRANSISTOR RF PO W E R T R A N S IS T O R . designed p rim a rily for applications as a hig h -p ow e r a m p lifie r from 2.0 to 30 MHz, in single sideband m obile, m arine and base

c237p

Abstract: GPe600 equivalent of SL 100 NPN Transistor 2wl1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 600 W ATTS LINEAR 30 M Hz RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r h ig h -vo lta g e a p p lica tio n s as a h ig h -p o w e r lin e a r a m p lifie r

harris 6616

Contextual Info: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2

harris 6616

Contextual Info: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02

AAF40

Abstract: atechnology
Contextual Info: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through

883ct

Contextual Info: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through

honeywell mram

Contextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out

harris 6616

Contextual Info: Honeywell HC6616 Military Products Preliminary 2K x 8 RADIATION-HARDENED ROM FEATURES O TH ER R AD IATIO N • Typical 55 ns A ccess Tim e • Fabricated w ith RICMOS Epitaxial 1.2 |im Process • Low O perating Pow er • S ynchronous O peration • Total Dose H ardness through

smd TRANSISTOR code marking 8K

Abstract: pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N
Contextual Info: Honeywell HC6664 8K X 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 M_m Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x106 rad Si02 • Access Time of 25 ns (typical)

USE OF TRANSISTOR

Abstract: pepi c thermal transistor and or IC Ultrasonic pepi testing good or bad electronic components circuit TO-220FN pn junction diode structure shin-etsu Chemical
Contextual Info: Operation notes Transistors Operation notes zSelecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum

Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

pepi c

Abstract: 2SC4938 2SD1664 2SD1760 G746 SC101 mosfet nepi
Contextual Info: Operation notes Transistors Operation notes !Selecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum